What is it about?
Nitride semiconductor devices under operating condition are experiencing lattice deformations due to combined effects of piezoelectricity and thermal expansion by self-heating. Synchrotron radiation x-ray diffraction (XRD) allows nano-scale real time analysis of local lattice deformations (or strains) in working nitride devices such as high-electron-mobility transistors (AlGaN/GaN HEMTs).
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Why is it important?
Detailed knowledge about local strain dynamics in working condition nitride semiconductors (GaN, AlGaN) are helpful for improved device design and contribute to development of next-generation power device technologies.
Read the Original
This page is a summary of: In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition, Journal of Applied Physics, August 2025, American Institute of Physics,
DOI: 10.1063/5.0275921.
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Resources
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