All Stories

  1. Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells

    Article • Journal of Applied Physics, May 2019, American Institute of Physics

    Jose Coutinho, Vladimir Markevich, Matthew Halsall

  2. Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling

    Article • Journal of Applied Physics, December 2018, American Institute of Physics

    Prof. Takeshi Ohshima, Jose Coutinho, Vladimir Markevich

  3. Atomic and electronic structure of the Si(331)-(12 × 1) surface

    Article • The Journal of Chemical Physics, November 2018, American Institute of Physics

    Jose Coutinho

  4. Electrical Levels and Diffusion Barriers of Early 3d and 4d Transition Metals in Silicon

    Article • Solid State Phenomena, October 2015, Trans Tech Publications

    Jose Coutinho