All Stories

  1. Embedding Operant Conditioning Functions in a Four-Terminal Memristor

    Article • ACS Applied Electronic Materials, June 2026, American Chemical Society (ACS)

    Tetsuya Tohei

  2. Uncovering crystal structure evolution via nanobeam X-ray diffraction with a continuity-driven machine learning approach

    Article • Materials & Design, February 2026, Elsevier

    Tetsuya Tohei

  3. Digital Twin-Enabled Sim-to-Real Reinforcement Learning for Linear and Multi-Level Analog Memristor Programming

    Article • January 2026, Elsevier

    Tetsuya Tohei

  4. Revealing crystallographically distinct growth sectors in Na-flux GaN via machine learning-assisted nanobeam x-ray diffraction analysis

    Article • APL Machine Learning, August 2025, American Institute of Physics

    Tetsuya Tohei

  5. Real time nanoscale x-ray diffraction of nitride semiconductor transistor in working condition

    Article • Journal of Applied Physics, August 2025, American Institute of Physics

    Tetsuya Tohei

  6. Machine learning reveals hidden crystal defects in GaN using position-dependent X-ray data

    Article • Journal of Applied Crystallography, July 2025, International Union of Crystallography

    ZHENDONG WU, Tetsuya Tohei

  7. Anchor point based image registration for absolute scale topographic structure detection in microscopy

    Article • Scientific Reports, April 2025, Springer Science + Business Media

    Tetsuya Tohei

  8. Analyses of oxygen precipitates in CZ-Si by X-ray diffuse scattering using parallel X-ray beam

    Article • Japanese Journal of Applied Physics, April 2025, Institute of Physics Publishing

    Tetsuya Tohei

  9. Enhancing memristor multilevel resistance state with linearity potentiation via the feedforward pulse scheme

    Article • Nanoscale Horizons, January 2025, Royal Society of Chemistry

    Tetsuya Tohei

  10. Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction

    Article • Journal of Applied Physics, June 2024, American Institute of Physics

    Tetsuya Tohei

  11. Local strain distribution analysis in strained SiGe spintronics devices

    Article • Japanese Journal of Applied Physics, January 2024, Institute of Physics Publishing

    Tetsuya Tohei

  12. Crystalline Microstructure and Versatile Resistive Switching Property in Rutile TiO2-x Four-Terminal Memristors

    Article • January 2024, Springer Science + Business Media

    Tetsuya Tohei

  13. Engineering Crystal Habit: Applications of Polymorphism and Microstexture Learning from Nature

    Article • January 2024, Springer Science + Business Media

    Tetsuya Tohei

  14. Conduction mechanism of Schottky contacts fabricated on etch pits originating from single threading dislocation in a highly Si-doped HVPE GaN substrate

    Article • Materials Science in Semiconductor Processing, November 2023, Elsevier

    Tetsuya Tohei

  15. Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates

    Article • Journal of Electronic Materials, March 2023, Springer Science + Business Media

    Tetsuya Tohei

  16. Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates

    Article • Scientific Reports, February 2023, Springer Science + Business Media

    Tetsuya Tohei

  17. High-temperature operation of gallium oxide memristors up to 600 K

    Article • Scientific Reports, January 2023, Springer Science + Business Media

    Tetsuya Tohei

  18. Interface engineering of amorphous gallium oxide crossbar array memristors for neuromorphic computing

    Article • Japanese Journal of Applied Physics, January 2023, Institute of Physics Publishing

    Tetsuya Tohei

  19. Gate-tunable plasticity in artificial synaptic devices based on four-terminal amorphous gallium oxide memristors

    Article • Applied Physics Express, January 2023, Institute of Physics Publishing

    Tetsuya Tohei

  20. Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning

    Article • Science Advances, September 2022, American Association for the Advancement of Science

    Tetsuya Tohei

  21. Versatile artificial synapse implemented in TiO2-x single crystal memristor

    Article • ACS Applied Electronic Materials, April 2022, American Chemical Society (ACS)

    Tetsuya Tohei

  22. Breaking of Thermopower–Conductivity Trade‐Off in LaTiO3 Film around Mott Insulator to Metal Transition

    Article • Advanced Science, October 2021, Wiley

    Tetsuya Tohei

  23. Thermal strain analysis considering in-plane anisotropy for sputtered AlN on c- and a-plane sapphire under high-temperature annealing

    Article • AIP Advances, September 2021, American Institute of Physics

    Tetsuya Tohei

  24. Nano-second dynamics of piezoelectric deformation in working nitride transistor by synchrotron XRD

    Article • Applied Physics Express, September 2021, Institute of Physics Publishing

    Tetsuya Tohei

  25. Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates

    Article • Journal of Applied Physics, June 2021, American Institute of Physics

    Tetsuya Tohei

  26. Local piezoelectric properties in Na-flux GaN bulk single crystals

    Article • Journal of Applied Physics, September 2020, American Institute of Physics

    Tetsuya Tohei

  27. Fabrication of GaO x based crossbar array memristive devices and their resistive switching properties

    Article • Japanese Journal of Applied Physics, May 2020, Institute of Physics Publishing

    Tetsuya Tohei

  28. Author Correction: Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO2−x Memristive Devices

    Article • Scientific Reports, October 2019, Springer Science + Business Media

    Tetsuya Tohei

  29. Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO2−x Memristive Devices

    Article • Scientific Reports, July 2019, Springer Science + Business Media

    Tetsuya Tohei

  30. Correlation between current leakage and structural properties of threading dislocations in GaN bulk single crystals grown using a Na-flux method

    Article • Japanese Journal of Applied Physics, May 2019, Institute of Physics Publishing

    Tetsuya Tohei

  31. Quantitative analysis of lattice plane microstructure in the growth direction of a modified Na-flux GaN crystal using nanobeam X-ray diffraction

    Article • Japanese Journal of Applied Physics, May 2019, Institute of Physics Publishing

    Tetsuya Tohei

  32. Local current leakage at threading dislocations in GaN bulk single crystals grown by a modified Na-flux method

    Article • Japanese Journal of Applied Physics, April 2019, Institute of Physics Publishing

    Tetsuya Tohei

  33. Demonstrative operation of four-terminal memristive devices fabricated on reduced TiO2 single crystals

    Article • Scientific Reports, February 2019, Springer Science + Business Media

    Tetsuya Tohei

  34. Depth-resolved analysis of lattice distortions in high-Ge-content SiGe/compositionally graded SiGe films using nanobeam x-ray diffraction

    Article • Semiconductor Science and Technology, October 2018, Institute of Physics Publishing

    Tetsuya Tohei

  35. Analysis of Ti valence states in resistive switching regions of a rutile TiO2− x four-terminal memristive device

    Article • Japanese Journal of Applied Physics, April 2018, Institute of Physics Publishing

    Tetsuya Tohei

  36. Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy

    Article • Journal of Applied Physics, March 2018, American Institute of Physics

    Tetsuya Tohei

  37. Inversion domain network stabilization and spinel phase suppression in ZnO

    Article • Journal of the American Ceramic Society, January 2018, Wiley

    Tetsuya Tohei

  38. Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction

    Article • Journal of Applied Physics, January 2018, American Institute of Physics

    Tetsuya Tohei

  39. Ferroelectric domains and phase evolution in (Fe:) KTa1−Nb O3 crystals

    Article • Applied Surface Science, August 2017, Elsevier

    Tetsuya Tohei

  40. Inversion domain boundaries in Mn and Al dual-doped ZnO: Atomic structure and electronic properties

    Article • Journal of the American Ceramic Society, May 2017, Wiley

    Tetsuya Tohei

  41. Thermoelectric phase diagram of the SrTiO3–SrNbO3 solid solution system

    Article • Journal of Applied Physics, May 2017, American Institute of Physics

    Tetsuya Tohei

  42. Reactive Solid-Phase Epitaxy and Electrical Conductivity of Layered Sodium Manganese Oxide Films

    Article • Crystal Growth & Design, March 2017, American Chemical Society (ACS)

    Tetsuya Tohei

  43. A Novel Class of Multiferroic Material, Bi4Ti3O12·nBiFeO3 with Localized Magnetic Ordering Evaluated from Their Single Crystals

    Article • Advanced Electronic Materials, December 2016, Wiley

    Tetsuya Tohei

  44. First principles calculation of thermal expansion coefficients of pure and Cr doped α-alumina crystals

    Article • Journal of Applied Physics, August 2016, American Institute of Physics

    Tetsuya Tohei

  45. Atomic structures of a liquid-phase bonded metal/nitride heterointerface

    Article • Scientific Reports, March 2016, Springer Science + Business Media

    Tetsuya Tohei

  46. Microstructures and improvedJc–Hcharacteristics of Cl-containing YBCO thin films prepared by the fluorine-free MOD method

    Article • Superconductor Science and Technology, December 2015, Institute of Physics Publishing

    Tetsuya Tohei

  47. First principles study of oxygen diffusion in aα-alumina twin grain boundary

    Article • The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, November 2015, Taylor & Francis

    Tetsuya Tohei

  48. Solid-Phase Epitaxial Growth of A-Site-Ordered Perovskite Sr4−xErxCo4O12−δ: A Room Temperature Ferrimagnetic p-Type Semiconductor

    Article • Advanced Electronic Materials, October 2015, Wiley

    Professor Ichiro Terasaki, Tetsuya Tohei

  49. Room‐Temperature‐Protonation‐Driven On‐Demand Metal–Insulator Conversion of a Transition Metal Oxide

    Article • Advanced Electronic Materials, June 2015, Wiley

    Tetsuya Tohei

  50. First Principles Calculation of Thermal Expansion of Carbon and Boron Nitrides Based on Quasi-Harmonic Approximation

    Article • MATERIALS TRANSACTIONS, January 2015, Japan Institute of Metals

    Tetsuya Tohei

  51. Charge/Discharge Interface of LFP Cathode Material Revealed by Atomic-Resolution Electron Microscopy

    Article • Chemistry of Materials, October 2014, American Chemical Society (ACS)

    Tetsuya Tohei

  52. Double Columnar Structure with a Nanogradient Composite for Increased Oxygen Diffusivity and Reduction Activity

    Article • Advanced Energy Materials, July 2014, Wiley

    Tetsuya Tohei

  53. Large magnetoelectric coupling in magnetically short-range ordered Bi5Ti3FeO15 film

    Article • Scientific Reports, June 2014, Springer Science + Business Media

    Tetsuya Tohei

  54. Titanium enrichment and strontium depletion near edge dislocation in strontium titanate [001]/(110) low-angle tilt grain boundary

    Article • Journal of Materials Science, March 2014, Springer Science + Business Media

    Tetsuya Tohei

  55. Fluorine in Shark Teeth: Its Direct Atomic‐Resolution Imaging and Strengthening Function

    Article • Angewandte Chemie, January 2014, Wiley

    Tetsuya Tohei

  56. Determination of Exact Positions of Individual Tungsten Atoms in Unisize Tungsten Oxide Clusters Supported on Carbon Substrate by HAADF-STEM Observation

    Article • The Journal of Physical Chemistry C, January 2014, American Chemical Society (ACS)

    Tetsuya Tohei

  57. A New Layered Iron Arsenide Superconductor: (Ca,Pr)FeAs2

    Article • Journal of the American Chemical Society, January 2014, American Chemical Society (ACS)

    Tetsuya Tohei

  58. Synthesis of string-bean-like anisotropic titania nanoparticles with basic amino acids

    Article • RSC Advances, January 2014, Royal Society of Chemistry

    Tetsuya Tohei

  59. Multivariate Statistical Characterization of Charged and Uncharged Domain Walls in Multiferroic Hexagonal YMnO3 Single Crystal Visualized by a Spherical Aberration-Corrected STEM

    Article • Nano Letters, September 2013, American Chemical Society (ACS)

    Tetsuya Tohei

  60. First principles calculation of dopant solution energy in HfO2 polymorphs

    Article • Journal of Applied Physics, October 2012, American Institute of Physics

    Tetsuya Tohei

  61. Nanowire of hexagonal gallium oxynitride: Direct observation of its stacking disorder and its long nanowire growth

    Article • Journal of the European Ceramic Society, July 2012, Elsevier

    Tetsuya Tohei

  62. Chain-like nanostructures from anisotropic self-assembly of semiconducting metal oxide nanoparticles with a block copolymer

    Article • Chemical Communications, January 2012, Royal Society of Chemistry

    Tetsuya Tohei

  63. First-Principles Calculations of Phase Transition in CaTiO3 under Negative Static Pressure

    Article • Journal of the Korean Physical Society, September 2011, Korean Physical Society

    Tetsuya Tohei

  64. A new iron pnictide oxide (Fe2As2)(Ca5(Mg, Ti)4Oy) and a new phase in the Fe–As–Ca–Mg–Ti–O system

    Article • Superconductor Science and Technology, July 2011, Institute of Physics Publishing

    Tetsuya Tohei

  65. Structures of a Σ = 9, [110]/{221} symmetrical tilt grain boundary in SrTiO3

    Article • Journal of Materials Science, January 2011, Springer Science + Business Media

    Tetsuya Tohei

  66. TEM observation of liquid-phase bonded aluminum–silicon/aluminum nitride hetero interface

    Article • Journal of Materials Science, November 2010, Springer Science + Business Media

    Tetsuya Tohei

  67. Cr diffusion inα-Al2O3

    Article • Physical Review B, November 2010, American Physical Society (APS)

    Tetsuya Tohei

  68. Origins of Hole Doping and Relevant Optoelectronic Properties of Wide Gap p-Type Semiconductor, LaCuOSe

    Article • Journal of the American Chemical Society, October 2010, American Chemical Society (ACS)

    Tetsuya Tohei

  69. Application of coincidence of reciprocal lattice point model to metal/sapphire hetero interfaces

    Article • Materials Science and Engineering B, October 2010, Elsevier

    Tetsuya Tohei

  70. Interface atomic structure of LaCuOSe:Mg epitaxial thin film and MgO substrate

    Article • Materials Science and Engineering B, October 2010, Elsevier

    Tetsuya Tohei

  71. A new homologous series of iron pnictide oxide superconductors (Fe2As2)(Can+ 2(Al, Ti)nOy) (n= 2, 3, 4)

    Article • Superconductor Science and Technology, September 2010, Institute of Physics Publishing

    Tetsuya Tohei

  72. Homologous series of iron pnictide oxide superconductors (Fe2As2)[Can+1(Sc,Ti)nOy] (n=3,4,5) with extremely thick blocking layers

    Article • Applied Physics Letters, August 2010, American Institute of Physics

    Tetsuya Tohei

  73. Direct imaging of doped fluorine in LaFeAsO1−xFx superconductor by atomic scale spectroscopy

    Article • Applied Physics Letters, November 2009, American Institute of Physics

    Tetsuya Tohei

  74. Geometric ferroelectricity in rare-earth compounds RGaO3 and RInO3

    Article • Physical Review B, April 2009, American Physical Society (APS)

    Tetsuya Tohei

  75. First Principles Calculations of Vacancy Formation Energies in Σ13 Pyramidal Twin Grain Boundary of α-Al<SUB>2</SUB>O<SUB>3</SUB>

    Article • MATERIALS TRANSACTIONS, January 2009, Japan Institute of Metals

    Tetsuya Tohei

  76. Which is stiffer: diamond or graphite?

    Article • Physical Review B, February 2006, American Physical Society (APS)

    Tetsuya Tohei

  77. Square-shape magnetocaloric effect in Mn3GaC...

    Article • Journal of Magnetism and Magnetic Materials, April 2005, Elsevier

    Tetsuya Tohei

  78. Ab initiolattice dynamics and phase transformations ofZrO2...

    Article • Physical Review B, February 2005, American Physical Society (APS)

    Tetsuya Tohei

  79. General Rule for Displacive Phase Transitions in Perovskite Compounds Revisited by First Principles Calculations

    Article • Physical Review Letters, January 2005, American Physical Society (APS)

    Tetsuya Tohei

  80. Cooling into cryogenic temperature by ferromagnets

    Article • Journal of Magnetism and Magnetic Materials, September 2004, Elsevier

    Tetsuya Tohei

  81. Magnetic cooling down to cryogenic temperature by antiferro-magnets

    Article • Journal of Magnetism and Magnetic Materials, May 2004, Elsevier

    Tetsuya Tohei

  82. Negative magnetocaloric effect at the antiferromagnetic to ferromagnetic transition of Mn3GaC

    Article • Journal of Applied Physics, August 2003, American Institute of Physics

    Tetsuya Tohei