All Stories

  1. First-principles insights into WS2/4H-SiC heterostructure
  2. NiCo/β-Ga2O3 Schottky detectors for solar-blind UV responses and X-ray imaging
  3. Interface-Engineered Ultrawide-Bandgap TiN/β-Ga2O3 Schottky Diodes for X-ray Detections
  4. Ni/4H-SiC Schottky Interfaces for X-ray Detection and Imaging in Extreme Environments
  5. Interface engineering of 4H-SiC-based UV photodetectors
  6. Computational modelling and simulations on MoS2/MoSe2 core-shell nanowire with DFT calculations
  7. Computational modelling and simulations of PbS2 with CASTEP
  8. Computational modelling and predictions in Machinawite FeS and FeSe
  9. The exploration of electronic and phonon properties in PbO2 using the density functional theory
  10. Exploring ground state properties in carbon-based IV compounds (Ge, Sn) with DFT
  11. The structural, electronic, optical, elastic, and vibrational properties of GeS2 using HSE03
  12. The computational ground-state predictions of hafnium-based compound using DFT
  13. The structural, electronic, optical, and mechanical properties of one-dimensional nanotube-like Bi
  14. Computational modelling and Simulations of quasi-one-dimensional molybdenum sesquisulphide
  15. Exploration of ground state carbon-based halides properties: an ab. initio approach
  16. Computational preductions of ZrCl4 with density functional theory
  17. The structural, electronic, optical, mechanical and vibrational properties of Te2W with HSE03
  18. Computational modeling and predictions of CeO2 with DFT calculations
  19. Computational modelling and DFT simulations of AgNO3 compound
  20. Computational Predictions on TiS3 material with density functional theory
  21. Computational Simulations on Cuprous iodide (CuI) compound
  22. Computational calculations on Ag3X (X=S , Se) with ab. initio. methods
  23. Computational Predictions on Compound Sb2Se3
  24. Computational predictions on WO3
  25. Computational predictions on Boron oxide B2O3
  26. The DFT calculations of bulk and Te-doped SnSe2
  27. Computational predictions on Sn-doped Ga2O3 using density functional theory
  28. Computational predictions and descriptions on SnO materials.
  29. Computational predictions on Ga2O3
  30. Computational predictions on Arsenic-Selenium alloy compound
  31. Computational predictions of two-dimensional graphene-like GaN with density functional theory
  32. hexagonal h-ZnS with density functional theory
  33. The electronic and optical properties of SiO2–Al–SiO2 with density functional theory
  34. The optical and elastic properties of strained ZnO by first principle calculations
  35. Materials Research Express, October 2019, Institute of Physics Publishing
  36. The First Principle Study: Structural, Electronic, Optical, Phonon and Elastic Properties in Bulk and Monolayer Molybdenum Ditelluride
  37. The Structural, Electronic, Optical and Elastic Properties of ε-Type Gallium Selenide: A First Principle Study
  38. The electronic and structural properties in Ca2TiMnO6 double perovskite: The first principle study
  39. First Principle Study: Electronic Properties of Graphene on Boron Phosphide
  40. The bandgap distribution investigated across the strain-induced bending ZnO nanowire
  41. The first principle study of electronic and optical properties in rhombohedral BiAlO 3
  42. The first principle study: Electronic and optical properties in Bi2Se3
  43. Are InGaAs and InGaP Nanowires piezoelectric?
  44. Graphene/GaN diodes for ultraviolet and visible photodetectors
  45. Tunable band gap in germanene by surface adsorption
  46. Non-linear piezoelectricity in zinc blende GaAs and InAs semiconductors
  47. Non linear piezoelectricity in zincblende GaAs and InAs semiconductors
  48. Strain dependence of internal displacement and effective charge in wurtzite III-N semiconductors
  49. Opto-electronics, December 2011, Springer Science + Business Media
  50. Erratum: Second-order piezoelectricity in wurtzite III-N semiconductors [Phys. Rev. B84, 085211 (2011)]
  51. Investigating the effect of non linear piezoelectricity on the excitonic properties of III-N semiconductor quantum dots
  52. Physical Review B, August 2011, American Physical Society (APS)