Inversion domain boundaries in Mn and Al dual-doped ZnO: Atomic structure and electronic properties

What is it about?

The atomic and electronic structures of inversion domain boundaries (IDBs) in Mn-Al dual-doped ZnO (Zn0.89Mn0.1Al0.01O) were investigated. STEM-EDS and EELS analysis revealed significant localization of Mn and minor localization of Al at the basal-plane IDB. A theoretical model of the Mn-doped IDB was constructed and the effects of IDBs on the thermoelectric properties were discussed.

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Photo by Abolfazl Pahlavan on Unsplash

Photo by Abolfazl Pahlavan on Unsplash

Why is it important?

Inversion domains (ID) are nanoscale regions that form in ZnO (zinc oxide) upon doping with certain elements (e.g. Ga, In, Sn, Fe and Sb) and exhibit inverted c-axis polarity across specific crystallographic planes, referred to as inversion domain boundaries (IDBs), which form their interfaces. Due to the structural modifications they induce at the nanoscale, IDBs can alter the thermoelectric, optoelectronic and magnetic properties of ZnO. Understanding and controlling of IDBs will contribute to the exploration of new characteristics of ZnO based materials.