Molecular‐beam‐epitaxial growth ofn‐AlGaAs on clean Cl2‐gas etched GaAs surfaces and the formation of high mobility two‐dimensional electron gas at the etch‐regrown interfaces

  • Y. Kadoya, H. Noge, H. Kano, H. Sakaki, N. Ikoma, N. Nishiyama
  • Applied Physics Letters, October 1992, American Institute of Physics
  • DOI: 10.1063/1.108496

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The following have contributed to this page: Professor Hiroshi Noge