MBE Growth of GaAs on an Exactly (001)-Oriented Si Substrate and Selective Epitaxial Growth for Fabrication of Modulation-Doped Fet's

  • H. Noge, H. Kano, M. Hashimoto, I. Igarashi
  • MRS Proceedings, January 1988, Cambridge University Press
  • DOI: 10.1557/proc-116-199

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The following have contributed to this page: Professor Hiroshi Noge