All Stories

  1. Demonstration of Quantum Polarized Microscopy Using an Entangled-Photon Source

    Article • Photonics, January 2025, MDPI AG

    Prof. Yasuto YH Hijikata

  2. Thermoelectric measurements of nanomaterials by nanodiamond quantum thermometry

    Article • Applied Physics Express, September 2024, Institute of Physics Publishing

    Prof. Yasuto YH Hijikata

  3. The Influence of Oxygen‐Related Defects on the Formation of In2O3‐Based Low‐Fluorescence Transparent Conducting Film

    Article • phys stat sol (a), May 2023, Wiley

    Prof. Yasuto YH Hijikata

  4. Optically detected magnetic resonance of silicon vacancies in 4H-SiC at elevated temperatures toward magnetic sensing under harsh environments

    Article • Journal of Applied Physics, April 2023, American Institute of Physics

    Shin-ichiro Sato, Prof. Yasuto YH Hijikata

  5. Impact of formation process on the radiation properties of single-photon sources generated on SiC crystal surfaces

    Article • Frontiers in Human Neuroscience, May 2021, American Institute of Physics

    Prof. Yasuto YH Hijikata

  6. Influences of hydrogen ion irradiation on NcVsi − formation in 4H-silicon carbide

    Article • Applied Physics Express, January 2021, Institute of Physics Publishing

    Prof. Yasuto YH Hijikata

  7. Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations

    Article • Frontiers in Human Neuroscience, January 2021, American Institute of Physics

    yuichi yamazaki, Prof. Yasuto YH Hijikata

  8. Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, September 2020, Elsevier

    Prof. Yasuto YH Hijikata

  9. Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC

    Article • Materials Science Forum, July 2020, Trans Tech Publications

    Prof. Yasuto YH Hijikata

  10. Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment

    Article • Materials Science Forum, July 2020, Trans Tech Publications

    Prof. Yasuto YH Hijikata

  11. Near Infrared Photoluminescence of N<sub>C</sub>V<sub>Si</sub><sup>-</sup> Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles

    Article • Materials Science Forum, July 2020, Trans Tech Publications

    Prof. Yasuto YH Hijikata

  12. Optically Detected Magnetic Resonance Study of 3D Arrayed Silicon Vacancies in SiC pn Diodes

    Article • Materials Science Forum, July 2020, Trans Tech Publications

    Prof. Yasuto YH Hijikata

  13. Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties

    Article • Journal of Applied Physics, August 2019, American Institute of Physics

    Shin-ichiro Sato, Prof. Yasuto YH Hijikata, Prof. Takeshi Ohshima

  14. Radiation Response of Negative Gate Biased SiC MOSFETs

    Article • Materials, August 2019, MDPI AG

    Prof. Yasuto YH Hijikata

  15. Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    yuichi yamazaki, Shin-ichiro Sato, Prof. Takeshi Ohshima, Prof. Yasuto YH Hijikata

  16. Macroscopic simulations of the SiC thermal oxidation process based on the Si and C emission model

    Article • Diamond and Related Materials, February 2019, Elsevier

    Prof. Yasuto YH Hijikata

  17. First-principles study of oxygen-related defects on 4H-SiC surface: The effects of surface amorphous structure

    Article • Applied Surface Science, January 2019, Elsevier

    Prof. Yasuto YH Hijikata

  18. Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals

    Article • Journal of Physics Communications, November 2018, Institute of Physics Publishing

    Prof. Yasuto YH Hijikata

  19. Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing

    Article • Journal of Materials Research, September 2018, Cambridge University Press

    yuichi yamazaki, Prof. Yasuto YH Hijikata

  20. Various Single Photon Sources Observed in SiC Pin Diodes

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Prof. Takeshi Ohshima, Prof. Yasuto YH Hijikata, Shin-ichiro Sato, Shinobu Onoda

  21. Room Temperature Electrical Control of Single Photon Sources at 4H-SiC Surface

    Article • ACS Photonics, May 2018, American Chemical Society (ACS)

    Prof. Yasuto YH Hijikata

  22. Generation of stacking faults in 4H-SiC epilayer induced by oxidation

    Article • Materials Research Express, January 2018, Institute of Physics Publishing

    Prof. Yasuto YH Hijikata

  23. Silicon vacancy creation in SiC by proton beam writing

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Prof. Takeshi Ohshima, Prof. Yasuto YH Hijikata, Dr Brett Cameron Johnson, Stefania castelletto

  24. Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide

    Article • Nano Letters, April 2017, American Chemical Society (ACS)

    Prof. Yasuto YH Hijikata

  25. Optimum structures for gamma-ray radiation resistant SiC-MOSFETs

    Article • phys stat sol (a), February 2017, Wiley

    Prof. Yasuto YH Hijikata

  26. Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs

    Article • phys stat sol (a), November 2016, Wiley

    Prof. Yasuto YH Hijikata

  27. Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers

    Article • Superlattices and Microstructures, November 2016, Elsevier

    Prof. Yasuto YH Hijikata

  28. Improvement of radiation response of SiC MOSFETs under high temperature and humidity conditions

    Article • Japanese Journal of Applied Physics, September 2016, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata

  29. Unified theory of silicon carbide oxidation based on the Si and C emission model

    Article • Journal of Physics D Applied Physics, May 2016, Institute of Physics Publishing

    Prof. Yasuto YH Hijikata

  30. WBD power device engineer

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Toru Yoshie, Prof. Yasuto YH Hijikata

  31. Gamma-Ray Irradiation Response of the Motor-Driver Circuit with SiC MOSFETs

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Prof. Yasuto YH Hijikata

  32. Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers

    Article • AIP Advances, December 2015, American Institute of Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  33. Radiation response of silicon carbide metal–oxide–semiconductor transistors in high dose region

    Article • Japanese Journal of Applied Physics, October 2015, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata

  34. Molecular beam epitaxial growth of intermediate-band materials based on GaAs:N δ-doped superlattices

    Article • Japanese Journal of Applied Physics, July 2015, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  35. Control of intermediate-band configuration in GaAs:N δ-doped superlattice

    Article • Japanese Journal of Applied Physics, July 2015, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  36. Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  37. Surface Orientation Dependence of SiC Oxidation Process Studied by In Situ Spectroscopic Ellipsometry

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  38. Recovery of the Electrical Characteristics of SiC MOSFETs Irradiated with Gamma-Rays by Thermal Treatments

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Toru Yoshie

  39. Si and C emission into the oxide layer during the oxidation of silicon carbide and its influence on the oxidation rate

    Article • AIP Advances, June 2015, American Institute of Physics

    Prof. Yasuto YH Hijikata

  40. Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy

    Article • Japanese Journal of Applied Physics, April 2015, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  41. Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry

    Article • Journal of Applied Physics, March 2015, American Institute of Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  42. Enhanced optical absorption due to E + -related band transition in GaAs:N δ-doped superlattices

    Article • Applied Physics Express, September 2014, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  43. Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys

    Article • phys stat sol (a), March 2014, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  44. Si Emission into the Oxide Layer during Oxidation of Silicon Carbide

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  45. Analysis of Electronic Structures of Nitrogen δ-Doped GaAs Superlattices for High Efficiency Intermediate Band Solar Cells

    Article • IEEE Journal of Photovoltaics, October 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  46. Conversion Efficiency of Intermediate Band Solar Cells with GaAs:N δ-Doped Superlattices

    Article • Japanese Journal of Applied Physics, October 2013, Institute of Physics Publishing

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  47. Stacked structure of self-organized cubic InN nano-dots grown by molecular beam epitaxy

    Article • physica status solidi c, September 2013, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  48. Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates

    Article • Journal of Crystal Growth, September 2013, Elsevier

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  49. RF-MBE growth of cubic InN nano-scale dots on cubic GaN

    Article • Journal of Crystal Growth, September 2013, Elsevier

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  50. Optical absorption by E+ miniband of GaAs:N δ-doped superlattices

    Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  51. Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs

    Article • January 2013, American Institute of Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  52. Model Calculations of SiC Oxide Growth Rates at Sub-Atmospheric Pressures Using the Si and C Emission Model

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  53. Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen $\delta$-Doped GaAs

    Article • Applied Physics Express, October 2012, Institute of Physics Publishing

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  54. Nondestructive and Contactless Characterization Method for Spatial Mapping of the Thickness and Electrical Properties in Homo-Epitaxially Grown SiC Epilayers Using Infrared Reflectance Spectroscopy

    Article • October 2012, IntechOpen

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  55. Physics and Technology of Silicon Carbide Devices

    Article • October 2012, IntechOpen

    Prof. Yasuto YH Hijikata

  56. Thermal Oxidation Mechanism of Silicon Carbide

    Article • October 2012, IntechOpen

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  57. Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry

    Article • Journal of Applied Physics, July 2012, American Institute of Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  58. Analysis of the energy structure of nitrogen δ-doped GaAs superlattices for high efficiency intermediate band solar cells

    Article • June 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  59. Micro-Photoluminescence Study on the Influence of Oxidation on Stacking Faults in 4H-SiC Epilayers

    Article • Applied Physics Express, May 2012, Institute of Physics Publishing

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  60. RF-MBE growth of semipolar InN(10-13) and InGaN(10-13) on GaAs(110)

    Article • physica status solidi c, February 2012, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  61. Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide

    Article • Materials Science Forum, January 2012, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  62. Quantum well double barrier resonant tunneling structures for selective contacts of hot carrier solar cells

    Article • June 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  63. Growth Rate Enhancement of Silicon-Carbide Oxidation in Thin Oxide Regime

    Article • April 2011, IntechOpen

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  64. Theoretical Studies for Si and C Emission into SiC Layer during Oxidation

    Article • Materials Science Forum, March 2011, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  65. High Cubic-Phase Purity InN on MgO (001) Using Cubic-Phase GaN as a Buffer Layer

    Article • January 2011, American Institute of Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  66. Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A

    Article • Physica E Low-dimensional Systems and Nanostructures, September 2010, Elsevier

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  67. RF-MBE growth of InN on 4H-SiC (0001) with off-angles

    Article • physica status solidi c, May 2010, Wiley

    Prof. Yasuto YH Hijikata, Yuuki Ishida, Professor Hiroyuki Yaguchi

  68. In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures

    Article • Materials Science Forum, April 2010, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  69. Model Calculations of SiC Oxide Growth Rate at Various Oxidation Temperatures Based on the Silicon and Carbon Emission Model

    Article • Materials Science Forum, April 2010, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  70. Optical and electrical characterizations of 4H-SiC–oxide interfaces by spectroscopic ellipsometry and capacitance–voltage measurements

    Article • Applied Surface Science, July 2009, Elsevier

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  71. Model Calculation of SiC Oxide Growth Rate Based on the Silicon and Carbon Emission Model

    Article • Materials Science Forum, March 2009, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  72. Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry

    Article • Materials Science Forum, March 2009, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  73. Characterization of 4H-SiC–SiO2 Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer

    Article • Materials Science Forum, March 2009, Trans Tech Publications

    Professor Hiroyuki Yaguchi, Prof. Yasuto YH Hijikata

  74. A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon

    Article • Applied Physics Express, February 2009, Institute of Physics Publishing

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  75. Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime

    Article • Japanese Journal of Applied Physics, October 2008, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  76. Improvement of the surface morphology ofa -plane InN using low-temperature InN buffer layers

    Article • physica status solidi c, May 2008, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  77. Photoluminescence of cubic InN films on MgO (001) substrates

    Article • physica status solidi c, May 2008, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  78. Photoluminescence study of hexagonal InN/InGaN quantum well structures grown on 3C-SiC (001) substrates by molecular beam epitaxy

    Article • physica status solidi c, May 2008, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  79. Twin photoluminescence peaks from single isoelectronic traps in nitrogen δ-doped GaAs

    Article • Physica E Low-dimensional Systems and Nanostructures, April 2008, Elsevier

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  80. MOS capacitors obtained by wet oxidation of n-type 4H–SiC pre-implanted with nitrogen

    Article • Microelectronic Engineering, December 2007, Elsevier

    Prof. Yasuto YH Hijikata

  81. Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose

    Article • September 2007, CrossRef Test Account

    Prof. Yasuto YH Hijikata

  82. Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation

    Article • September 2007, CrossRef Test Account

    Prof. Yasuto YH Hijikata

  83. Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy

    Article • September 2007, CrossRef Test Account

    Prof. Yasuto YH Hijikata

  84. Growth Rate Enhancement of (000\bar1)-Face Silicon–Carbide Oxidation in Thin Oxide Regime

    Article • Japanese Journal of Applied Physics, August 2007, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  85. Photoluminescence study of isoelectronic traps in dilute GaAsN alloys

    Article • physica status solidi c, June 2007, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  86. RF-MBE growth of InN/InGaN quantum well structures on 3C–SiC substrates

    Article • Journal of Crystal Growth, April 2007, Elsevier

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  87. RF-MBE growth of a-plane InN on r-plane sapphire with a GaN underlayer

    Article • Journal of Crystal Growth, April 2007, Elsevier

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  88. Micro-Raman study on the improvement of luminescence efficiency of GaAsN alloys

    Article • Journal of Crystal Growth, January 2007, Elsevier

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  89. Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy

    Article • Journal of Crystal Growth, January 2007, Elsevier

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  90. Simultaneous Determination of Carrier Concentration, Mobility, and Thickness of SiC Homoepilayers by Infrared Reflectance Spectroscopy

    Article • Japanese Journal of Applied Physics, November 2006, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  91. Characterization of oxide films on 4H-SiC epitaxial (0001¯) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation

    Article • Journal of Applied Physics, September 2006, American Institute of Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  92. Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloys

    Article • physica status solidi c, June 2006, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  93. RF-MBE growth of cubic InN films on MgO (001) substrates

    Article • physica status solidi c, June 2006, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  94. Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy

    Article • physica status solidi c, May 2005, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  95. Effect of Ar post-oxidation annealing on oxide–4H-SiC interfaces studied by capacitance to voltage measurements and photoemission spectroscopy

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, March 2005, American Vacuum Society

    Prof. Yasuto YH Hijikata, Yuuki Ishida, Professor Hiroyuki Yaguchi

  96. Epitaxial growth of hexagonal and cubic InN films

    Article • physica status solidi (b), October 2004, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  97. Characterization of Carrier Concentration and Mobility in n-type SiC Wafers Using Infrared Reflectance Spectroscopy

    Article • Japanese Journal of Applied Physics, August 2004, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  98. Improvement in the luminescence efficiency of GaAsN alloys by photoexcitation

    Article • physica status solidi c, December 2003, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  99. Spectroscopic ellipsometry study on the dielectric functions of GaPN alloys

    Article • physica status solidi c, December 2003, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  100. Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry

    Article • Materials Science Forum, April 2002, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Yuuki Ishida, Professor Hiroyuki Yaguchi

  101. The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements

    Article • Materials Science Forum, April 2002, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Yuuki Ishida

  102. X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces

    Article • Materials Science Forum, April 2002, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  103. Measurements of the Depth Profile of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry

    Article • Japanese Journal of Applied Physics, February 2002, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Yuuki Ishida, Professor Hiroyuki Yaguchi

  104. Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films

    Article • Applied Surface Science, December 2001, Elsevier

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  105. Photoluminescence Study on Temperature Dependence of Band Gap Energy of GaAsN Alloys

    Article • physica status solidi (b), November 2001, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  106. Spectroscopic Ellipsometry Study on the Electronic Structure near the Absorption Edge of GaAsN Alloys

    Article • physica status solidi (b), November 2001, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  107. Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry

    Article • Japanese Journal of Applied Physics, October 2000, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Yuuki Ishida, Professor Hiroyuki Yaguchi

  108. Pressure Sensitivity of a Fiber-Optic Microprobe for High-Frequency Ultrasonic Field

    Article • Japanese Journal of Applied Physics, May 1999, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata