Detection of oxygen incorporated in molecular‐beam epitaxy grown GaAs‐on‐AlAs interfaces and AlAs layers by secondary ion mass spectrometry

  • T. Someya, H. Akiyama, Y. Kadoya, T. Noda, T. Matsusue, H. Noge, H. Sakaki
  • Applied Physics Letters, October 1993, American Institute of Physics
  • DOI: 10.1063/1.110650

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http://dx.doi.org/10.1063/1.110650

The following have contributed to this page: Professor Hiroshi Noge