All Stories

  1. A Thermodynamic Framework for Reliability Kinetics
  2. Correlation Entropy and Power-Law Kinetics
  3. Power-Law Degradation and Lifetime Interpretation in Microelectronics Reliability
  4. Linearization of BTI Degradation Across Si, SiC, and GaN
  5. A Physics-Consistent Framework for Semiconductor Device Reliability Including Multiple Degradation Mechanisms
  6. Cross Comparison Between Thermal Cycling and High Temperature Stress on I/O Connection Elements
  7. Power-Law Time Exponent n and Time-to-Failure in 4H-SiC MOSFETs: Beyond Fixed Reaction–Diffusion Theory
  8. Switching Frequency Figure of Merit for GaN FETs in Converter-on-Chip Power Conversion
  9. Power-Law Reliability Plotting for Microelectronics
  10. Reliability Challenges, Models, and Physics of Silicon Carbide and Gallium Nitride Power Devices
  11. Gate Driver for High-Frequency Power Converter
  12. Modern Trends in Microelectronics Packaging Reliability Testing
  13. Mitigation of Thermal Stability Concerns in FinFET Devices
  14. Self-heating Effects Measured in Fully Packaged FinFET Devices
  15. GaN based Ring Oscillator PWM Generator
  16. Microchip Health Monitoring System Using the FLL Circuit
  17. Reliability prediction of FinFET FPGAs by MTOL
  18. Design Considerations for GaN Based Converters
  19. On the Ballistic Transport in Si Nano-Devices
  20. A Novel Reliability Model For GaN Power FET
  21. Synopsis of Multiphysics Deep Sub-Micron Failure Rate Modeling Technique for CFR and EOL Prediction
  22. An improved reliability model for Si and GaN power FET
  23. Reliability prediction with MTOL
  24. Aerospace electronics reliability: Could it be predicted in a cost-effective fashion?
  25. Reliability matrix solution to multiple mechanism prediction
  26. Estimation of lifetimes of components that operate under ageing-attributable wearing conditions
  27. M-HTOL Principles
  28. Failure Mechanisms
  29. Introduction
  30. New M-HTOL Approach
  31. Shortcut to Accurate Reliability Prediction
  32. Reliability Prediction from Burn-In Data Fit to Reliability Models
  33. Nondestructive Quantitative Analysis of Crack Propagation in Solder Joints
  34. Design optimization of laser-induced microbridges for low resistance interline connections in ICs
  35. Celebrating fifty years of physics of failure
  36. Integrated circuit reliability prediction based on physics-of-failure models in conjunction with field study
  37. Structural health monitoring of solder joints in QFN package
  38. Prediction of earpiece field failure rate based on accelerated life tests
  39. Solder-Joint Quantitative Crack Analysis—Ohmic Resistance Approach
  40. Reliability evaluation and modeling of high density electronic packages
  41. Hardware Error Likelihood Induced by the Operation of Software
  42. Quantitatively analyzing the performance of integrated circuits and their reliability
  43. Design‐for‐reliability implementation in microelectronics packaging development
  44. FaRBS: A new PoF based VLSI reliability prediction method
  45. A study of scaling effects on DRAM reliability
  46. Experimental investigation of the optimal laser-induced microbridges
  47. Assessment of acceleration models used for BGA solder joint reliability studies
  48. Failure rate estimation of known failure mechanisms of electronic packages
  49. Local Oscillations of On-Die Supply Voltage—A Reliability Issue
  50. Reliability Simulation and Circuit-Failure Analysis in Analog and Mixed-Signal Applications
  51. Time-Dependent Dielectric Breakdown of 4H-SiC/$ \hbox{SiO}_{2}$ MOS Capacitors
  52. Reliability Simulation and Design Consideration of High Speed ADC Circuits
  53. Study of Transistor and Product NBTI Lifetime Distributions
  54. Study of Transistor and Product NBTI Lifetime Distributions
  55. Reliability Study of High-Density EBGA Packages Using the Cu Metallized Silicon
  56. Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast $I$–$V$ Techniques
  57. Supply signal fluctuations due to chip power grid resonance — a new reliability concern
  58. Compact Modeling of MOSFET Wearout Mechanisms for Circuit-Reliability Simulation
  59. SRAM stability analysis considering gate oxide SBD, NBTI and HCI
  60. Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels
  61. Spatial Distributions of Trapping Centers in $ \hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack
  62. Ultra-Fast Characterization of Transient Gate Oxide Trapping in SiC Mosfets
  63. Electronic circuit reliability modeling
  64. Enhanced Gate Induced Drain Leakage Current in HfO2 MOSFETs due to Remote Interface Trap-Assisted Tunneling
  65. Non-Arrhenius Temperature Acceleration and Stress-Dependent Voltage Acceleration for Semiconductor Device Involving Multiple Failure Mechanisms
  66. Product Reliability Trends, Derating Considerations and Failure Mechanisms with Scaled CMOS
  67. Ultra-Fast Measurements of VTH Instability in SiC MOSFETs due to Positive and Negative Constant Bias Stress
  68. Software Reliability Estimation of Microprocessor Transient Faults
  69. A New SPICE Reliability Simulation Method for Deep Submicrometer CMOS VLSI Circuits
  70. SRAM Circuit-Failure Modeling and Reliability Simulation With SPICE
  71. Spatial distributions of trapping centers in HfO2∕SiO2 gate stacks
  72. Detailed study and projection of hard breakdown evolution in ultra-thin gate oxides
  73. Liquid dispensing encapsulation in semiconductor packaging
  74. Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown
  75. Analysis of energy process window of laser metal pad cut link structure
  76. Impact of junction temperature on microelectronic device reliability and considerations for space applications
  77. Impact of the trapping of anode hot holes on silicon dioxide breakdown
  78. Encapsulation process development for flexible-circuit based chip scale packages
  79. Physics-based numerical modeling and characterization of 6H-silicon-carbide metal–oxide–semiconductor field-effect transistors
  80. Interaction between low-energy electrons and defects created by hot holes in ultrathin silicon dioxide
  81. Effect of the plasma cleaning process on plastic ball grid array package assembly reliability
  82. Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation
  83. Heavy-ion-induced soft breakdown of thin gate oxides
  84. The impact of lead‐free soldering on electronics packages
  85. Energy effect of the laser-induced vertical metallic link
  86. Time-dependent breakdown of ultra-thin SiO2 gate dielectrics under pulsed biased stress
  87. Reliability of ultrathin silicon dioxide under combined substrate hot-electron and constant voltage tunneling stress
  88. Analysis of laser metal-cut energy process window
  89. Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions
  90. Scalability study of laser-induced vertical make-link structure
  91. Reliability of laser-induced metallic vertical links
  92. A new technique for determining long-term TDDB acceleration parameters of thin gate oxides
  93. Laser formed metallic connections
  94. Laser energy limitation for buried metal cuts
  95. Laser linking of metal interconnects: analysis and design considerations
  96. Laser linking of metal interconnect: linking dynamics and failure analysis
  97. Laser-formed metallic connections employing a lateral link structure
  98. High-density laser linking of metal interconnect
  99. Short-time failure of metal interconnect caused by current pulses
  100. Metal wire cutting by repeated application of low-power laser pulses
  101. The effect of multiple laser pulses on damage to thin metallic films
  102. Improvements to the Electrically Stimulated Acoustic Wave method for analyzing bulk space charge
  103. Laser-induced line melting and cutting
  104. Analysis of the electrically stimulated acoustic-wave method for observing space charge in semi-insulating films
  105. The Mechanism of Laser‐Induced Vertical Links
  106. Bulk space charge behavior in polymethylethacrylate under an imposed virtual cathode condition
  107. Electric poling behavior of polymethylmethacrylate
  108. Laser-induced melting of thin conducting films. II. Heat-dissipating substrates
  109. The Deal fast-surface states are probably deep-level impurities in the semiconductor
  110. Deep Submicron CMOS Integrated Circuit Reliability Simulation with SPICE
  111. Impact of Device Scaling on Deep Sub-Micron Transistor Reliability - A Study of Reliability Trends Using SRAM
  112. Simulating and Improving Microelectronic Device Reliability by Scaling Voltage and Temperature
  113. Study of the Impact of Hardware Fault on Software Reliability
  114. A high performance radiation-hard field programmable analog array
  115. Acceleration factors and mechanistic study of progressive breakdown in small area ultra-thin gate oxides
  116. Combined channel segmentation and buffer insertion for routability and performance improvement of field programmable analog arrays
  117. Mechanism for reduced NBTI effect under pulsed bias stress conditions
  118. A reliability evaluation methodology for memory chips for space applications when sample size is small
  119. Reliable laser programmable gate array technology
  120. Temperature dependence of R/sub on,sp/ in silicon carbide and GaAs Schottky diode
  121. Electromigration simulation under DC/AC stresses considering microstructure
  122. Laser programmable metallic vias