What is it about?
Crossbar array memristors using amorphous gallium oxide (a-GaOx) were fabricated for implementing high-speed and wide-dynamic range artificial synaptic functions. It demonstrates non-volatile retention over 10^4 s and the multi-level conductance modulation, allowing a robust implementation of spike-timing-dependent plasticity (STDP) with significant weight-change rates.
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Why is it important?
The results indicate that the amorphous GaOx crossbar array memristor is a promising hardware platform for neuromorphic computing or AI device applications. It is also a possible candidate for the novel non-volatile memory system that can operate at high temperature environments (up to 600 K).
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This page is a summary of: Interface engineering of amorphous gallium oxide crossbar array memristors for neuromorphic computing, Japanese Journal of Applied Physics, January 2023, Institute of Physics Publishing,
DOI: 10.35848/1347-4065/acb060.
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