Two-dimensional simulation of interdigitated back contact silicon heterojunction solar cells having overlapped p/i and n/i a-Si:H layers

Hiroshi Noge, Kimihiko Saito, Aiko Sato, Tetsuya Kaneko, Michio Kondo
  • Japanese Journal of Applied Physics, July 2015, Japan Society of Applied Physics
  • DOI: 10.7567/jjap.54.08kd17

Simulation of overalapped back contact silicon heterojunction solar cells

What is it about?

The performance of interdigitated back contact silicon heterojunction solar cells having overlapped p/i and n/i a-Si:H layers on the back has been investigated by two-dimensional simulation in comparison with the conventional cell structure having a gap between p/i and n/i layers. The results show that narrower overlap width leads to higher short circuit current and conversion efficiency, especially for poor heterojunction interface and thinner silicon substrate of the cells in addition to narrower uncovered width of p/i layer by a metal electrode. This is similar to the gap width dependence in the conventional cells, since both overlap and gap act as dead area for diffused excess carriers in the back contacts.

Why is it important?

It bis helpful to design interdigitated back contact silicon heterojunction solar cells with the simple fabricaion process.

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http://dx.doi.org/10.7567/jjap.54.08kd17

The following have contributed to this page: Professor Hiroshi Noge