All Stories

  1. A Physics-Consistent Framework for Semiconductor Device Reliability Including Multiple Degradation Mechanisms
  2. Cross Comparison Between Thermal Cycling and High Temperature Stress on I/O Connection Elements
  3. Power-Law Time Exponent n and Time-to-Failure in 4H-SiC MOSFETs: Beyond Fixed Reaction–Diffusion Theory
  4. Switching Frequency Figure of Merit for GaN FETs in Converter-on-Chip Power Conversion
  5. Power-Law Reliability Plotting for Microelectronics
  6. Reliability Challenges, Models, and Physics of Silicon Carbide and Gallium Nitride Power Devices
  7. Gate Driver for High-Frequency Power Converter
  8. Modern Trends in Microelectronics Packaging Reliability Testing
  9. Mitigation of Thermal Stability Concerns in FinFET Devices
  10. Self-heating Effects Measured in Fully Packaged FinFET Devices
  11. GaN based Ring Oscillator PWM Generator
  12. Microchip Health Monitoring System Using the FLL Circuit
  13. Reliability prediction of FinFET FPGAs by MTOL
  14. Design Considerations for GaN Based Converters
  15. On the Ballistic Transport in Si Nano-Devices
  16. A Novel Reliability Model For GaN Power FET
  17. Synopsis of Multiphysics Deep Sub-Micron Failure Rate Modeling Technique for CFR and EOL Prediction
  18. An improved reliability model for Si and GaN power FET
  19. Reliability prediction with MTOL
  20. Aerospace electronics reliability: Could it be predicted in a cost-effective fashion?
  21. Reliability matrix solution to multiple mechanism prediction
  22. Estimation of lifetimes of components that operate under ageing-attributable wearing conditions
  23. M-HTOL Principles
  24. Failure Mechanisms
  25. Introduction
  26. New M-HTOL Approach
  27. Shortcut to Accurate Reliability Prediction
  28. Reliability Prediction from Burn-In Data Fit to Reliability Models
  29. Nondestructive Quantitative Analysis of Crack Propagation in Solder Joints
  30. Design optimization of laser-induced microbridges for low resistance interline connections in ICs
  31. Celebrating fifty years of physics of failure
  32. Integrated circuit reliability prediction based on physics-of-failure models in conjunction with field study
  33. Structural health monitoring of solder joints in QFN package
  34. Prediction of earpiece field failure rate based on accelerated life tests
  35. Solder-Joint Quantitative Crack Analysis—Ohmic Resistance Approach
  36. Reliability evaluation and modeling of high density electronic packages
  37. Hardware Error Likelihood Induced by the Operation of Software
  38. Quantitatively analyzing the performance of integrated circuits and their reliability
  39. Design‐for‐reliability implementation in microelectronics packaging development
  40. FaRBS: A new PoF based VLSI reliability prediction method
  41. A study of scaling effects on DRAM reliability
  42. Experimental investigation of the optimal laser-induced microbridges
  43. Assessment of acceleration models used for BGA solder joint reliability studies
  44. Failure rate estimation of known failure mechanisms of electronic packages
  45. Local Oscillations of On-Die Supply Voltage—A Reliability Issue
  46. Reliability Simulation and Circuit-Failure Analysis in Analog and Mixed-Signal Applications
  47. Time-Dependent Dielectric Breakdown of 4H-SiC/$ \hbox{SiO}_{2}$ MOS Capacitors
  48. Reliability Simulation and Design Consideration of High Speed ADC Circuits
  49. Study of Transistor and Product NBTI Lifetime Distributions
  50. Study of Transistor and Product NBTI Lifetime Distributions
  51. Reliability Study of High-Density EBGA Packages Using the Cu Metallized Silicon
  52. Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast $I$–$V$ Techniques
  53. Supply signal fluctuations due to chip power grid resonance — a new reliability concern
  54. Compact Modeling of MOSFET Wearout Mechanisms for Circuit-Reliability Simulation
  55. SRAM stability analysis considering gate oxide SBD, NBTI and HCI
  56. Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels
  57. Spatial Distributions of Trapping Centers in $ \hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack
  58. Ultra-Fast Characterization of Transient Gate Oxide Trapping in SiC Mosfets
  59. Electronic circuit reliability modeling
  60. Enhanced Gate Induced Drain Leakage Current in HfO2 MOSFETs due to Remote Interface Trap-Assisted Tunneling
  61. Non-Arrhenius Temperature Acceleration and Stress-Dependent Voltage Acceleration for Semiconductor Device Involving Multiple Failure Mechanisms
  62. Product Reliability Trends, Derating Considerations and Failure Mechanisms with Scaled CMOS
  63. Ultra-Fast Measurements of VTH Instability in SiC MOSFETs due to Positive and Negative Constant Bias Stress
  64. Software Reliability Estimation of Microprocessor Transient Faults
  65. A New SPICE Reliability Simulation Method for Deep Submicrometer CMOS VLSI Circuits
  66. SRAM Circuit-Failure Modeling and Reliability Simulation With SPICE
  67. Spatial distributions of trapping centers in HfO2∕SiO2 gate stacks
  68. Detailed study and projection of hard breakdown evolution in ultra-thin gate oxides
  69. Liquid dispensing encapsulation in semiconductor packaging
  70. Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown
  71. Analysis of energy process window of laser metal pad cut link structure
  72. Impact of junction temperature on microelectronic device reliability and considerations for space applications
  73. Impact of the trapping of anode hot holes on silicon dioxide breakdown
  74. Encapsulation process development for flexible-circuit based chip scale packages
  75. Physics-based numerical modeling and characterization of 6H-silicon-carbide metal–oxide–semiconductor field-effect transistors
  76. Interaction between low-energy electrons and defects created by hot holes in ultrathin silicon dioxide
  77. Effect of the plasma cleaning process on plastic ball grid array package assembly reliability
  78. Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation
  79. Heavy-ion-induced soft breakdown of thin gate oxides
  80. The impact of lead‐free soldering on electronics packages
  81. Energy effect of the laser-induced vertical metallic link
  82. Time-dependent breakdown of ultra-thin SiO2 gate dielectrics under pulsed biased stress
  83. Reliability of ultrathin silicon dioxide under combined substrate hot-electron and constant voltage tunneling stress
  84. Analysis of laser metal-cut energy process window
  85. Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions
  86. Scalability study of laser-induced vertical make-link structure
  87. Reliability of laser-induced metallic vertical links
  88. A new technique for determining long-term TDDB acceleration parameters of thin gate oxides
  89. Laser formed metallic connections
  90. Laser energy limitation for buried metal cuts
  91. Laser linking of metal interconnects: analysis and design considerations
  92. Laser linking of metal interconnect: linking dynamics and failure analysis
  93. Laser-formed metallic connections employing a lateral link structure
  94. High-density laser linking of metal interconnect
  95. Short-time failure of metal interconnect caused by current pulses
  96. Metal wire cutting by repeated application of low-power laser pulses
  97. The effect of multiple laser pulses on damage to thin metallic films
  98. Improvements to the Electrically Stimulated Acoustic Wave method for analyzing bulk space charge
  99. Laser-induced line melting and cutting
  100. Analysis of the electrically stimulated acoustic-wave method for observing space charge in semi-insulating films
  101. The Mechanism of Laser‐Induced Vertical Links
  102. Bulk space charge behavior in polymethylethacrylate under an imposed virtual cathode condition
  103. Electric poling behavior of polymethylmethacrylate
  104. Laser-induced melting of thin conducting films. II. Heat-dissipating substrates
  105. The Deal fast-surface states are probably deep-level impurities in the semiconductor
  106. Deep Submicron CMOS Integrated Circuit Reliability Simulation with SPICE
  107. Impact of Device Scaling on Deep Sub-Micron Transistor Reliability - A Study of Reliability Trends Using SRAM
  108. Simulating and Improving Microelectronic Device Reliability by Scaling Voltage and Temperature
  109. Study of the Impact of Hardware Fault on Software Reliability
  110. A high performance radiation-hard field programmable analog array
  111. Acceleration factors and mechanistic study of progressive breakdown in small area ultra-thin gate oxides
  112. Combined channel segmentation and buffer insertion for routability and performance improvement of field programmable analog arrays
  113. Mechanism for reduced NBTI effect under pulsed bias stress conditions
  114. A reliability evaluation methodology for memory chips for space applications when sample size is small
  115. Reliable laser programmable gate array technology
  116. Temperature dependence of R/sub on,sp/ in silicon carbide and GaAs Schottky diode
  117. Electromigration simulation under DC/AC stresses considering microstructure
  118. Laser programmable metallic vias