GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection

  • David S. Meyaard, Guan-Bo Lin, Ming Ma, Jaehee Cho, E. Fred Schubert, Sang-Heon Han, Min-Ho Kim, HyunWook Shim, Young Sun Kim
  • Applied Physics Letters, November 2013, American Institute of Physics
  • DOI: 10.1063/1.4829576

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http://dx.doi.org/10.1063/1.4829576

The following have contributed to this page: Professor Jaehee Cho