Transport properties of two‐dimensional electron gas in AlGaAs/GaAs selectively doped heterojunctions with embedded InAs quantum dots

  • H. Sakaki, G. Yusa, T. Someya, Y. Ohno, T. Noda, H. Akiyama, Y. Kadoya, H. Noge
  • Applied Physics Letters, December 1995, American Institute of Physics
  • DOI: 10.1063/1.115274

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The following have contributed to this page: Professor Hiroshi Noge