All Stories

  1. Dynamic modulation of the Fermi energy in suspended graphene backgated devices
  2. Tuning the electronic structure of GeC/WS2 van der Waals heterostructure by electric field and strain: A first principles study
  3. Nonlinear Elasticity Effects in Core-Shell III- N Piezo-Semiconductive Nanowires
  4. Towards a full model of non-linear piezolectricity in ZnO nanowires
  5. Impact of insulator layer thickness on the performance of metal–MgO–ZnO tunneling diodes
  6. stacking of individual graphene layers
  7. Enhanced electromechanical performance in metal–MgO–ZnO tunneling diodes due to the insulator layers
  8. Atomic-scale Authentication with Resonant Tunneling Diodes
  9. Using Quantum Confinement to Uniquely Identify Devices
  10. Atomic-scale insights into 1D and 2D nano-materials
  11. Ripples in Graphene
  12. Ripples, phonons and bandgap in strained graphene
  13. InGaN visible light emitting diodes
  14. Beyond ZnO nanowires for piezotronics and nanogenerators
  15. Are InGaAs and InGaP Nanowires piezoelectric?
  16. 4th Workshop on Theory, Modelling and Computational Methods for Semiconductors (TMCSIV)
  17. A review of non linear piezoelectricity in semiconductors
  18. piezoelectric coefficients of ZnO
  19. Ultimate Empirical Potential for semiconductors?
  20. Non-linear piezoelectricity in zinc blende GaAs and InAs semiconductors
  21. a simple trick to increase LED efficiency
  22. Atomistic modelling of elasticity and phonons in diamond and graphene
  23. effect of pressure on efficiency of Light Emitting Diodes
  24. Non linear piezoelectricity in zincblende GaAs and InAs semiconductors
  25. Strain dependence of internal displacement and effective charge in wurtzite III-N semiconductors
  26. 3rd Workshop on Theory, Modelling and Computational Methods for Semiconductors (TMCSIII)
  27. Empirical interatomic potential for the mechanical, vibrational and thermodynamic properties of semiconductors
  28. Opto-electronics, December 2011, Springer Science + Business Media
  29. Erratum: Second-order piezoelectricity in wurtzite III-N semiconductors [Phys. Rev. B84, 085211 (2011)]
  30. Investigating the effect of non linear piezoelectricity on the excitonic properties of III-N semiconductor quantum dots
  31. Physical Review B, August 2011, American Physical Society (APS)
  32. Control of Strain in GaSbAs/InAs/GaAs Quantum Dots
  33. strain from atomistic simulations
  34. Theory, Modelling and Computational methods for Semiconductors
  35. An ab initio study of electronic and structural properties of Mn in a GaAs environment
  36. How do In/Ga and Sb/As mix in InGaAsSb alloys?
  37. Are piezo coefficients to be considered constants or do they depend on strain?
  38. Strain dependence of piezoelectric coefficients for pseudomorphically grown semiconductors
  39. Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers
  40. Multi Million Atoms Molecular Statics Simulations of Semiconductor Nanostructures
  41. The use of Abell–Tersoff potentials in atomistic simulations of InGaAsSb/GaAs
  42. The use of Abel-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs
  43. Strain dependence of piezoelectric coefficients for pseudomorphically grown semiconductors
  44. Optimized Tersoff potential parameters for tetrahedrally bonded III-V semiconductors
  45. Composition and strain dependence of the piezoelectric coefficients in In x Ga 1 − x As alloys
  46. empirical potential parameterizations for elastic constants and phonons
  47. Exciton fine structure splitting in dot-in-a-well structures
  48. self assembly of quantum dots on semiconductor surfaces
  49. Influence of In composition on the photoluminescence emission of In(Ga)As quantum dot bilayers
  50. are quantum dots structurally asymmetric or is it just the wavefunctions?
  51. Influence of composition on the piezoelectric effect and on the conduction band energy levels of InxGa1−xAs∕GaAs quantum dots
  52. Systematic reduction of the permanent exciton dipole for charged excitons in individual self-assembled InGaAs quantum dots
  53. Stranski-Krastanow transition and epitaxial island growth
  54. Manipulation of the homogeneous linewidth of an individual In(Ga)As quantum dot
  55. Atomistic modelling of strain and polarization charges in quantum dots
  56. Atomistic simulation of strain relaxation inInx
  57. Structural and optical studies of vertically aligned InAs/GaAs self-assembled quantum dots
  58. Epitaxial Island Growth and the Stranski-Krastanow Transition
  59. The Mechanism of the Stranski-Krastanov Transition