All Stories

  1. Simulation of overalapped back contact silicon heterojunction solar cells

    Article • Japanese Journal of Applied Physics, July 2015, Japan Society of Applied Physics

    Professor Hiroshi Noge

  2. Rapid Epitaxial Growth of Si and SiGe Mono-Crystalline Films on Silicon-on-Glass Substrates by Reactive CVD Using SiH4, GeH4, and F2

    Article • MRS Proceedings, January 2012, Cambridge University Press

    Professor Hiroshi Noge

  3. Vacuum Wafer Level Packaged Two-Dimensional Optical Scanner by Anodic Bonding

    Article • January 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Hiroshi Noge

  4. Electrostatically Actuated Two-Dimensional Optical Scanner Having a High Resonant Frequency Ratio of Fast/Slow Axes

    Article • IEICE Transactions on Electronics, October 2008, Institute of Electronics, Information and Communications Engineers (IEICE)

    Professor Hiroshi Noge

  5. Ultraclean etching of GaAs by HCl gas and in situ overgrowth of (Al)GaAs by molecular beam epitaxy

    Article • Journal of Applied Physics, January 1998, American Institute of Physics

    Professor Hiroshi Noge

  6. Ultrahigh vacuum atomic force microscope study of 10–30 nm scale GaAs ridge structure formation by molecular beam epitaxy

    Article • Applied Physics Letters, February 1997, American Institute of Physics

    Professor Hiroshi Noge

  7. Effect of oxygen incorporation at AlGaAs/GaAs interfaces on the electrical properties of two-dimensional electron gas

    Article • Applied Physics Letters, February 1997, American Institute of Physics

    Professor Hiroshi Noge

  8. Surface Smoothness and Step Bunching on GaAs (111)B Facets Formed by Molecular Beam Epitaxy

    Article • Japanese Journal of Applied Physics, July 1996, Japan Society of Applied Physics

    Professor Hiroshi Noge

  9. Transport properties of two‐dimensional electron gas in AlGaAs/GaAs selectively doped heterojunctions with embedded InAs quantum dots

    Article • Applied Physics Letters, December 1995, American Institute of Physics

    Professor Hiroshi Noge

  10. Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask

    Article • Japanese Journal of Applied Physics, September 1995, Japan Society of Applied Physics

    Professor Hiroshi Noge

  11. Self-formation of 100 nm scale wire structures during molecular beam epitaxial growth of AlGaAs on patterned substrates

    Article • Journal of Crystal Growth, May 1995, Elsevier

    Professor Hiroshi Noge

  12. Control of ridge shape for the formation of nanometer-scale GaAs ridge quantum wires by molecular beam epitaxy

    Article • Journal of Crystal Growth, May 1995, Elsevier

    Professor Hiroshi Noge

  13. Selective Epitaxy for Ridge and Edge Quantum Wire Structures: Morphology and Purity Issues

    Article • January 1995, Springer Science + Business Media

    Professor Hiroshi Noge

  14. Surface diffusion processes in molecular beam epitaxial growth of GaAs and AlAs as studied on GaAs (001)‐(111)Bfacet structures

    Article • Journal of Applied Physics, October 1994, American Institute of Physics

    Professor Hiroshi Noge

  15. Effect of Ionized Impurities at Heterointerface on Concentration and Mobility of Two-Dimensional Electrons in Selectively Doped Heterojunction Structures

    Article • Japanese Journal of Applied Physics, September 1994, Japan Society of Applied Physics

    Professor Hiroshi Noge

  16. Modulation of one‐dimensional electron density inn‐AlGaAs/GaAs edge quantum wire transistor

    Article • Applied Physics Letters, May 1994, American Institute of Physics

    Professor Hiroshi Noge

  17. Single electron transport and current quantization in a novel quantum dot structure

    Article • Applied Physics Letters, May 1994, American Institute of Physics

    Professor Hiroshi Noge

  18. Formation of N-AlGaAs/GaAs edge quantum wire on (111)B micro facet by MBE and magnetic depopulation of quasi-one-dimensional electron gas

    Article • Solid-State Electronics, April 1994, Elsevier

    Professor Hiroshi Noge

  19. MBE growth of GaAs nanometer-scale ridge quantum wire structures and their structural and optical characterizations

    Article • Solid-State Electronics, April 1994, Elsevier

    Professor Hiroshi Noge

  20. Thermalization Effect on Radiative Decay of Excitons in Quantum Wires

    Article • Physical Review Letters, March 1994, American Physical Society (APS)

    Professor Hiroshi Noge

  21. Electroluminescence from thin film of a semiconducting oligothiophene deposited in ultrahigh vacuum

    Article • Synthetic Metals, March 1994, Elsevier

    Professor Hiroshi Noge

  22. Thermalization effect on radiative decay of excitons in quantum wires

    Article • Physical Review Letters, February 1994, American Physical Society (APS)

    Professor Hiroshi Noge

  23. Formation of GaAs ridge quantum wire structures by molecular beam epitaxy on patterned substrates

    Article • Applied Physics Letters, January 1994, American Institute of Physics

    Professor Hiroshi Noge

  24. Nanostructures and Quantum Effects

    Article • January 1994

    Professor Hiroshi Noge

  25. Oxygen incorporation in GaAs/AlGaAs interfaces grown by molecular beam epitaxy

    Article • January 1994, Elsevier

    Professor Hiroshi Noge

  26. Ultrahigh-Vacuum In-Situ Patterning and MBE Overgrowth of GaAs and AlGaAs Using an InAs Mask Laser

    Article • January 1994, Springer Science + Business Media

    Professor Hiroshi Noge

  27. MBE Growth of Quantum-Wire Structures on Top of Sharp Riges Using a Mesa-Patterned Substrate

    Article • January 1994, Springer Science + Business Media

    Professor Hiroshi Noge

  28. Fabrication of N-AlGaAs/GaAs Edge Quantum Wires on (118)B Facets with Gate-Electrode and Density Modulation of One-Dimensional Electrons

    Article • January 1994, Springer Science + Business Media

    Professor Hiroshi Noge

  29. Structure of pentacene/tetracene superlattices deposited on glass substrate

    Article • Applied Physics Letters, December 1993, American Institute of Physics

    Professor Hiroshi Noge

  30. Etching of InAs in HCl Gas and Selective Removal of InAs Layer on GaAs in Ultrahigh-Vacuum Processing System

    Article • Japanese Journal of Applied Physics, October 1993, Japan Society of Applied Physics

    Professor Hiroshi Noge

  31. Detection of oxygen incorporated in molecular‐beam epitaxy grown GaAs‐on‐AlAs interfaces and AlAs layers by secondary ion mass spectrometry

    Article • Applied Physics Letters, October 1993, American Institute of Physics

    Professor Hiroshi Noge

  32. Electron beam‐enhanced etching of InAs in Cl2gas and novelinsitupatterning of GaAs with an InAs mask layer

    Article • Applied Physics Letters, September 1993, American Institute of Physics

    Professor Hiroshi Noge

  33. Formation of Two-Dimensional Electron Gas in N-AlGaAs/GaAs Heterojunctions on (111)B Microfacets Grown by Molecular Beam Epitaxy on a Patterned (001) Substrate

    Article • Japanese Journal of Applied Physics, March 1993, Japan Society of Applied Physics

    Professor Hiroshi Noge

  34. Formation of high mobility two-dimensional electron gas at etch-regrown AlGaAs/GaAs interface prepared by chlorine gas etching and MBE in an UHV multichamber system

    Article • Journal of Crystal Growth, February 1993, Elsevier

    Professor Hiroshi Noge

  35. Light-Emitting Diodes Using Semiconducting Oligothiophenes

    Article • MRS Proceedings, January 1993, Cambridge University Press

    Professor Hiroshi Noge

  36. Molecular‐beam‐epitaxial growth ofn‐AlGaAs on clean Cl2‐gas etched GaAs surfaces and the formation of high mobility two‐dimensional electron gas at the etch‐regrown interfaces

    Article • Applied Physics Letters, October 1992, American Institute of Physics

    Professor Hiroshi Noge

  37. On the possibilities and problems of semiconductor quantum microstructures

    Article • Nanotechnology, October 1992, Institute of Physics Publishing

    Professor Hiroshi Noge

  38. A comparison of deep levels in rapidly thermal-processed GaAs films grown by molecular beam epitaxy on Si and GaAs substrates

    Article • Semiconductor Science and Technology, May 1989, Institute of Physics Publishing

    Professor Hiroshi Noge

  39. Effects of Rapid Thermal Processing on Mbe GaAs on Si

    Article • MRS Proceedings, January 1989, Cambridge University Press

    Professor Hiroshi Noge

  40. Antiphase domains in GaAs grown on a (001)‐oriented Si substrate by molecular‐beam epitaxy

    Article • Journal of Applied Physics, August 1988, American Institute of Physics

    Professor Hiroshi Noge

  41. MBE Growth of GaAs on an Exactly (001)-Oriented Si Substrate and Selective Epitaxial Growth for Fabrication of Modulation-Doped Fet's

    Article • MRS Proceedings, January 1988, Cambridge University Press

    Professor Hiroshi Noge

  42. MBE Growth of GaAs on an Exactly (001)-Oriented Si Substrate and Selective Epitaxial Growth for Fabrication of Modulation-Doped Fet's

    Article • MRS Proceedings, January 1988, Cambridge University Press

    Professor Hiroshi Noge

  43. Molecular beam epitaxial growth of a GaAs layer free from antiphase domains on an exactly (100)-oriented Si substrate preheated at 1000°C

    Article • Journal of Crystal Growth, June 1987, Elsevier

    Professor Hiroshi Noge