What is it about?
Nitride semiconductor devices under operation are experiencing dynamic lattice deformations due to their piezoelectric properties. In-situ synchrotron X-ray diffraction (XRD) can capture the dynamics of piezoelectric deformations (or strains) in working nitride transistor devices (AlGaN/GaN HEMTs) at nano-second time resolution.
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Why is it important?
Nitride semiconductors (GaN, AlN) have piezoelectricity and inverse-piezoelectric strain is induced when gate voltage is applied to a nitride device. This property is unique to nitrides (conventional semiconductors such as Si or GaAs do not show the effect), and possibly affects characteristics and reliability of the nitride device. Understanding of strain dynamics in working condition nitride semiconductors is essential for improved device design and contribute to development of next-generation power device technologies.
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This page is a summary of: Analysis of inverse-piezoelectric-effect-induced lattice deformation in AlGaN/GaN high-electron-mobility transistors by time-resolved synchrotron radiation nanobeam X-ray diffraction, Applied Physics Express, September 2021, Institute of Physics Publishing,
DOI: 10.35848/1882-0786/ac1ee4.
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