What is it about?
The electrical characteristics of individual threading dislocations (TDs) in GaN crystal substrates were investigated by C-AFM. Screw TDs with a helical morphology tend to cause reverse leakage and modification of the dislocation core interacted with point defects was suggested to be responsible for the electrical property.
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Why is it important?
Gallium nitride (GaN) is a promising wide-gap semiconductor material for next generation high-power electronic devices such as Schottky barrier diodes or MOSFETs. For its practical use the suppression of electrical degradation due to dislocations is a vital issue. The C-AFM (conductive atomic force microscopy) and MPPL (multi-photon photo luminescence) analysis can reveal electrical and morphological property of individual dislocation in GaN substrates. It provides a clue to remedy for potential killer defects in GaN devices and contribute to the development of power electronics with high efficiency and high reliability.
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This page is a summary of: Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates, Scientific Reports, February 2023, Springer Science + Business Media,
DOI: 10.1038/s41598-023-29458-3.
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