Antiphase domains in GaAs grown on a (001)-oriented Si substrate by molecular-beam epitaxy

H. Noge, H. Kano, M. Hashimoto, I. Igarashi
  • Journal of Applied Physics, January 1988, American Institute of Physics
  • DOI: 10.1063/1.341698

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http://dx.doi.org/10.1063/1.341698

The following have contributed to this page: Professor Hiroshi Noge

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