All Stories

  1. Erratum: “Temperature dependence of spin dependent recombination in a SiC power device” [Appl. Phys. Lett. 128 , 254002 (2026)]
  2. Temperature dependence of spin-dependent recombination in a SiC power device
  3. Nitrogen-vacancy centre formation via local femto-second laser annealing of diamond
  4. Imaging Magnetic Switching in Orthogonally Twisted Stacks of a van der Waals Antiferromagnet
  5. Strong coupling of a superconducting flux qubit to single bismuth donors
  6. Rutherford Backscattering Spectrometry analysis of the formation of superconducting V3
  7. Scalable entanglement of nuclear spins mediated by electron exchange
  8. A review of airborne Doppler lidar for wind-sensing
  9. All‐Optical Electric Field Sensing with Nanodiamond‐Doped Polymer Thin Films
  10. Silicon spin vacuum: Isotopically enriched silicon-on-insulator28 and
  11. Strain-Dependent Photodetection with Layered InSe Photoconductors
  12. Improving the stability of thin polycrystalline silicon passivated contacts using titanium dioxide interlayers
  13. The Nitrogen-Vacancy-Nitrogen Color Center: A Ubiquitous Visible and Near-Infrared-II Quantum Emitter in Nitrogen-Doped Diamond
  14. Long optical and electron spin coherence times for erbium ions in silicon
  15. Photoluminescence Properties of Ion-Implanted Er3+ Defects in 4H-SiCOI for Integrated Quantum Photonics
  16. Electronic Spin Relaxation and Clustering in High-Pressure High-Temperature Synthesized Microcrystalline Diamond Particles with Reduced Nitrogen Content
  17. Radiofrequency Receiver Based on Isotropic Solid-State Spins
  18. Room-Temperature Solid-State Maser Amplifier
  19. Latched detection of zeptojoule spin echoes with a kinetic inductance parametric oscillator
  20. All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide
  21. Room temperature electrical characteristics of gold-hyperdoped silicon
  22. Navigating the 16-dimensional Hilbert space of a high-spin donor qudit with electric and magnetic fields
  23. Hyperfine Spectroscopy and Fast, All-Optical Arbitrary State Initialization and Readout of a Single, Ten-Level Ge
  24. All‐Optical Thermometry with Infrared Emitting Defects in Diamond
  25. Graphene‐Enhanced Single Ion Detectors for Deterministic Near‐Surface Dopant Implantation in Diamond
  26. Charge pumping electrically detected magnetic resonance of silicon carbide power transistors
  27. A solid-state quantum microscope for wavefunction control of an atom-based quantum dot device in silicon
  28. Room Temperature Bias-Selectable, Dual-Band Infrared Detectors Based on Lead Sulfide Colloidal Quantum Dots and Black Phosphorus
  29. Enhanced magnetometry with an electrically detected spin defect ensemble in silicon carbide
  30. Poly-Si passivating contacts prepared via phosphorus spin-on-doping: A comparison between different silicon deposition methods
  31. Nanoscale Mapping of Sub‐Gap Electroluminescence from Step‐Bunched, Oxidized 4H‐SiC Surfaces
  32. A Telecom O-Band Emitter in Diamond
  33. In situ amplification of spin echoes within a kinetic inductance parametric amplifier
  34. An electrically driven single-atom “flip-flop” qubit
  35. Observing Er3+ Sites in Si With an In Situ Si...
  36. Silicon–Aluminum Phase-Transformation-Induced Superconducting Rings
  37. Reproducibility and Gap Control of Superconducting Flux Qubits
  38. Integration of Black Phosphorus Photoconductors with Lithium Niobate on Insulator Photonics
  39. Nanoscale Mapping of Sub‐Gap Electroluminescence from Step‐Bunched, Oxidized 4H‐SiC Surfaces
  40. Spectral Broadening of a Single Er3+ Ion in a
  41. Imaging Current Paths in Silicon Photovoltaic Devices with a Quantum Diamond Microscope
  42. Observing hyperfine interactions of NV− centers in diamond in an advanced quantum teaching lab
  43. Zeeman and hyperfine interactions of a single Er3+167...
  44. Fast Defect Mapping at the SiO<sub>2</sub>/ SiC Interface Using Confocal Photoluminescence
  45. Hydrogen-Terminated Diamond MOSFETs Using Ultrathin Glassy Ga2O3 Dielectric Formed by Low-Temperature Liquid Metal Printing Method
  46. Silicon Carbide Photonics Bridging Quantum Technology
  47. Characterization methods for defects and devices in silicon carbide
  48. Valley population of donor states in highly strained silicon
  49. Single site optical spectroscopy of coupled Er3+ ion pairs in silicon
  50. Creation of nitrogen-vacancy centers in chemical vapor deposition diamond for sensing applications
  51. Proximal nitrogen reduces the fluorescence quantum yield of nitrogen-vacancy centres in diamond
  52. Correction to “Time-Resolved Photoionization Detection of a Single Er3+ Ion in Silicon”
  53. Precision tomography of a three-qubit donor quantum processor in silicon
  54. Time-Resolved Photoionization Detection of a Single Er3+ Ion in Silicon
  55. An integrated widefield probe for practical diamond nitrogen-vacancy microscopy
  56. Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions
  57. Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars
  58. Visible to Short-Wave Infrared Photodetectors Based on ZrGeTe4 van der Waals Materials
  59. Donor-based qubits for quantum computing in silicon
  60. Fluorescent Silicon Carbide Nanoparticles
  61. Ultrashallow Junction Electrodes in Low-Loss Silicon Microring Resonators
  62. Piezoresistance in Defect-Engineered Silicon
  63. Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device
  64. Isotopic enrichment of silicon by high fluence 28Si−...
  65. High-resolution Rutherford backscattering spectrometry with an optimised solid-state detector
  66. Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors
  67. Coherent control of NV− centers in diamond in a quantum teaching lab
  68. Comparison of different methods of nitrogen-vacancy layer formation in diamond for wide-field quantum microscopy
  69. High-resolution spectroscopy of individual erbium ions in strong magnetic fields
  70. Investigation of charge carrier trapping in H-terminated diamond devices
  71. Imaging Domain Reversal in an Ultrathin Van der Waals Ferromagnet
  72. Engineering long spin coherence times of spin–orbit qubits in silicon
  73. Controllable freezing of the nuclear spin bath in a single-atom spin qubit
  74. Epitaxial Formation of SiC on (100) Diamond
  75. Scanned Single-Electron Probe inside a Silicon Electronic Device
  76. Visible and Infrared Photoluminescence in Hexagonal Silicon Carbide by Direct Femtosecond Laser Writing
  77. Toward understanding and optimizing Au-hyperdoped Si infrared photodetectors
  78. Anisotropic three-dimensional weak localization in ultrananocrystalline diamond films with nitrogen inclusions
  79. Near-infrared excitation of nitrogen-doped ultrananocrystalline diamond photoelectrodes in saline solution
  80. Laser Modulation of Superconductivity in a Cryogenic Wide-field Nitrogen-Vacancy Microscope
  81. The effect of nitrogen concentration on quantum sensing with nitrogen-vacancy centres
  82. Process-induced defects in Au-hyperdoped Si photodiodes
  83. Optically Active Defects at the SiC/SiO2 Interface
  84. Thermal evolution of the indentation-induced phases of silicon
  85. Activation and electron spin resonance of near-surface implanted bismuth donors in silicon
  86. Two-dimensional defect mapping of the SiO2/4H−SiC interface
  87. Single Rare-Earth Ions as Atomic-Scale Probes in Ultrascaled Transistors
  88. Microscopic Imaging of the Stress Tensor in Diamond Using in Situ Quantum Sensors
  89. Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices
  90. Low-Temperature Properties of Whispering-Gallery Modes in Isotopically Pure Silicon-28
  91. Giant, Anomalous Piezoimpedance in Silicon-on-insulator
  92. Formation of an r8-Dominant Si Material
  93. Photoluminescence in hexagonal silicon carbide by direct femtosecond laser writing
  94. Isotopically Pure Silcon-28 Whispering Gallery Mode Resonators: A Host for Narrow Linewidth Spin Ensembles
  95. Scalable quantum computing with ion-implanted dopant atoms in silicon
  96. Irradiation-Induced Modification of the Superconducting Properties of Heavily-Boron-Doped Diamond
  97. Deep level transient spectroscopy study of heavy ion implantation induced defects in silicon
  98. Spatial mapping of band bending in semiconductor devices using in situ quantum sensors
  99. Impact of Surface Functionalization on the Quantum Coherence of Nitrogen-Vacancy Centers in Nanodiamonds
  100. Magnetically sensitive nanodiamond-doped tellurite glass fibers
  101. Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si
  102. Thermal stability of simple tetragonal and hexagonal diamond germanium
  103. Silicon vacancy creation in SiC by proton beam writing
  104. Deterministic doping
  105. Fluorescent color centers in laser ablated 4H-SiC nanoparticles
  106. Integration of Single-Photon Emitters into 3C-SiC Microdisk Resonators
  107. A review on single photon sources in silicon carbide
  108. Stimulated emission from nitrogen-vacancy centres in diamond
  109. Nanoscale mapping of the three-dimensional deformation field within commercial nanodiamonds
  110. Deterministic Atom Placement by Ion Implantation: Few and Single Atom Devices for Quantum Computer Technology
  111. Optimisation of sample preparation and analysis conditions for atom probe tomography characterisation of low concentration surface species
  112. Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures
  113. Engineering Single Defects in Silicon Carbide Bulk, Nanostructures and Devices
  114. Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si
  115. Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation
  116. Silicon Carbide for Novel Quantum Technology Devices
  117. Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium
  118. Single-photon emitting diode in silicon carbide
  119. Atom–Photon Coupling from Nitrogen-vacancy Centres Embedded in Tellurite Microspheres
  120. Erbium-doped slot waveguides containing size-controlled silicon nanocrystals
  121. Single crystalline SiGe layers on Si by solid phase epitaxy
  122. Single atom devices by ion implantation
  123. Evidence for global teleconnections in a late Pleistocene speleothem record of water balance and vegetation change at Sudwala Cave, South Africa
  124. Atom-Photon Coupling from Nitrogen-vacancy Centers Embedded in Tellurite Microspheres
  125. Low-Loss Tellurite Fibers With Embedded Nanodiamonds
  126. Solid-Phase Epitaxy
  127. Nanodiamond in tellurite glass Part II: practical nanodiamond-doped fibers
  128. Development Of nanowire devices with quantum functionalities
  129. Optical spectroscopy of erbium doped monocrystalline vanadium dioxide
  130. (Invited) Solid Phase Epitaxy of GeSn Alloys on Silicon and Integration in MOSFET Devices
  131. Characterisation of nickel germanide formed on amorphous and crystalline germanium
  132. Room Temperature Quantum Emission from Cubic Silicon Carbide Nanoparticles
  133. Single photon emission from ZnO nanoparticles
  134. The Study of Morphological Structure and Raman Spectra of 3C-SiC Membranes
  135. In vivo imaging and tracking of individual nanodiamonds in drosophila melanogaster embryos
  136. Optical switching and photoluminescence in erbium-implanted vanadium dioxide thin films
  137. dLow Temperature of formation of Nickel Germanide by reaction of Nickel and Crystalline Germanium
  138. Solid phase epitaxial regrowth of germanium containing nanoporous structures formed by ion implantation
  139. Investigation of amorphisation of germanium using modeling and experimental processes
  140. Fluorescent emission in different silicon carbide polytypes
  141. A silicon carbide room-temperature single-photon source
  142. Silicon carbide: an advanced platform for next generation quantum devices
  143. Very bright, near-infrared single photon emitters in diamond
  144. Quantum Effects in Silicon Carbide Hold Promise for Novel Integrated Devices and Sensors
  145. Detection of atomic spin labels in a lipid bilayer using a single-spin nanodiamond probe
  146. Defect-induced performance degradation of 4H-SiC Schottky barrier diode particle detectors
  147. Hexagonal germanium formed via a pressure-induced phase transformation of amorphous germanium under controlled nanoindentation
  148. Evidence for theR8Phase of Germanium
  149. Defect levels in low-doped 4H-SiC Schottky barrier diodes detected by using alpha particles
  150. Fabrication of single photon centres in silicon carbide
  151. Raman study on the phase transformations of the meta-stable phases of Si induced by indentation
  152. Laser-beam-induced current microscopy of electric fields in natural minerals caused by impurity zonation and structural defects
  153. Fabrication and characterization of PECVD silicon nitride for RF MEMS applications
  154. Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
  155. Dopant effects on solid phase epitaxy in silicon and germanium
  156. Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities
  157. Real-time in situ study of hydrogen diffusion in amorphous Si formed by ion implantation
  158. Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation
  159. Towards hybrid diamond optical devices
  160. Engineering chromium-related single photon emitters in single crystal diamonds
  161. Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon
  162. Advanced germanium devices: The development of materials and processing
  163. Comparison between implanted boron and phosphorus in silicon wafers.
  164. Deep-level transient spectroscopy study of channelled boron implantation in silicon.
  165. Nickel germanide formation via solid phase epitaxial regrowth of amorphous germanium
  166. Photoluminescense of B and P doped Si nanocrystals fabricated by ion implantation
  167. Imaging and Quantum-Efficiency Measurement of Chromium Emitters in Diamond
  168. Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers
  169. Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
  170. Impurity mapping in sulphide minerals using Time-resolved Ion Beam Induced Current imaging
  171. Chromium single-photon emitters in diamond fabricated by ion implantation
  172. Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
  173. Deep level transient spectroscopy study of defects at Si/SiO2 and Si/Si3N4 interfaces
  174. Effect of boron on interstitial-related luminescence centers in silicon
  175. Hydrogen in amorphous Si and Ge during solid phase epitaxy
  176. Single Ion Implantation into Si-Based Devices
  177. Recent Insights In Solid Phase Epitaxy of Silicon and Germanium
  178. Modeling of Hydrogen Diffusion And Segregation in Amorphous Silicon During Solid Phase Epitaxy
  179. Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation
  180. Dopant enhanced H diffusion in amorphous silicon and its effect on the kinetics of solid phase epitaxy
  181. Intrinsic and dopant-enhanced solid-phase epitaxy in amorphous germanium
  182. Dislocation related band-edge photoluminescence in boron-implanted silicon
  183. Dopant-enhanced solid-phase epitaxy in buried amorphous silicon layers
  184. Modeling the effect of hydrogen infiltration on the asymmetry in arsenic-enhanced solid phase epitaxy in silicon
  185. Kinetics of arsenic-enhanced solid phase epitaxy in silicon
  186. Ion-channeling and Raman scattering study of damage accumulation in silicon
  187. Collapse of nanocavities studied by ion-channeling and Raman spectroscopy
  188. Ion channelling and Raman scattering study of self-implanted silicon