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This chapter presents the basic principles of novel four-terminal memristive devices and proof of concept results obtained in the memristors fabricated on rutile TiO2–x single crystals. Systematic electronic and microstructural characterization show that the behavior of dopant (oxygen vacancy) redistribution and resultant resistive switching properties strongly depend on crystal orientation reflecting crystalline anisotropy or crystal habits of titanium oxides. These experiments prove that the choice of crystal orientation is critical to achieve good reversibility of electronic properties in single crystalline memristors. Feasibility of imparting versatile synaptic functionalities by controlling two dimensional distribution of dopants among multi-terminals configuration is discussed.

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This page is a summary of: Crystalline Microstructure and Versatile Resistive Switching Property in Rutile TiO2-x Four-Terminal Memristors, January 2024, Springer Science + Business Media,
DOI: 10.1007/978-981-96-0266-7_11.
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