Publication not explained
This publication has not yet been explained in plain language by the author(s). However, you can still read the publication.
If you are one of the authors, claim this publication so you can create a plain language summary to help more people find, understand and use it.
Featured Image
Read the Original
This page is a summary of: GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection, Applied Physics Letters, November 2013, American Institute of Physics,
DOI: 10.1063/1.4829576.
You can read the full text:
Contributors
The following have contributed to this page
