What is it about?
Atomic structure of a liquid-phase bonded heterointerface between Al alloy and AlN single crystal was analyzed using aberration corrected scanning transmission electron microscopy (STEM). We found that the polarity of the topmost AlN layer is inverted from the AlN substrate due to the presence of the MgO interlayer, which contributes to the stable interfacial bonding with the Al alloy.
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Why is it important?
Liquid-phase bonding is a technologically important method to fabricate high-performance metal/ceramic heterostructures used for power electronic devices. Understanding mechanisms of the hetero-interface bonding and the polarity inversion in nitride crystals (AlN, GaN) are significant for the process development of nitride semiconductor devices.
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This page is a summary of: Atomic structures of a liquid-phase bonded metal/nitride heterointerface, Scientific Reports, March 2016, Springer Science + Business Media,
DOI: 10.1038/srep22936.
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