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  1. M-center in low-energy electron irradiated 4H-SiC

    Article • Applied Physics Letters, June 2022, American Institute of Physics

    Ivana Capan

  2. Deep Level Defects in 4H-SiC Epitaxial Layers

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Prof. Takeshi Ohshima, Shin-ichiro Sato, Tomislav Brodar, Ivana Capan