What is it about?
There are a number of segregation models to explain the way 2 atomic species mix during epitaxial growth of semiconductors. In this paper we discover that when two pairs of species mix concurrently, the process is better described by the little known Godbey-Ancona model for segregation.
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Why is it important?
This models can aid substantially the understanding and hence control of epitaxial growth of quaternary semiconductor alloys.
Perspectives
Comparing all segregation models with STM atomic resolution data provided good evidence that epitaxial growth is not a surface mechanism but involves at least 2 monolayers under the surface.
Dr Max A Migliorato
University of Manchester
Read the Original
This page is a summary of: Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer, Physical Review B, October 2009, American Physical Society (APS),
DOI: 10.1103/physrevb.80.165334.
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