All Stories

  1. Deep-level defects in Ga-doped silicon crystals

    Article • January 2023, American Institute of Physics

    Vladimir Markevich

  2. Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer

    Article • Journal of Applied Physics, December 2021, American Institute of Physics

    Vladimir Markevich

  3. Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells

    Article • Journal of Applied Physics, May 2019, American Institute of Physics

    Jose Coutinho, Vladimir Markevich, Matthew Halsall

  4. Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling

    Article • Journal of Applied Physics, December 2018, American Institute of Physics

    Prof. Takeshi Ohshima, Jose Coutinho, Vladimir Markevich

  5. Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques

    Article • Journal of Applied Physics, December 2018, American Institute of Physics

    Vladimir Markevich, Matthew Halsall

  6. Structure, Electronic Properties and Annealing Behavior of Di-Interstitial-Oxygen Center in Silicon

    Article • Solid State Phenomena, October 2015, Trans Tech Publications

    Vladimir Markevich