All Stories

  1. Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC
  2. Characterization of Ba-Introduced Thin Gate Oxide on 4H-SiC
  3. 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters
  4. Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs
  5. Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors
  6. Low Resistance Ti5Si3/TiC Ohmic contact on Ion-Implanted n-Type 4H-SiC C Face
  7. Effects of CF4 Surface Etching on 4H-SiC MOS Capacitors
  8. Low-Parasitic-Capacitance Self-Aligned 4H-SiC nMOSFETs for Harsh Environment Electronics
  9. Correlation between Field Effect Mobility and Accumulation Conductance at 4H-SiC MOS Interface with Barium
  10. 4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic Contacts
  11. Low Resistance Ti-Si-C Ohmic Contacts for 4H-SiC Power Devices Using Laser Annealing
  12. 4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics
  13. Enhanced-Oxidation and Interface Modification on 4H-SiC(0001) Substrate Using Alkaline Earth Metal
  14. Low Resistance Ohmic Contact Formation on 4H-SiC C-Face with NbNi Silicidation Using Nanosecond Laser Annealing
  15. 4H-SiC nMOSFETs with As-Doped S/D and NbNi Silicide Ohmic Contacts
  16. 3D Integration of Si-Based Peltier Device onto 4H-SiC Power Device
  17. Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation