All Stories

  1. Nitrogen-vacancy centre formation via local femto-second laser annealing of diamond
  2. Imaging Magnetic Switching in Orthogonally Twisted Stacks of a van der Waals Antiferromagnet
  3. Strong coupling of a superconducting flux qubit to single bismuth donors
  4. Rutherford Backscattering Spectrometry analysis of the formation of superconducting V3
  5. Scalable entanglement of nuclear spins mediated by electron exchange
  6. A review of airborne Doppler lidar for wind-sensing
  7. All‐Optical Electric Field Sensing with Nanodiamond‐Doped Polymer Thin Films
  8. Silicon spin vacuum: Isotopically enriched silicon-on-insulator28 and
  9. Strain-Dependent Photodetection with Layered InSe Photoconductors
  10. Improving the stability of thin polycrystalline silicon passivated contacts using titanium dioxide interlayers
  11. The Nitrogen-Vacancy-Nitrogen Color Center: A Ubiquitous Visible and Near-Infrared-II Quantum Emitter in Nitrogen-Doped Diamond
  12. Long optical and electron spin coherence times for erbium ions in silicon
  13. Photoluminescence Properties of Ion-Implanted Er3+ Defects in 4H-SiCOI for Integrated Quantum Photonics
  14. Electronic Spin Relaxation and Clustering in High-Pressure High-Temperature Synthesized Microcrystalline Diamond Particles with Reduced Nitrogen Content
  15. Radiofrequency Receiver Based on Isotropic Solid-State Spins
  16. Room-Temperature Solid-State Maser Amplifier
  17. Latched detection of zeptojoule spin echoes with a kinetic inductance parametric oscillator
  18. All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide
  19. Room temperature electrical characteristics of gold-hyperdoped silicon
  20. Navigating the 16-dimensional Hilbert space of a high-spin donor qudit with electric and magnetic fields
  21. Hyperfine Spectroscopy and Fast, All-Optical Arbitrary State Initialization and Readout of a Single, Ten-Level Ge
  22. All‐Optical Thermometry with Infrared Emitting Defects in Diamond
  23. Graphene‐Enhanced Single Ion Detectors for Deterministic Near‐Surface Dopant Implantation in Diamond
  24. Charge pumping electrically detected magnetic resonance of silicon carbide power transistors
  25. A solid-state quantum microscope for wavefunction control of an atom-based quantum dot device in silicon
  26. Room Temperature Bias-Selectable, Dual-Band Infrared Detectors Based on Lead Sulfide Colloidal Quantum Dots and Black Phosphorus
  27. Enhanced magnetometry with an electrically detected spin defect ensemble in silicon carbide
  28. Poly-Si passivating contacts prepared via phosphorus spin-on-doping: A comparison between different silicon deposition methods
  29. Nanoscale Mapping of Sub‐Gap Electroluminescence from Step‐Bunched, Oxidized 4H‐SiC Surfaces
  30. A Telecom O-Band Emitter in Diamond
  31. In situ amplification of spin echoes within a kinetic inductance parametric amplifier
  32. An electrically driven single-atom “flip-flop” qubit
  33. Observing Er3+ Sites in Si With an In Situ Si...
  34. Silicon–Aluminum Phase-Transformation-Induced Superconducting Rings
  35. Reproducibility and Gap Control of Superconducting Flux Qubits
  36. Integration of Black Phosphorus Photoconductors with Lithium Niobate on Insulator Photonics
  37. Nanoscale Mapping of Sub‐Gap Electroluminescence from Step‐Bunched, Oxidized 4H‐SiC Surfaces
  38. Spectral Broadening of a Single Er3+ Ion in a
  39. Imaging Current Paths in Silicon Photovoltaic Devices with a Quantum Diamond Microscope
  40. Observing hyperfine interactions of NV− centers in diamond in an advanced quantum teaching lab
  41. Zeeman and hyperfine interactions of a single Er3+167...
  42. Fast Defect Mapping at the SiO<sub>2</sub>/ SiC Interface Using Confocal Photoluminescence
  43. Hydrogen-Terminated Diamond MOSFETs Using Ultrathin Glassy Ga2O3 Dielectric Formed by Low-Temperature Liquid Metal Printing Method
  44. Silicon Carbide Photonics Bridging Quantum Technology
  45. Characterization methods for defects and devices in silicon carbide
  46. Valley population of donor states in highly strained silicon
  47. Single site optical spectroscopy of coupled Er3+ ion pairs in silicon
  48. Creation of nitrogen-vacancy centers in chemical vapor deposition diamond for sensing applications
  49. Proximal nitrogen reduces the fluorescence quantum yield of nitrogen-vacancy centres in diamond
  50. Correction to “Time-Resolved Photoionization Detection of a Single Er3+ Ion in Silicon”
  51. Precision tomography of a three-qubit donor quantum processor in silicon
  52. Time-Resolved Photoionization Detection of a Single Er3+ Ion in Silicon
  53. An integrated widefield probe for practical diamond nitrogen-vacancy microscopy
  54. Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions
  55. Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars
  56. Visible to Short-Wave Infrared Photodetectors Based on ZrGeTe4 van der Waals Materials
  57. Donor-based qubits for quantum computing in silicon
  58. Fluorescent Silicon Carbide Nanoparticles
  59. Ultrashallow Junction Electrodes in Low-Loss Silicon Microring Resonators
  60. Piezoresistance in Defect-Engineered Silicon
  61. Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device
  62. Isotopic enrichment of silicon by high fluence 28Si−...
  63. High-resolution Rutherford backscattering spectrometry with an optimised solid-state detector
  64. Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors
  65. Coherent control of NV− centers in diamond in a quantum teaching lab
  66. Comparison of different methods of nitrogen-vacancy layer formation in diamond for wide-field quantum microscopy
  67. High-resolution spectroscopy of individual erbium ions in strong magnetic fields
  68. Investigation of charge carrier trapping in H-terminated diamond devices
  69. Imaging Domain Reversal in an Ultrathin Van der Waals Ferromagnet
  70. Engineering long spin coherence times of spin–orbit qubits in silicon
  71. Controllable freezing of the nuclear spin bath in a single-atom spin qubit
  72. Epitaxial Formation of SiC on (100) Diamond
  73. Scanned Single-Electron Probe inside a Silicon Electronic Device
  74. Visible and Infrared Photoluminescence in Hexagonal Silicon Carbide by Direct Femtosecond Laser Writing
  75. Toward understanding and optimizing Au-hyperdoped Si infrared photodetectors
  76. Anisotropic three-dimensional weak localization in ultrananocrystalline diamond films with nitrogen inclusions
  77. Near-infrared excitation of nitrogen-doped ultrananocrystalline diamond photoelectrodes in saline solution
  78. Laser Modulation of Superconductivity in a Cryogenic Wide-field Nitrogen-Vacancy Microscope
  79. The effect of nitrogen concentration on quantum sensing with nitrogen-vacancy centres
  80. Process-induced defects in Au-hyperdoped Si photodiodes
  81. Optically Active Defects at the SiC/SiO2 Interface
  82. Thermal evolution of the indentation-induced phases of silicon
  83. Activation and electron spin resonance of near-surface implanted bismuth donors in silicon
  84. Two-dimensional defect mapping of the SiO2/4H−SiC interface
  85. Single Rare-Earth Ions as Atomic-Scale Probes in Ultrascaled Transistors
  86. Microscopic Imaging of the Stress Tensor in Diamond Using in Situ Quantum Sensors
  87. Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices
  88. Low-Temperature Properties of Whispering-Gallery Modes in Isotopically Pure Silicon-28
  89. Giant, Anomalous Piezoimpedance in Silicon-on-insulator
  90. Formation of an r8-Dominant Si Material
  91. Photoluminescence in hexagonal silicon carbide by direct femtosecond laser writing
  92. Isotopically Pure Silcon-28 Whispering Gallery Mode Resonators: A Host for Narrow Linewidth Spin Ensembles
  93. Scalable quantum computing with ion-implanted dopant atoms in silicon
  94. Irradiation-Induced Modification of the Superconducting Properties of Heavily-Boron-Doped Diamond
  95. Deep level transient spectroscopy study of heavy ion implantation induced defects in silicon
  96. Spatial mapping of band bending in semiconductor devices using in situ quantum sensors
  97. Impact of Surface Functionalization on the Quantum Coherence of Nitrogen-Vacancy Centers in Nanodiamonds
  98. Magnetically sensitive nanodiamond-doped tellurite glass fibers
  99. Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si
  100. Thermal stability of simple tetragonal and hexagonal diamond germanium
  101. Silicon vacancy creation in SiC by proton beam writing
  102. Deterministic doping
  103. Fluorescent color centers in laser ablated 4H-SiC nanoparticles
  104. Integration of Single-Photon Emitters into 3C-SiC Microdisk Resonators
  105. A review on single photon sources in silicon carbide
  106. Stimulated emission from nitrogen-vacancy centres in diamond
  107. Nanoscale mapping of the three-dimensional deformation field within commercial nanodiamonds
  108. Deterministic Atom Placement by Ion Implantation: Few and Single Atom Devices for Quantum Computer Technology
  109. Optimisation of sample preparation and analysis conditions for atom probe tomography characterisation of low concentration surface species
  110. Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures
  111. Engineering Single Defects in Silicon Carbide Bulk, Nanostructures and Devices
  112. Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si
  113. Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation
  114. Silicon Carbide for Novel Quantum Technology Devices
  115. Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium
  116. Single-photon emitting diode in silicon carbide
  117. Atom–Photon Coupling from Nitrogen-vacancy Centres Embedded in Tellurite Microspheres
  118. Erbium-doped slot waveguides containing size-controlled silicon nanocrystals
  119. Single crystalline SiGe layers on Si by solid phase epitaxy
  120. Single atom devices by ion implantation
  121. Evidence for global teleconnections in a late Pleistocene speleothem record of water balance and vegetation change at Sudwala Cave, South Africa
  122. Atom-Photon Coupling from Nitrogen-vacancy Centers Embedded in Tellurite Microspheres
  123. Low-Loss Tellurite Fibers With Embedded Nanodiamonds
  124. Solid-Phase Epitaxy
  125. Nanodiamond in tellurite glass Part II: practical nanodiamond-doped fibers
  126. Development Of nanowire devices with quantum functionalities
  127. Optical spectroscopy of erbium doped monocrystalline vanadium dioxide
  128. (Invited) Solid Phase Epitaxy of GeSn Alloys on Silicon and Integration in MOSFET Devices
  129. Characterisation of nickel germanide formed on amorphous and crystalline germanium
  130. Room Temperature Quantum Emission from Cubic Silicon Carbide Nanoparticles
  131. Single photon emission from ZnO nanoparticles
  132. The Study of Morphological Structure and Raman Spectra of 3C-SiC Membranes
  133. In vivo imaging and tracking of individual nanodiamonds in drosophila melanogaster embryos
  134. Optical switching and photoluminescence in erbium-implanted vanadium dioxide thin films
  135. dLow Temperature of formation of Nickel Germanide by reaction of Nickel and Crystalline Germanium
  136. Solid phase epitaxial regrowth of germanium containing nanoporous structures formed by ion implantation
  137. Investigation of amorphisation of germanium using modeling and experimental processes
  138. Fluorescent emission in different silicon carbide polytypes
  139. A silicon carbide room-temperature single-photon source
  140. Silicon carbide: an advanced platform for next generation quantum devices
  141. Very bright, near-infrared single photon emitters in diamond
  142. Quantum Effects in Silicon Carbide Hold Promise for Novel Integrated Devices and Sensors
  143. Detection of atomic spin labels in a lipid bilayer using a single-spin nanodiamond probe
  144. Defect-induced performance degradation of 4H-SiC Schottky barrier diode particle detectors
  145. Hexagonal germanium formed via a pressure-induced phase transformation of amorphous germanium under controlled nanoindentation
  146. Evidence for theR8Phase of Germanium
  147. Defect levels in low-doped 4H-SiC Schottky barrier diodes detected by using alpha particles
  148. Fabrication of single photon centres in silicon carbide
  149. Raman study on the phase transformations of the meta-stable phases of Si induced by indentation
  150. Laser-beam-induced current microscopy of electric fields in natural minerals caused by impurity zonation and structural defects
  151. Fabrication and characterization of PECVD silicon nitride for RF MEMS applications
  152. Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
  153. Dopant effects on solid phase epitaxy in silicon and germanium
  154. Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities
  155. Real-time in situ study of hydrogen diffusion in amorphous Si formed by ion implantation
  156. Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation
  157. Towards hybrid diamond optical devices
  158. Engineering chromium-related single photon emitters in single crystal diamonds
  159. Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon
  160. Advanced germanium devices: The development of materials and processing
  161. Comparison between implanted boron and phosphorus in silicon wafers.
  162. Deep-level transient spectroscopy study of channelled boron implantation in silicon.
  163. Nickel germanide formation via solid phase epitaxial regrowth of amorphous germanium
  164. Photoluminescense of B and P doped Si nanocrystals fabricated by ion implantation
  165. Imaging and Quantum-Efficiency Measurement of Chromium Emitters in Diamond
  166. Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers
  167. Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
  168. Impurity mapping in sulphide minerals using Time-resolved Ion Beam Induced Current imaging
  169. Chromium single-photon emitters in diamond fabricated by ion implantation
  170. Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
  171. Deep level transient spectroscopy study of defects at Si/SiO2 and Si/Si3N4 interfaces
  172. Effect of boron on interstitial-related luminescence centers in silicon
  173. Hydrogen in amorphous Si and Ge during solid phase epitaxy
  174. Single Ion Implantation into Si-Based Devices
  175. Recent Insights In Solid Phase Epitaxy of Silicon and Germanium
  176. Modeling of Hydrogen Diffusion And Segregation in Amorphous Silicon During Solid Phase Epitaxy
  177. Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation
  178. Dopant enhanced H diffusion in amorphous silicon and its effect on the kinetics of solid phase epitaxy
  179. Intrinsic and dopant-enhanced solid-phase epitaxy in amorphous germanium
  180. Dislocation related band-edge photoluminescence in boron-implanted silicon
  181. Dopant-enhanced solid-phase epitaxy in buried amorphous silicon layers
  182. Modeling the effect of hydrogen infiltration on the asymmetry in arsenic-enhanced solid phase epitaxy in silicon
  183. Kinetics of arsenic-enhanced solid phase epitaxy in silicon
  184. Ion-channeling and Raman scattering study of damage accumulation in silicon
  185. Collapse of nanocavities studied by ion-channeling and Raman spectroscopy
  186. Ion channelling and Raman scattering study of self-implanted silicon