Molecular beam epitaxial growth of a GaAs layer free from antiphase domains on an exactly (100)-oriented Si substrate preheated at 1000°C

  • H. Noge, H. Kano, T. Kato, M. Hashimoto, I. Igarashi
  • Journal of Crystal Growth, June 1987, Elsevier
  • DOI: 10.1016/0022-0248(87)90306-x

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The following have contributed to this page: Professor Hiroshi Noge