Molecular-beam-epitaxial growth of n-AlGaAs on clean Cl2-gas etched GaAs surfaces and the formation of high mobility two-dimensional electron gas at the etch-regrown interfaces

Y. Kadoya, H. Noge, H. Kano, H. Sakaki, N. Ikoma, N. Nishiyama
  • Frontiers in Human Neuroscience, January 1992, American Institute of Physics
  • DOI: 10.1063/1.108496

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http://dx.doi.org/10.1063/1.108496

The following have contributed to this page: Professor Hiroshi Noge

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