Surface diffusion processes in molecular beam epitaxial growth of GaAs and AlAs as studied on GaAs (001)‐(111)Bfacet structures

  • S. Koshiba, Y. Nakamura, M. Tsuchiya, H. Noge, H. Kano, Y. Nagamune, T. Noda, H. Sakaki
  • Journal of Applied Physics, October 1994, American Institute of Physics
  • DOI: 10.1063/1.357364

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http://dx.doi.org/10.1063/1.357364

The following have contributed to this page: Professor Hiroshi Noge