All Stories

  1. Transfer or delivery of micro light-emitting diodes for light-emitting diode displays
  2. Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au/n-Type Si Schottky Barrier Diode Modified Using a PEDOT:PSS Interlayer
  3. Enhanced power conversion efficiency of dye-sensitized solar cells with multifunctional photoanodes based on a three-dimensional TiO2 nanohelix array
  4. Fabrication and Characteristics of GaN-Based Light-Emitting Diodes with a Reduced Graphene Oxide Current-Spreading Layer
  5. GaInN-based light emitting diodes embedded with wire grid polarizers
  6. Strong correlation between capacitance and breakdown voltage of GaInN/GaN light-emitting diodes
  7. Transient voltage suppressor diode designed for the protection of high-brightness GaN-based LEDs from various electrostatic discharge shocks
  8. Size dependence of silica nanospheres embedded in 385 nm ultraviolet light-emitting diodes on a far-field emission pattern
  9. S6-G4: High injection and efficiency droop in GaInN light-emitting diodes
  10. Fabrication of tapered graded-refractive-index micropillars using ion-implanted-photoresist as an etch mask
  11. GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection
  12. A Universal Method of Producing Transparent Electrodes Using Wide-Bandgap Materials
  13. Analysis of the temperature dependence of the forward voltage characteristics of GaInN light-emitting diodes
  14. Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer
  15. Effect of Quantum Barrier Thickness in the Multiple-Quantum-Well Active Region of GaInN/GaN Light-Emitting Diodes
  16. Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop
  17. Brighter and smarter LEDs via graded refractive indexes
  18. Efficiency droop in light-emitting diodes: Challenges and countermeasures
  19. Enhanced phosphor conversion efficiency of GaN-based white light-emitting diodes having dichroic-filtering contacts
  20. Optically functional surface structures for GaN-based light-emitting diodes
  21. Nanostructured Transparent Conductive Oxides for Photovoltaic Applications
  22. Enhanced broadband and omni-directional performance of polycrystalline Si solar cells by using discrete multilayer antireflection coatings
  23. Method for determining the radiative efficiency of GaInN quantum wells based on the width of efficiency-versus-carrier-concentration curve
  24. Tailored Nanoporous Coatings Fabricated on Conformable Polymer Substrates
  25. Development of large area nanostructure antireflection coatings for EO/IR sensor applications
  26. Analysis of parasitic cyan luminescence occurring in GaInN blue light-emitting diodes
  27. Strong light-extraction enhancement in GaInN light-emitting diodes patterned with TiO2 micro-pillars with tapered sidewalls
  28. Enhanced Omnidirectional Photovoltaic Performance of Solar Cells Using Multiple-Discrete-Layer Tailored- and Low-Refractive Index Anti-Reflection Coatings
  29. Polarized light emission from GaInN light-emitting diodes embedded with subwavelength aluminum wire-grid polarizers
  30. Enhanced light-extraction from a GaN waveguide using micro-pillar TiO2 SiO2 graded-refractive-index layers
  31. Emission pattern control and polarized light emission through patterned graded-refractive-index coatings on GaInN light-emitting diodes
  32. Broadband nanostructured antireflection coating on glass for photovoltaic applications
  33. Experimental and Theoretical Study of the Optical and Electrical Properties of Nanostructured Indium Tin Oxide Fabricated by Oblique-Angle Deposition
  34. Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency
  35. Efficiency droop in AlGaInP and GaInN light-emitting diodes
  36. Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities
  37. Reduction of efficiency droop in GaInN/GaN light-emitting diodes with thick AlGaN cladding layers
  38. Development of nanostructure based antireflection coatings for EO/IR sensor applications
  39. Efficiency Droop in III-Nitride LEDs
  40. Genetic Algorithm for Innovative Device Designs in High-Efficiency III–V Nitride Light-Emitting Diodes
  41. Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes
  42. Internal quantum efficiency in light-emitting diodes based on the width of efficiency-versus-carrier-concentration curve
  43. Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes
  44. Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes
  45. Promotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efficiency droop
  46. High-voltage quantum well waveguide solar cells
  47. Optically functional surface composed of patterned graded-refractive-index coatings to enhance light-extraction of GaInN light-emitting diodes
  48. Effects of the refractive index of the encapsulant on the light-extraction efficiency of light-emitting diodes
  49. Effects of polarization-field tuning in GaInN light-emitting diodes
  50. On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes
  51. High-performance antireflection coatings utilizing nanoporous layers
  52. Electrically conductive thin-film color filters made of single-material indium-tin-oxide
  53. Ultra-high transmittance through nanostructure-coated glass for solar cell applications
  54. Nanostructured Multilayer Tailored-Refractive-Index Antireflection Coating for Glass with Broadband and Omnidirectional Characteristics
  55. Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN
  56. Nanostructre based antireflection coatings for EO/IR sensor applications
  57. On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms
  58. Characteristics of dotlike green satellite emission in GaInN light emitting diodes
  59. Temperature-dependent light-output characteristics of GaInN light-emitting diodes with different dislocation densities
  60. Promises and Challenges in Light-Emitting Diodes for High-Power Lighting Applications
  61. Inductively coupled plasma etching of graded-refractive-index layers of TiO2 and SiO2 using an ITO hard mask
  62. A complementary matching technique to reduce the variance of optical and electrical properties of light-emitting diodes
  63. On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms
  64. Electron-beam excitation
  65. Demonstration of optical interference filters utilizing tunable refractive index layers
  66. Analysis of thermal properties of GaInN light-emitting diodes and laser diodes
  67. Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
  68. Electrical and optical characterization of GaN-based light-emitting diodes fabricated with top-emission and flip-chip structures
  69. Enhancement of photovoltaic cell response due to high-refractive-index encapsulants
  70. Nanostructure-based antireflection coatings for EO/IR sensor applications
  71. Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping
  72. Refractive-Index-Matched Indium–Tin-Oxide Electrodes for Liquid Crystal Displays
  73. Color tunable light-emitting diodes with modified pulse-width modulation
  74. Color rendering ability and luminous efficacy enhancements in white light-emitting diodes
  75. Improved color rendering and luminous efficacy in phosphor-converted white light-emitting diodes by use of dual-blue emitting active regions
  76. Study of UV excited white light-emitting diodes for optimization of luminous efficiency and color rendering index
  77. Improved Emission Efficiency in InGaN Light-Emitting Diodes Using Reverse Bias in Pulsed Voltage Operation
  78. Effects of p-Electrode Reflectivity on Extraction Efficiency of Nitride-Based Light-Emitting Diodes
  79. Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p-contacts
  80. Alternating-current Light Emitting Diodes with a Diode Bridge Circuitry
  81. Enhanced Light Output of GaN-Based Light-Emitting Diodes by Using Omnidirectional Sidewall Reflectors
  82. Consideration of the Actual Current-Spreading Length of GaN-Based Light-Emitting Diodes for High-Efficiency Design
  83. Polarization of light emission by 460nm GaInN∕GaN light-emitting diodes grown on (0001) oriented sapphire substrates
  84. Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry
  85. Enhanced light extraction of GaN-based light-emitting diodes by using textured n-type GaN layers
  86. Measurements of current spreading length and design of GaN-based light emitting diodes
  87. High-Reflectance and Thermally Stable AgCu Alloy p-Type Reflectors for GaN-Based Light-Emitting Diodes
  88. Enhanced light-extraction in GaInN near-ultraviolet light-emitting diode with Al-based omnidirectional reflector having NiZn∕Ag microcontacts
  89. Trapped whispering-gallery optical modes in white light-emitting diode lamps with remote phosphor
  90. GaN light-emitting triodes for high-efficiency hole injection and light emission
  91. GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer
  92. GaN Light-Emitting Triodes for High-Efficiency Hole Injection
  93. Enhancement of light extraction in GaInN light-emitting diodes by conductive omni-directional reflectors
  94. Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns
  95. Light-output enhancement of GaN-based light-emitting diodes by using hole-patterned transparent indium tin oxide electrodes
  96. Recent development of patterned structure light-emitting diodes
  97. Enhancement of light extraction in GaN light-emitting diodes by omni-directional reflectors with ITO nanorod low-refractive-index layer
  98. Improved light extraction efficiency in III-nitride photonic crystal light-emitting diodes
  99. Measuring the junction temperature of III-nitride light emitting diodes using electro-luminescence shift
  100. Analysis of high-power packages for phosphor-based white-light-emitting diodes
  101. Strongly Enhanced Phosphor Efficiency in GaInN White Light-Emitting Diodes Using Remote Phosphor Configuration and Diffuse Reflector Cup
  102. Simulation and fabrication of highly efficient InGaN-based LEDs with corrugated interface substrate
  103. Analysis of high-power packages for white-light-emitting diode lamps with remote phosphor
  104. InGaN/GaN multi-quantum well distributed Bragg reflector laser diode
  105. Extraction efficiency enhancement in GaN-based light emitters grown on a holographically nano-patterned sapphire substrate
  106. High-power packages for phosphor-based white-light-emitting diode lamps