Ultraclean etching of GaAs by HCl gas and in situ overgrowth of (Al)GaAs by molecular beam epitaxy

Y. Kadoya, T. Yoshida, H. Noge, H. Sakaki
  • Journal of Applied Physics, January 1998, American Institute of Physics
  • DOI: 10.1063/1.366651

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http://dx.doi.org/10.1063/1.366651

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