A comparison of deep levels in rapidly thermal-processed GaAs films grown by molecular beam epitaxy on Si and GaAs substrates

A Ito, A Kitagawa, Y Tokuda, A Usami, H Kano, H Noge, T Wada
  • Semiconductor Science and Technology, May 1989, Institute of Physics Publishing
  • DOI: 10.1088/0268-1242/4/5/015

The authors haven't finished explaining this publication. If you are the author, sign in to claim or explain your work.

Read Publication

http://dx.doi.org/10.1088/0268-1242/4/5/015

The following have contributed to this page: Professor Hiroshi Noge