Silicon vacancy creation in SiC by proton beam writing

What is it about?

Silicon vacancy (Vsi) in SiC is known to act as a single photon source (SPS). In this study, we demonstrated that Vsi can be created at a certain location in SiC with micro meter precision using proton beam writing (PBW) technique.

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Why is it important?

SPS is regarded as an important element for quantum technologies such as quantum sensing, quantum computing etc. Creation of SPSs at a certain location in SiC is very important to develop quantum devices. As a result of this study, we can say that PBW is a useful tool to create Vsi defects in certain locations.

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