All Stories

  1. Power-Law Time Exponent n and Time-to-Failure in 4H-SiC MOSFETs: Beyond Fixed Reaction–Diffusion Theory
  2. Switching Frequency Figure of Merit for GaN FETs in Converter-on-Chip Power Conversion
  3. Power-Law Reliability Plotting for Microelectronics
  4. Reliability Challenges, Models, and Physics of Silicon Carbide and Gallium Nitride Power Devices
  5. Gate Driver for High-Frequency Power Converter
  6. Modern Trends in Microelectronics Packaging Reliability Testing
  7. Mitigation of Thermal Stability Concerns in FinFET Devices
  8. Self-heating Effects Measured in Fully Packaged FinFET Devices
  9. GaN based Ring Oscillator PWM Generator
  10. Microchip Health Monitoring System Using the FLL Circuit
  11. Reliability prediction of FinFET FPGAs by MTOL
  12. Design Considerations for GaN Based Converters
  13. On the Ballistic Transport in Si Nano-Devices
  14. A Novel Reliability Model For GaN Power FET
  15. Synopsis of Multiphysics Deep Sub-Micron Failure Rate Modeling Technique for CFR and EOL Prediction
  16. An improved reliability model for Si and GaN power FET
  17. Reliability prediction with MTOL
  18. Aerospace electronics reliability: Could it be predicted in a cost-effective fashion?
  19. Reliability matrix solution to multiple mechanism prediction
  20. Estimation of lifetimes of components that operate under ageing-attributable wearing conditions
  21. M-HTOL Principles
  22. Failure Mechanisms
  23. Introduction
  24. New M-HTOL Approach
  25. Shortcut to Accurate Reliability Prediction
  26. Reliability Prediction from Burn-In Data Fit to Reliability Models
  27. Nondestructive Quantitative Analysis of Crack Propagation in Solder Joints
  28. Design optimization of laser-induced microbridges for low resistance interline connections in ICs
  29. Celebrating fifty years of physics of failure
  30. Integrated circuit reliability prediction based on physics-of-failure models in conjunction with field study
  31. Structural health monitoring of solder joints in QFN package
  32. Prediction of earpiece field failure rate based on accelerated life tests
  33. Solder-Joint Quantitative Crack Analysis—Ohmic Resistance Approach
  34. Reliability evaluation and modeling of high density electronic packages
  35. Hardware Error Likelihood Induced by the Operation of Software
  36. Quantitatively analyzing the performance of integrated circuits and their reliability
  37. Design‐for‐reliability implementation in microelectronics packaging development
  38. FaRBS: A new PoF based VLSI reliability prediction method
  39. A study of scaling effects on DRAM reliability
  40. Experimental investigation of the optimal laser-induced microbridges
  41. Assessment of acceleration models used for BGA solder joint reliability studies
  42. Failure rate estimation of known failure mechanisms of electronic packages
  43. Local Oscillations of On-Die Supply Voltage—A Reliability Issue
  44. Reliability Simulation and Circuit-Failure Analysis in Analog and Mixed-Signal Applications
  45. Time-Dependent Dielectric Breakdown of 4H-SiC/$ \hbox{SiO}_{2}$ MOS Capacitors
  46. Reliability Simulation and Design Consideration of High Speed ADC Circuits
  47. Study of Transistor and Product NBTI Lifetime Distributions
  48. Study of Transistor and Product NBTI Lifetime Distributions
  49. Reliability Study of High-Density EBGA Packages Using the Cu Metallized Silicon
  50. Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast $I$–$V$ Techniques
  51. Supply signal fluctuations due to chip power grid resonance — a new reliability concern
  52. Compact Modeling of MOSFET Wearout Mechanisms for Circuit-Reliability Simulation
  53. SRAM stability analysis considering gate oxide SBD, NBTI and HCI
  54. Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels
  55. Spatial Distributions of Trapping Centers in $ \hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack
  56. Ultra-Fast Characterization of Transient Gate Oxide Trapping in SiC Mosfets
  57. Electronic circuit reliability modeling
  58. Enhanced Gate Induced Drain Leakage Current in HfO2 MOSFETs due to Remote Interface Trap-Assisted Tunneling
  59. Non-Arrhenius Temperature Acceleration and Stress-Dependent Voltage Acceleration for Semiconductor Device Involving Multiple Failure Mechanisms
  60. Product Reliability Trends, Derating Considerations and Failure Mechanisms with Scaled CMOS
  61. Ultra-Fast Measurements of VTH Instability in SiC MOSFETs due to Positive and Negative Constant Bias Stress
  62. Software Reliability Estimation of Microprocessor Transient Faults
  63. A New SPICE Reliability Simulation Method for Deep Submicrometer CMOS VLSI Circuits
  64. SRAM Circuit-Failure Modeling and Reliability Simulation With SPICE
  65. Spatial distributions of trapping centers in HfO2∕SiO2 gate stacks
  66. Detailed study and projection of hard breakdown evolution in ultra-thin gate oxides
  67. Liquid dispensing encapsulation in semiconductor packaging
  68. Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown
  69. Analysis of energy process window of laser metal pad cut link structure
  70. Impact of junction temperature on microelectronic device reliability and considerations for space applications
  71. Impact of the trapping of anode hot holes on silicon dioxide breakdown
  72. Encapsulation process development for flexible-circuit based chip scale packages
  73. Physics-based numerical modeling and characterization of 6H-silicon-carbide metal–oxide–semiconductor field-effect transistors
  74. Interaction between low-energy electrons and defects created by hot holes in ultrathin silicon dioxide
  75. Effect of the plasma cleaning process on plastic ball grid array package assembly reliability
  76. Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation
  77. Heavy-ion-induced soft breakdown of thin gate oxides
  78. The impact of lead‐free soldering on electronics packages
  79. Energy effect of the laser-induced vertical metallic link
  80. Time-dependent breakdown of ultra-thin SiO2 gate dielectrics under pulsed biased stress
  81. Reliability of ultrathin silicon dioxide under combined substrate hot-electron and constant voltage tunneling stress
  82. Analysis of laser metal-cut energy process window
  83. Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions
  84. Scalability study of laser-induced vertical make-link structure
  85. Reliability of laser-induced metallic vertical links
  86. A new technique for determining long-term TDDB acceleration parameters of thin gate oxides
  87. Laser formed metallic connections
  88. Laser energy limitation for buried metal cuts
  89. Laser linking of metal interconnects: analysis and design considerations
  90. Laser linking of metal interconnect: linking dynamics and failure analysis
  91. Laser-formed metallic connections employing a lateral link structure
  92. High-density laser linking of metal interconnect
  93. Short-time failure of metal interconnect caused by current pulses
  94. Metal wire cutting by repeated application of low-power laser pulses
  95. The effect of multiple laser pulses on damage to thin metallic films
  96. Improvements to the Electrically Stimulated Acoustic Wave method for analyzing bulk space charge
  97. Laser-induced line melting and cutting
  98. Analysis of the electrically stimulated acoustic-wave method for observing space charge in semi-insulating films
  99. The Mechanism of Laser‐Induced Vertical Links
  100. Bulk space charge behavior in polymethylethacrylate under an imposed virtual cathode condition
  101. Electric poling behavior of polymethylmethacrylate
  102. Laser-induced melting of thin conducting films. II. Heat-dissipating substrates
  103. The Deal fast-surface states are probably deep-level impurities in the semiconductor
  104. Deep Submicron CMOS Integrated Circuit Reliability Simulation with SPICE
  105. Impact of Device Scaling on Deep Sub-Micron Transistor Reliability - A Study of Reliability Trends Using SRAM
  106. Simulating and Improving Microelectronic Device Reliability by Scaling Voltage and Temperature
  107. Study of the Impact of Hardware Fault on Software Reliability
  108. A high performance radiation-hard field programmable analog array
  109. Acceleration factors and mechanistic study of progressive breakdown in small area ultra-thin gate oxides
  110. Combined channel segmentation and buffer insertion for routability and performance improvement of field programmable analog arrays
  111. Mechanism for reduced NBTI effect under pulsed bias stress conditions
  112. A reliability evaluation methodology for memory chips for space applications when sample size is small
  113. Reliable laser programmable gate array technology
  114. Temperature dependence of R/sub on,sp/ in silicon carbide and GaAs Schottky diode
  115. Electromigration simulation under DC/AC stresses considering microstructure
  116. Laser programmable metallic vias