All Stories

  1. Dynamic modulation of the Fermi energy in suspended graphene backgated devices

    Article • Science and Technology of Advanced Materials, June 2019, Taylor & Francis

    Professor Mohamed Missous, Dr Max A Migliorato , Omar M. Dawood

  2. Physical device modelling of emitter–base junction of In0.52Al0.48As/In0.53Ga0.47As-based SHBTs

    Article • International Journal of Electronics, April 2019, Taylor & Francis

    Professor Mohamed Missous

  3. A Low-Cost InP-InGaAs PIN-HBT Based OEIC for up to 20Gb/s Optical Communication Systems

    Article • IET Optoelectronics, January 2019, the Institution of Engineering and Technology (the IET)

    Omar Abdulwahid, Professor Mohamed Missous

  4. Physical Modelling of InGaAs-InAlAs APD and PIN Photodetectors for > 25Gb/s Data Rate Applications

    Article • IET Optoelectronics, September 2018, the Institution of Engineering and Technology (the IET)

    Professor Mohamed Missous

  5. Physical modelling and experimental characterisation of InAlAs/InGaAs avalanche photodiode for 10 Gb/s data rates and higher

    Article • IET Optoelectronics, February 2018, the Institution of Engineering and Technology (the IET)

    Professor Mohamed Missous, Omar Abdulwahid

  6. Optimized THz photoconductive devices based on low-temperature grown III-V compound semiconductors incorporating distributed Bragg reflectors

    Article • IET Optoelectronics, November 2016, the Institution of Engineering and Technology (the IET)

    Ioannis Kostakis, Professor Mohamed Missous

  7. Extrinsic and Intrinsic Modeling of InGaAs/InAlAs pHEMT for Wireless Applications

    Article • Applied Mechanics and Materials, November 2015, Trans Tech Publications

    Professor Mohamed Missous, Dr Sohiful Anuar Zainol Murad

  8. The Development of Novel High Speed – Low Noise pHEMT Device for Lossless Underwater Optical Communication

    Article • Applied Mechanics and Materials, November 2015, Trans Tech Publications

    Professor Mohamed Missous

  9. Preface

    Article • Vacuum, October 2015, Elsevier

    Professor Mohamed Missous

  10. Ripples in Graphene

    Article • Carbon, September 2015, Elsevier

    Dr Max A Migliorato , Professor Mohamed Missous, Joydeep Pal

  11. Nanoscale molybdenum gates fabricated by low damage inductively coupled plasma SF6/C4F8 etching suitable for high performance compound semiconductor transistors

    Article • Microelectronic Engineering, June 2015, Elsevier

    Professor Mohamed Missous

  12. Extremely Uniform Tunnel Barriers for Low-Cost Device Manufacture

    Article • IEEE Electron Device Letters, June 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  13. On the Design of Gyroelectric Resonators and Circulators Using a Magnetically Biased 2-D Electron Gas (2-DEG)

    Article • IEEE Transactions on Microwave Theory and Techniques, May 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  14. Highly Sensitive Nanotesla Quantum-Well Hall-Effect Integrated Circuit Using GaAs–InGaAs–AlGaAs 2DEG

    Article • IEEE Sensors Journal, March 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  15. Simulative study on physical modelling of submicrometer highly-strained In0.8Ga0.2As/AlAs resonant tunnelling diode

    Article • October 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  16. A novel photoconductive antenna with a band gap structure for terahertz applications

    Article • September 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  17. Variable temperature photocurrent characterization of quantum dots intermediate band photovoltaic devices

    Article • May 2014, SPIE

    Professor Mohamed Missous

  18. Temperature dependence of InAs/GaAs quantum dots solar photovoltaic devices

    Article • Journal of Semiconductors, May 2014, Institute of Physics Publishing

    Professor Mohamed Missous

  19. Efficient terahertz devices based on III–V semiconductor photoconductors

    Article • IET Optoelectronics, April 2014, the Institution of Engineering and Technology (the IET)

    Ioannis Kostakis, Professor Mohamed Missous

  20. Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices

    Article • IET Optoelectronics, April 2014, the Institution of Engineering and Technology (the IET)

    Professor Mohamed Missous

  21. Thermally stable In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As pHEMTs using thermally evaporated palladium gate metallization

    Article • Semiconductor Science and Technology, January 2014, Institute of Physics Publishing

    Professor Mohamed Missous

  22. On the thermal dependence of the generation of terahertz radiation by photomixing

    Article • Semiconductor Science and Technology, January 2014, Institute of Physics Publishing

    Professor Mohamed Missous

  23. THz devices evaluation in a time domain spectroscopy system at 1.55 μm pulse excitation

    Article • October 2013, SPIE

    Professor Mohamed Missous

  24. Optimization and temperature dependence characteristics of low temperature In0.3Ga0.7As and In0.53Ga0.47As-In0.52Al0.48As semiconductor terahertz photoconductors

    Article • AIP Advances, September 2013, American Institute of Physics

    Ioannis Kostakis, Professor Mohamed Missous

  25. Low temperature performance of pure ternary InAlAs-InGaAs-InAlAs double heterojunction bipolar microwave transistors

    Article • International Journal of Electronics Letters, September 2013, Taylor & Francis

    Professor Mohamed Missous

  26. Silicon Nitride anti-reflective coating for intermediate band InAs/GaAs PV devices

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  27. Compact fiber-coupled THz photoconductive antenna module for 1550nm wavelength range

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  28. Terahertz photoconductive antennas at 800 nm, 1000 nm, and 1550 nm: A performance comparison

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  29. Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks

    Article • Journal of Physics D Applied Physics, July 2013, Institute of Physics Publishing

    Professor Mohamed Missous

  30. Fabrication and characterization of tensile In 0.3 Al 0.7 As barrier and compressive In 0.7 Ga 0.3 As channel pHEMTs having extremely low gate leakage for low-noise applications

    Article • Journal of Physics D Applied Physics, June 2013, Institute of Physics Publishing

    Professor Mohamed Missous

  31. Achieving reproducibility needed for manufacturing semiconductor tunnel devices

    Article • Electronics Letters, May 2013, the Institution of Engineering and Technology (the IET)

    Professor Mohamed Missous

  32. Pulsed THz generation from InAs/GaAs quantum-dot structures

    Article • May 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  33. Ultrafast carrier dynamics of surfactant-mediated-grown InAs/GaAs quantum-dot structures designed for THz applications

    Article • May 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  34. A novel low temperature soft reflow process for the fabrication of deep-submicron (<0.35 μm) T-gate pseudomorphic high electron mobility transistor structures

    Article • Nanotechnology, January 2013, Institute of Physics Publishing

    Professor Mohamed Missous

  35. Semiconductor material development for terahertz applications

    Article • January 2013, Elsevier

    Professor Mohamed Missous

  36. Long Wavelength Low Temperature Grown GaAs and InP-Based Terahertz Photoconductors Devices

    Article • IEEE Sensors Journal, January 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  37. Contributor contact details

    Article • January 2013, Elsevier

    Professor Mohamed Missous

  38. Diamond heat sinking of terahertz antennas for continuous-wave photomixing

    Article • Journal of Applied Physics, December 2012, American Institute of Physics

    Professor Mohamed Missous

  39. Arsenide-based terahertz materials and devices for 800 and 1550 nm excitations

    Article • November 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  40. THz generation and detection using ultrafast, high resistivity III–V semiconductor photoconductors at 1.55 Km pulse excitation

    Article • November 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  41. DC characterization of InGaAs/InAlAs/InP based pseudomorphic HEMT (pHEMT)

    Article • November 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  42. Terahertz Generation and Detection Using Low Temperature Grown InGaAs-InAlAs Photoconductive Antennas at 1.55 $\mu{\hbox{m}}$ Pulse Excitation

    Article • IEEE Transactions on Terahertz Science and Technology, November 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  43. Fabrication of 250-nm T-gate In52Al48As-In70Ga30As pHEMT using a novel solvent reflow technique at room temperature

    Article • November 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  44. Scaling resonant tunnelling diodes and nanowires using SPICE modelling to optimise nanoscale performance

    Article • August 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  45. Thickness control of molecular beam epitaxy grown layers at the 0.01–0.1 monolayer level

    Article • Semiconductor Science and Technology, June 2012, Institute of Physics Publishing

    Professor Mohamed Missous

  46. Characterization of low temperature InGaAs-InAlAs semiconductor photo mixers at 1.55 μm wavelength illumination for terahertz generation and detection

    Article • Journal of Applied Physics, May 2012, American Institute of Physics

    Ioannis Kostakis, Professor Mohamed Missous

  47. RF performance of a novel all ternary InAlAs\InGaAs DHBT

    Article • Semiconductor Science and Technology, March 2012, Institute of Physics Publishing

    Professor Mohamed Missous

  48. L-band low noise amplifier using a novel InGaAs/InAlAs/InP device

    Article • March 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  49. S-band low noise amplifier using 1 μm InGaAs/InAlAs/InP pHEMT

    Article • Journal of Semiconductors, February 2012, Institute of Physics Publishing

    Professor Mohamed Missous

  50. Highly reproducible tunnel currents in MBE-grown semiconductor multilayers

    Article • Electronics Letters, January 2012, the Institution of Engineering and Technology (the IET)

    Professor Mohamed Missous

  51. Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy

    Article • Journal of Nanophotonics, January 2012, SPIE

    Professor Mohamed Missous

  52. Advanced MBE Low temperature grown materials for CW THz generation and detection

    Article • October 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  53. Carrier dynamic measurement of Be doped multi-quantum-well InGaAs-InAlAs material systems at 1550 nm for THz applications

    Article • October 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  54. Temperature and frequency dependent admittance of InAs self-assembled quantum dots embedded in GaAs

    Article • September 2011, SPIE

    Professor Mohamed Missous

  55. A 0.4dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device

    Article • Materials Science in Semiconductor Processing, June 2011, Elsevier

    Professor Mohamed Missous

  56. Elimination of Current Blocking in Ternary InAlAs-InGaAs-InAlAs Double Heterojunction Bipolar Transistors

    Article • IEEE Transactions on Electron Devices, December 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  57. Rapid evaluation of doping-spike carrier concentration levels in millimetre-wave GaAs Gunn diodes with hot-electron injection

    Article • Semiconductor Science and Technology, November 2010, Institute of Physics Publishing

    Professor Mohamed Missous

  58. Time-domain analysis of sub-micron transit region GaAs Gunn diodes for use in terahertz frequency multiplication chains

    Article • October 2010, SPIE

    Professor Mohamed Missous

  59. Development of advanced Gunn diodes and Schottky multipliers for high power THz sources

    Article • October 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  60. Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs

    Article • October 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  61. New InP based pHEMT double stage differential to single-ended MMIC low noise amplifiers for SKA

    Article • October 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  62. Ultra high frequency performance in all ternary In0.52Al0.48As-In0.53Ga0.47As-In0.52Al0.48As DHBT

    Article • October 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  63. Optical and electrical properties of stacked binary InAs-GaAs quantum dot structures prepared under Surfactant-mediated growth conditions

    Article • Journal of Physics Conference Series, September 2010, Institute of Physics Publishing

    Professor Mohamed Missous

  64. Temperature studies of InAlAs–InGaAs–InAlAs double heterojunction bipolar transistors with no current blocking

    Article • Semiconductor Science and Technology, June 2010, Institute of Physics Publishing

    Professor Mohamed Missous

  65. TCAD optimization of field-plated InAlAs-InGaAs HEMTs

    Article • May 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  66. Design of a wideband low noise amplifier for radio-astronomy applications

    Article • Journal of Instrumentation, April 2010, Institute of Physics Publishing

    Professor Mohamed Missous

  67. Small-Signal Modeling of pHEMTs and Analysis of their Microwave Performance

    Article • Journal of Engineering and Applied Sciences, April 2010, Science Alert

    Professor Mohamed Missous

  68. Relation between photocurrent and DLTS signals observed for quantum dot systems

    Article • Physica B Condensed Matter, December 2009, Elsevier

    Professor Mohamed Missous

  69. Advanced Gunn diode as high power terahertz source for a millimetre wave high power multiplier

    Article • September 2009, SPIE

    Professor Mohamed Missous

  70. Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness

    Article • Microelectronics Journal, March 2009, Elsevier

    Professor Mohamed Missous

  71. Interaction of low-temperature surfactant-grown InAs superlattice layers with arsenic precipitates

    Article • Microelectronics Journal, March 2009, Elsevier

    Professor Mohamed Missous

  72. Surfactant-mediated growth of InAs–GaAs superlattices and quantum dot structures grown at different temperatures

    Article • Microelectronics Journal, March 2009, Elsevier

    Professor Mohamed Missous

  73. Advanced step-graded Gunn diode for millimeter-wave imaging applications

    Article • SPIE Newsroom, January 2009, SPIE

    Professor Mohamed Missous

  74. 2-D Physical Modelling of 6-doped GaAs/AlGaAs HEMT

    Article • October 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  75. GHz Class Low-Power Flash ADC for Broadband Communications

    Article • October 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  76. Low power, GHz class ADC for broadband applications

    Article • Materials Science in Semiconductor Processing, October 2008, Elsevier

    Professor Mohamed Missous

  77. Physical Modelling of the Kink Effect in Strained InGaAs/InAlAs pHEMTs

    Article • October 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  78. Sub-0.5 dB NF broadband low-noise amplifier using a novel InGaAs/InAlAs/InP pHEMT

    Article • October 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  79. Two-Dimensional Physical and Numerical Modelling of InP-based Heterojunction Bipolar Transistors

    Article • October 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  80. Design of low leakage InGaAs/InAlAs pHEMTs for wide band (300MHz to 2GHz) LNAs

    Article • October 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  81. Physical Modelling of a Step-Graded AlGaAs/GaAs Gunn Diode and Investigation of Hot Electron Injector Performance

    Article • October 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  82. Modelling and simulation of low-frequency broadband LNA using InGaAs/InAlAs structures: A new approach

    Article • Materials Science in Semiconductor Processing, October 2008, Elsevier

    Professor Mohamed Missous

  83. Very low leakage InGaAs/InAlAs pHEMTs for broadband (300MHz to 2GHz) low-noise applications

    Article • Materials Science in Semiconductor Processing, October 2008, Elsevier

    Professor Mohamed Missous

  84. A ruggedly packaged D-Band GaAs Gunn diode with hot electron injection suitable for volume manufacture

    Article • June 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  85. Electron- and hole-related electrical activity of InAs/GaAs quantum dots

    Article • Physica B Condensed Matter, December 2007, Elsevier

    Professor Mohamed Missous

  86. Left-Handed Metamaterial Coplanar Waveguide Components and Circuits in GaAs MMIC Technology

    Article • IEEE Transactions on Microwave Theory and Techniques, August 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  87. Fully Integrated Broadband CPW Left-Handed Metamaterials Based on GaAs Technology for RF/MMIC Applications

    Article • IEEE Microwave and Wireless Components Letters, August 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  88. Defect investigation of stacked self-assembled InAs/GaAs quantum dot lasers

    Article • physica status solidi c, July 2007, Wiley

    Professor Mohamed Missous

  89. Compact integrated MMIC left-handed bandpass filter

    Article • June 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  90. Ultrafast optical response of InAs quantum dots for photoconductive applications

    Article • May 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  91. Formation and role of defects in stacked large binary InAs/GaAs quantum dot structures

    Article • Semiconductor Science and Technology, December 2006, Institute of Physics Publishing

    Professor Mohamed Missous

  92. Improvements of stacked self-assembled InAs/GaAs quantum dot structures for 1.3μm applications

    Article • Microelectronics Journal, December 2006, Elsevier

    Professor Mohamed Missous

  93. Integrated Left-Handed Metamaterials on MMIC Technology

    Article • September 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  94. Integrated Left-handed Metamaterials for RF/MMIC Miniaturization and Performance Enhancement

    Article • September 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  95. Combined optical and electrical studies of the effects of annealing on the intrinsic states and deep levels in a self-assembled InAs quantum-dot structure

    Article • Journal of Applied Physics, August 2006, American Institute of Physics

    Professor Mohamed Missous

  96. Direct measurement of composition of buried quantum dots using aberration-corrected scanning transmission electron microscopy

    Article • Applied Physics Letters, August 2006, American Institute of Physics

    Professor Mohamed Missous

  97. Carrier emission from the electronic states of self-assembled indium arsenide quantum dots

    Article • Materials Science and Engineering C, July 2006, Elsevier

    Professor Mohamed Missous

  98. Near room temperature operation of a highly strained short wavelength (2.1 µm) AlAs/In 0.84 Ga 0.16 As/AlAs/InAlAs QWIP

    Article • Semiconductor Science and Technology, May 2006, Institute of Physics Publishing

    Professor Mohamed Missous

  99. Ultra thin Ni films on singular and vicinal GaAs substrates

    Article • May 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  100. On-chip photoconductive excitation and detection of pulsed terahertz radiation at cryogenic temperatures

    Article • Applied Physics Letters, April 2006, American Institute of Physics

    Professor Mohamed Missous

  101. Multiple-frequency terahertz pulsed sensing of dielectric films

    Article • Applied Physics Letters, February 2006, American Institute of Physics

    Professor Mohamed Missous

  102. Submicron sensors of local electric field with single-electron resolution at room temperature

    Article • Applied Physics Letters, January 2006, American Institute of Physics

    Professor Mohamed Missous

  103. Compact and Broadband Coplanar Waveguide Left-Handed Metamaterial Transmission Line for RF/ MICC Application

    Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  104. Left-handed metamaterials for RF/MMIC applications

    Article • January 2006, the Institution of Engineering and Technology (the IET)

    Professor Mohamed Missous

  105. Photovoltaic operation up to 270 K of a strain-compensated AlAs∕In0.84Ga0.16As∕AlAs∕InAlAs quantum well infrared photodetector

    Article • Applied Physics Letters, November 2005, American Institute of Physics

    Professor Mohamed Missous

  106. Coexistence of deep levels with optically active InAs quantum dots

    Article • Physical Review B, October 2005, American Physical Society (APS)

    Professor Mohamed Missous

  107. High-Performance InGaP/GaAs HBTs With Compositionally Graded Bases Grown by Solid-Source MBE

    Article • IEEE Transactions on Electron Devices, August 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  108. Multi-channel homodyne detection of continuous-wave terahertz radiation

    Article • Applied Physics Letters, July 2005, American Institute of Physics

    Professor Mohamed Missous

  109. Microwave Detection at 110 GHz by Nanowires with Broken Symmetry

    Article • Nano Letters, July 2005, American Chemical Society (ACS)

    Professor Mohamed Missous

  110. Continuous-wave terahertz system with a 60 dB dynamic range

    Article • Applied Physics Letters, May 2005, American Institute of Physics

    Professor Mohamed Missous

  111. Optimization of photomixers and antennas for continuous-wave terahertz emission

    Article • IEEE Journal of Quantum Electronics, May 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  112. Extraction of temperature and number dependent scattering rates for an AlGaN/GaN 2DEG

    Article • physica status solidi (a), April 2005, Wiley

    Professor Mohamed Missous

  113. Direct demonstration of the ‘virtual gate’ mechanism for current collapse in AlGaN/GaN HFETs

    Article • Solid-State Electronics, February 2005, Elsevier

    Professor Mohamed Missous

  114. Nanometer-scale two-terminal semiconductor memory operating at room temperature

    Article • Applied Physics Letters, January 2005, American Institute of Physics

    Professor Mohamed Missous

  115. Current-voltage and light-current characteristics in highly strained InGaAs∕InAlAs quantum cascade laser structures

    Article • IEE Proceedings - Circuits Devices and Systems, January 2005, the Institution of Engineering and Technology (the IET)

    Professor Mohamed Missous

  116. All-optoelectronic terahertz system using low-temperature-grown InGaAs photomixers

    Article • Optics Express, January 2005, Optical Society of America (OSA)

    Professor Mohamed Missous

  117. Room-temperature operations of memory devices based on self-assembled InAs quantum dot structures

    Article • Applied Physics Letters, December 2004, American Institute of Physics

    Professor Mohamed Missous

  118. Highly resistive annealed low-temperature-grown InGaAs with sub-500fs carrier lifetimes

    Article • Applied Physics Letters, November 2004, American Institute of Physics

    Professor Mohamed Missous

  119. Intersubband absorption from 2 to 7 µm in strain-compensated double-barrier In x Ga 1  x As multiquantum wells

    Article • Semiconductor Science and Technology, September 2004, Institute of Physics Publishing

    Professor Mohamed Missous

  120. Resonant dipole antennas for continuous-wave terahertz photomixers

    Article • Applied Physics Letters, August 2004, American Institute of Physics

    Professor Mohamed Missous

  121. Analysis of thin AlN carrier exclusion layers in AlGaN/GaN microwave heterojunction field-effect transistors

    Article • Semiconductor Science and Technology, April 2004, Institute of Physics Publishing

    Professor Mohamed Missous, Dr Adrian Wells

  122. Continuous-wave terahertz imaging using diode lasers

    Article • April 2004, SPIE

    Professor Mohamed Missous

  123. Diode-like characteristics of nanometer-scale semiconductor channels with a broken symmetry

    Article • Physica E Low-dimensional Systems and Nanostructures, March 2004, Elsevier

    Professor Mohamed Missous

  124. METALLIC AND SEMICONDUCTOR HALL MICROPROBES FOR WIDE TEMPERATURE RANGE APPLICATIONS

    Article • International Journal of Nanoscience, February 2004, World Scientific Pub Co Pte Lt

    Professor Mohamed Missous

  125. Subband nonparabolicity estimated from multiple intersubband absorption in highly doped multiple quantum wells

    Article • Physical Review B, January 2004, American Physical Society (APS)

    Professor Mohamed Missous

  126. Phase sensitive continuous-wave THz imaging using diode lasers

    Article • Electronics Letters, January 2004, the Institution of Engineering and Technology (the IET)

    Professor Mohamed Missous

  127. Highly strained layers for short wavelength QWIP and QCL structures grown by MBE

    Article • Physica E Low-dimensional Systems and Nanostructures, January 2004, Elsevier

    Professor Mohamed Missous

  128. AlGaN/GaN microwave HFET including a thin AlN carrier exclusion layer

    Article • physica status solidi c, December 2003, Wiley

    Professor Mohamed Missous

  129. Terahertz pulsed imaging with 1.06 μm laser excitation

    Article • Applied Physics Letters, November 2003, American Institute of Physics

    Professor Mohamed Missous

  130. High resistivity annealed low-temperature GaAs with 100 fs lifetimes

    Article • Applied Physics Letters, November 2003, American Institute of Physics

    Professor Mohamed Missous

  131. Scanning tunnelling microscope imaging of nanoscale electron density gradients on the surface of GaAs

    Article • Journal of Physics Condensed Matter, October 2003, Institute of Physics Publishing

    Professor Mohamed Missous

  132. Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device

    Article • Applied Physics Letters, September 2003, American Institute of Physics

    Professor Mohamed Missous

  133. Submicron probes for Hall magnetometry over the extended temperature range from helium to room temperature

    Article • Journal of Applied Physics, June 2003, American Institute of Physics

    Professor Mohamed Missous

  134. Intersubband absorption in strain-compensated InAlAs/AlAs/InxGa(1−x)As (x∼0.8) quantum wells grown on InP

    Article • Journal of Applied Physics, May 2003, American Institute of Physics

    Professor Mohamed Missous

  135. Observation of intersubband absorption in the forbidden polarisation for a stepped double barrier quantum well

    Article • IEE Proceedings - Optoelectronics, January 2003, the Institution of Engineering and Technology (the IET)

    Professor Mohamed Missous

  136. Channel Mobility in AlGaN/GaN HFETs on SiC and Sapphire Substrates

    Article • phys stat sol (a), December 2002, Wiley

    Professor Mohamed Missous

  137. Intersubband transitions in proton irradiated In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on semi-insulating InP substrate

    Article • Applied Physics Letters, October 2002, American Institute of Physics

    Professor Mohamed Missous

  138. Ex situ re-calibration method for low-cost precision epitaxial growth of heterostructure devices

    Article • Semiconductor Science and Technology, January 2002, Institute of Physics Publishing

    Professor Mohamed Missous

  139. Enhanced intersubband absorption in stepped double barrier quantum wells

    Article • Electronics Letters, January 2002, the Institution of Engineering and Technology (the IET)

    Professor Mohamed Missous

  140. Intersubband Transitions in Proton Irradiated InGaAs/InAlAs Multiple Quantum Wells Grown on Lattice Matched InP Substrate

    Article • MRS Proceedings, January 2002, Cambridge University Press

    Professor Mohamed Missous

  141. Precision growth for the manufacture of semiconductor heterostructure devices

    Article • Semiconductor Science and Technology, June 2001, Institute of Physics Publishing

    Professor Mohamed Missous

  142. Intersubband Transitions In Ingaas/Inalas Multiple Quantum Wells Grown On Inp Substrate

    Article • MRS Proceedings, January 2001, Cambridge University Press

    Professor Mohamed Missous

  143. An inter-subband device with terahertz applications

    Article • IEEE Transactions on Microwave Theory and Techniques, April 2000, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  144. Temperature characteristics of near-infrared (1.7 micron), resonant cavity light-emitting diodes

    Article • IEE Proceedings - Optoelectronics, February 2000, the Institution of Engineering and Technology (the IET)

    Professor Mohamed Missous

  145. Effects of high index plane on device performances of near-infrared InGaAs/GaAs/AlGaAs resonant-cavity light-emitting diodes

    Article • IEE Proceedings - Optoelectronics, February 2000, the Institution of Engineering and Technology (the IET)

    Professor Mohamed Missous

  146. Defects in GaAs grown by molecular-beam epitaxy at low temperatures: stoichiometry, doping, and deactivation of n-type conductivity

    Article • Journal of Applied Physics, August 1999, American Institute of Physics

    Professor Mohamed Missous

  147. Positron beam study of low-temperature-grown GaAs with aluminum delta layers

    Article • Applied Surface Science, August 1999, Elsevier

    Professor Mohamed Missous

  148. The growth of epitaxial aluminium on As containing compound semiconductors

    Article • Journal of Crystal Growth, January 1999, Elsevier

    Professor Mohamed Missous

  149. A study of the vacancy-defect distribution in a GaAs/AlxGa1−xAs multi-layer structure grown at low temperature

    Article • Journal of Crystal Growth, January 1999, Elsevier

    Professor Mohamed Missous

  150. An electrical and optical study of electrons in triple barrier structures

    Article • Physica E Low-dimensional Systems and Nanostructures, July 1998, Elsevier

    Professor Mohamed Missous

  151. Thermal stability of Cr-Ni-Co alloy Schottky contacts on MBE -GaAs

    Article • Semiconductor Science and Technology, July 1998, Institute of Physics Publishing

    Professor Mohamed Missous

  152. Thermal stability of epitaxial aluminum on In0.53Al0.47As Schottky diodes grown by molecular beam epitaxy

    Article • Journal of Applied Physics, May 1998, American Institute of Physics

    Professor Mohamed Missous

  153. Charge accumulation in GaAs/AlGaAs triple barrier resonant tunneling structures

    Article • Journal of Applied Physics, January 1998, American Institute of Physics

    Professor Mohamed Missous

  154. Infrared photoreflectance of InAs

    Article • Semiconductor Science and Technology, December 1997, Institute of Physics Publishing

    Professor Mohamed Missous

  155. Strained GaInAs quantum well mid-IR emitters

    Article • IEE Proceedings - Optoelectronics, October 1997, the Institution of Engineering and Technology (the IET)

    Professor Mohamed Missous

  156. The effect of substrate orientation on the properties of low temperature molecular beam epitaxial GaAs

    Article • Journal of Applied Physics, September 1997, American Institute of Physics

    Professor Mohamed Missous

  157. InGaP/InGaAs/GaAs High Electron Mobility Transistor Structure Grown by Solid Source Molecular Beam Epitaxy Using GaP as Phosphorous Source

    Article • Japanese Journal of Applied Physics, June 1997, Japan Society of Applied Physics

    Professor Mohamed Missous

  158. Full wafer optical characterisation of resonant tunnelling structures using photoluminescence excitation spectroscopy

    Article • Journal of Crystal Growth, May 1997, Elsevier

    Professor Mohamed Missous

  159. Low temperature (LT) and stoichiometric low temperature (SLT) MBE GaAs and related compounds: improved structural, electrical and optical properties

    Article • Journal of Crystal Growth, May 1997, Elsevier

    Professor Mohamed Missous

  160. Fundamental issues of device-relevant low temperature GaAs and related materials properties

    Article • Materials Science and Engineering B, February 1997, Elsevier

    Professor Mohamed Missous

  161. γ-Ray Irradiation Effect on the Intersubband Transition in Ingaas/Aigaas Multiple Quantum Wells

    Article • MRS Proceedings, January 1997, Cambridge University Press

    Professor Mohamed Missous

  162. Structural and defect characterization of GaAs and AlxGa1−xAs grown at low temperature by molecular beam epitaxy

    Article • Journal of Applied Physics, January 1997, American Institute of Physics

    Professor Mohamed Missous

  163. A General Approach to Measurement of Band Offsets of Near-GaAs Alloys

    Article • physica status solidi (b), November 1996, Wiley

    Professor Mohamed Missous

  164. Stoichiometric low temperature (SLT) GaAs and AlGaAs grown by molecular beam epitaxy

    Article • Microelectronics Journal, July 1996, Elsevier

    Professor Mohamed Missous

  165. Interaction of dopants with a host GaAs lattice: The case of low‐temperature grown molecular beam epitaxial GaAs(Si)

    Article • Journal of Applied Physics, June 1996, American Institute of Physics

    Professor Mohamed Missous

  166. Properties of High Quality InP Epilayers Grown by Solid Source Molecular Beam Epitaxy using Polycrystalline GaP as a Phosphorous Source

    Article • Japanese Journal of Applied Physics, April 1996, Japan Society of Applied Physics

    Professor Mohamed Missous

  167. New donor doping sources for molecular beam epitaxy of AlGaSb and AlGaAs

    Article • Materials Science and Technology, February 1996, Taylor & Francis

    Professor Mohamed Missous

  168. Stoichiometric low‐temperature GaAs and AlGaAs: A reflection high‐energy electron‐diffraction study

    Article • Journal of Applied Physics, October 1995, American Institute of Physics

    Professor Mohamed Missous

  169. A multi-stack quantum barrier varactor on InP for MM-wave frequency tripling

    Article • October 1995, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  170. Thermal behaviour of aluminium films grown by molecular beam epitaxy on GaAs

    Article • Journal of Crystal Growth, September 1995, Elsevier

    Professor Mohamed Missous

  171. Structure of theDXstate formed by donors in (Al,Ga)As and Ga(As,P)

    Article • Journal of Applied Physics, August 1995, American Institute of Physics

    Professor Mohamed Missous

  172. Native defects in low‐temperature GaAs and the effect of hydrogenation

    Article • Journal of Applied Physics, August 1995, American Institute of Physics

    Professor Mohamed Missous

  173. The use of Ga 2 Se 3 and Ga 2 S 3 as donor doping sources for MBE-grown Al x Ga 1-x Sb and Al x Ga 1-x As

    Article • Semiconductor Science and Technology, April 1995, Institute of Physics Publishing

    Professor Mohamed Missous

  174. Native Defects in Low Temperature GaAs and the Effect of Hydrogenation

    Article • MRS Proceedings, January 1995, Cambridge University Press

    Professor Mohamed Missous

  175. A W-band medium power multi-stack quantum barrier varactor frequency tripler

    Article • IEEE Microwave and Guided Wave Letters, January 1995, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  176. Stacked Heterostructure Barrier Varactors on InP for Millimeter Wave Triplers

    Article • October 1994, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  177. Effect of As4/Ga flux ratio on electrical and optical properties of low‐temperature GaAs grown by molecular beam epitaxy

    Article • Journal of Applied Physics, June 1994, American Institute of Physics

    Professor Mohamed Missous

  178. Nonstoichiometry and dopants related phenomena in low temperature GaAs grown by molecular beam epitaxy

    Article • Journal of Applied Physics, April 1994, American Institute of Physics

    Professor Mohamed Missous

  179. Dopant and As4/Ga Flux Ratio Influence on the Electrical and Structural Properties of LT GaAs

    Article • MRS Proceedings, January 1994, Cambridge University Press

    Professor Mohamed Missous

  180. Gallium vacancy related defects in silicon doped GaAs grown at low temperatures

    Article • Materials Science and Engineering B, December 1993, Elsevier

    Professor Mohamed Missous

  181. On the Richardson constant of intimate metal‐GaAs (111)BSchottky diodes grown by molecular beam epitaxy

    Article • Journal of Applied Physics, November 1993, American Institute of Physics

    Professor Mohamed Missous

  182. Very low resistance non-alloyed and in situ ohmic contacts to n-GaAs using delta -doped surface layers

    Article • Semiconductor Science and Technology, October 1993, Institute of Physics Publishing

    Professor Mohamed Missous

  183. Temperature dependence of the Schottky barrier in Al/AlGaAs metal‐semiconductor junctions

    Article • Journal of Applied Physics, July 1993, American Institute of Physics

    Professor Mohamed Missous

  184. Magneto‐optics of excitons in a center Si δ‐doped GaAs/AlGaAs quantum well

    Article • Journal of Applied Physics, June 1993, American Institute of Physics

    Professor Mohamed Missous

  185. Correlation between optical spectroscopy and capacitance‐voltage profile simulation applied to interface states in multilayer GaAs/AlGaAs heterostructures

    Article • Journal of Applied Physics, May 1993, American Institute of Physics

    Professor Mohamed Missous

  186. Heavily Si or Be doped MBE GaAs grown at low temperatures

    Article • Journal of Crystal Growth, February 1993, Elsevier

    Professor Mohamed Missous

  187. Stoichiometry Related Phenomena in Low Temperature Grown GaAs

    Article • MRS Proceedings, January 1993, Cambridge University Press

    Professor Mohamed Missous

  188. Gallium vacancy related defects in silicon doped GaAs grown at low temperatures

    Article • January 1993, Elsevier

    Professor Mohamed Missous

  189. Evidence for donor‐gallium vacancy pairs in silicon doped GaAs grown by molecular beam epitaxy at low temperatures

    Article • Applied Physics Letters, December 1992, American Institute of Physics

    Professor Mohamed Missous

  190. Hole capture at theDX(Si) andDX(Te) defects in AlxGa1−xAs

    Article • Journal of Applied Physics, October 1992, American Institute of Physics

    Professor Mohamed Missous

  191. Radiative transitions associated with hole confinement at Si δ-doped planes in GaAs

    Article • June 1992, American Physical Society (APS)

    Professor Mohamed Missous

  192. Evidence for substitutional-interstitial defect motion leading to DX behavior by donors in Al x Ga 1 − x As

    Article • Physical Review Letters, April 1992, American Physical Society (APS)

    Professor Mohamed Missous

  193. Observation of persistent photoconductivity in delta -doped GaAs

    Article • Semiconductor Science and Technology, April 1992, Institute of Physics Publishing

    Professor Mohamed Missous

  194. On the Richardson constant of intimate metal-GaAs Schottky barriers

    Article • Semiconductor Science and Technology, February 1992, Institute of Physics Publishing

    Professor Mohamed Missous

  195. Manifestation of the DX Centre in Heavily δ-Doped GaAs(Si)

    Article • MRS Proceedings, January 1992, Cambridge University Press

    Professor Mohamed Missous

  196. Influence of defects upon the forward bias admittance of metal-semiconductor interfaces

    Article • Applied Surface Science, January 1992, Elsevier

    Professor Mohamed Missous

  197. Optical properties of GaAs Si δ-doped superlattices

    Article • Surface Science, January 1992, Elsevier

    Professor Mohamed Missous

  198. Uniformity of improved high-quality GaAs and AlGaAs epilayers and Schottky barriers prepared by molecular beam epitaxy

    Article • Semiconductor Science and Technology, January 1992, Institute of Physics Publishing

    Professor Mohamed Missous

  199. Laplace Transform DLTS Studies of the DX Centers in GaSb and AlGaAs

    Article • Materials Science Forum, January 1992, Trans Tech Publications

    Professor Mohamed Missous

  200. Minority-carrier confinement by doping barriers

    Article • Materials Science and Engineering B, July 1991, Elsevier

    Professor Mohamed Missous

  201. A new, fast method for the computer simulation of CV profiles in multilayer structures

    Article • Applied Surface Science, June 1991, Elsevier

    Professor Mohamed Missous

  202. On the Richardson constant for aluminum/gallium arsenide Schottky diodes

    Article • Journal of Applied Physics, May 1991, American Institute of Physics

    Professor Mohamed Missous

  203. Comprehensive analysis of epitaxial Al/AlxGa1−xAs Schottky barriers made by MBE: barrier heights and band edge discontinuities

    Article • Journal of Crystal Growth, May 1991, Elsevier

    Professor Mohamed Missous

  204. Admittance of Al/GaAs Schottky contacts under forward bias as a function of interface preparation conditions

    Article • Applied Physics Letters, January 1991, American Institute of Physics

    Professor Mohamed Missous

  205. Insitu, near‐ideal epitaxial Al/AlxGa1−xAs Schottky barriers formed by molecular beam epitaxy

    Article • Journal of Applied Physics, September 1990, American Institute of Physics

    Professor Mohamed Missous

  206. A Novel Approach to the Assessment of Semiconductor Hetero-Interfaces in Multilayer Structures

    Article • MRS Proceedings, January 1990, Cambridge University Press

    Professor Mohamed Missous

  207. Electron diffraction from epitaxial crystals—a convergent-beam electron diffraction of the interface structure for NiSi2/Si and Al/GaAs

    Article • Philosophical Magazine A, August 1989, Taylor & Francis

    Professor Mohamed Missous

  208. In situ Schottky contacts to molecular‐beam epitaxially grown gallium antimonide

    Article • Journal of Applied Physics, November 1987, American Institute of Physics

    Professor Mohamed Missous

  209. Low‐temperature molecular beam epitaxy of gallium arsenide

    Article • Applied Physics Letters, March 1987, American Institute of Physics

    Professor Mohamed Missous

  210. Electrical properties of indium doped GaAs layers grown by MBE

    Article • Journal of Crystal Growth, February 1987, Elsevier

    Professor Mohamed Missous

  211. The effects of vacuum conditions on epitaxial Al/GaAs contacts formed by molecular‐beam epitaxy

    Article • Journal of Applied Physics, October 1986, American Institute of Physics

    Professor Mohamed Missous

  212. Thermal stability of epitaxial Al/GaAs Schottky barriers prepared by molecular‐beam epitaxy

    Article • Journal of Applied Physics, May 1986, American Institute of Physics

    Professor Mohamed Missous

  213. New way of plotting current/voltage characteristics of Schottky diodes

    Article • Electronics Letters, January 1986, the Institution of Engineering and Technology (the IET)

    Professor Mohamed Missous

  214. Schottky barriers on p-type gallium arsenide prepared by molecular beam epitaxy

    Article • Electronics Letters, January 1986, the Institution of Engineering and Technology (the IET)

    Professor Mohamed Missous

  215. A simple method of modelling the C-tV profiles of high-low junctions and heterojunctions

    Article • Solid-State Electronics, March 1985, Elsevier

    Professor Mohamed Missous

  216. InGaP/InGaAs/GaAs pseudomorphic HEMT grown by solid source MBE

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  217. QWIP Detectors for the MWIR

    Article • Springer Science + Business Media

    Professor Mohamed Missous

  218. An inter-subband device with THz applications

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  219. InAlAs/InGaAs strain compensated quantum cascade structures for short wavelength infra-red emission

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  220. Positron studies of arsenic precipitation in low-temperature GaAs grown by molecular beam epitaxy

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  221. Terahertz detection using photon-assisted tunnelling in triple-barrier quantum well structures

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  222. Design of a portable, two dimensional magnetometer, using 2 dimensional quantum Hall effect sensor array, optimised for low magnetic field applications

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  223. Low magnetic field mapping using an InGaAs-AlGaAs-GaAs 2 DEG Hall sensor

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  224. High-gain InGaP/GaAs HBTs with compositionally graded In/sub x/Ga/sub 1-x/As bases grown by molecular beam epitaxy

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  225. Annealing experiments on InP/InGaAs single and double HBTs grown by molecular beam epitaxy

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  226. Coplanar waveguide design for a compact, low-cost, THz frequency source

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  227. Continuous wave terahertz photomixing in low-temperature InGaAs

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  228. A high performance CW-THz photomixing imaging system

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  229. Optical and electrical properties of In/sub .48/(Al/sub x/Ga/sub (1-x)/)/sub .52/P grown by solid source MBE using a GaP decomposition source

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  230. The role of stoichiometry in low temperature grown GaAs for MESFET structures

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  231. Fabrication and characterisation of AlGaAs/InGaAs/GaAs pseudomorphic HEMT with in-situ epitaxial aluminium grown by MBE

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  232. Low resistance ohmic contacts to millimetre-wave graded gap Gunn diode oscillators

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  233. Pulsed THz sensing of dielectric thin films using cascaded filter arrays

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  234. Design and fabrication of SiO/sub 2//TiO/sub 2/ dielectric Bragg reflectors by RF sputtering: application to near infrared InGaAs/GaAs/AlGaAs vertical cavity surface emitting laser

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  235. Multicolour infrared detection with In/sub 0.1/Ga/sub 0.9/As/Al/sub 0.33/Ga/sub 0.67/As double and triple-coupled quantum well infrared photodetectors

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous

  236. Material characterization of highly strained and partially strain compensated In/sub x/Ga/sub 1-x/As/In/sub y/Al/sub 1-y/A/sub s/ quantum cascade light emitting diodes grown by MBE for emission in the near infrared (2-4 μm)

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Mohamed Missous