All Stories

  1. Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties
  2. 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters
  3. Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs
  4. Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors
  5. Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing
  6. First-Principles Study on Photoluminescence Quenching of Divacancy in 4H SiC
  7. Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC
  8. Identification of divacancy and silicon vacancy qubits in 6H-SiC
  9. Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling
  10. Extending coherence time of macro-scale diamond magnetometer by dynamical decoupling with coplanar waveguide resonator
  11. Fabrication of Two-Dimensional Arrays of Fluorescent Centers in Single-Crystalline Diamond Using Particle Beam Writing
  12. Various Single Photon Sources Observed in SiC Pin Diodes
  13. Ab Initio Theory of Si-Vacancy Quantum Bits in 4H and 6H-SiC
  14. Deep Level Defects in 4H-SiC Epitaxial Layers
  15. Low-Parasitic-Capacitance Self-Aligned 4H-SiC nMOSFETs for Harsh Environment Electronics
  16. 4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic Contacts
  17. Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs
  18. Silicon vacancy creation in SiC by proton beam writing
  19. 4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics
  20. Qualification Test Results of IMM Triple-Junction Solar Cells, Space Solar Sheets, and Lightweight&Compact Solar Paddle