What is it about?
Resistive switching operation was demonstrated in four-terminal memristor fabricated on reduced titanium oxide (TiO2−x) single crystal, where two-dimensional redistribution of dopants (oxygen vacancies) brings non-volatile resistivity change. Microscopic analysis showed that the choice of crystal orientation is critical for the reversibility of dopant movements and resistive switching properties.
Featured Image
Photo by Hal Gatewood on Unsplash
Why is it important?
Four-terminal (or multi-terminal) configuration of the device allows control of two-dimensional distribution of dopants between multiple-electrodes, which can produce diverse resistive-change responses or ‘synaptic’ properties. The STEM-EELS analysis revealed that the electronic state (Ti valence) change without crystal structure change is the key for the reversible switching in TiO2-x (001) devices. It will find potential application to non-volatile memory or neuromorphic AI computing device (artificial synapse).
Read the Original
This page is a summary of: Demonstrative operation of four-terminal memristive devices fabricated on reduced TiO2 single crystals, Scientific Reports, February 2019, Springer Science + Business Media,
DOI: 10.1038/s41598-018-38347-z.
You can read the full text:
Contributors
The following have contributed to this page
