What is it about?
Gate control of synaptic potentiation/depression (analog multi-level resistive-change) was demonstrated in the four-terminal TiO2-x memristor. The device can mimic the hetero-synaptic functions using multi-terminal inputs without involving active elements (nMOS transistors).
Featured Image
Photo by Hal Gatewood on Unsplash
Why is it important?
Gate controllable analog resistive-change was achieved in titanium oxide (TiO2-x) four-terminal memristor. This mimics the hetero-synaptic plasticity where synaptic strength is modulated by multiple synapse inputs. Crystal orientation of rutile TiO2 (isotropic (001) surface) is the key for good reversibility of dopants (oxygen vacancies) redistribution and resistive-change property. It will find potential application for a novel non-volatile memory (ReRAM) or neuromorphic AI computing device with tunable synaptic plasticity (artificial synapse).
Read the Original
This page is a summary of: Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO2−x Memristive Devices, Scientific Reports, July 2019, Springer Science + Business Media,
DOI: 10.1038/s41598-019-46192-x.
You can read the full text:
Contributors
The following have contributed to this page
