Formation of high mobility two-dimensional electron gas at etch-regrown AlGaAs/GaAs interface prepared by chlorine gas etching and MBE in an UHV multichamber system

  • Y. Kadoya, H. Noge, H. Kano, H. Sakaki
  • Journal of Crystal Growth, February 1993, Elsevier
  • DOI: 10.1016/0022-0248(93)90751-h

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The following have contributed to this page: Professor Hiroshi Noge