All Stories

  1. Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditions

    Article • Applied Physics Express, September 2025, Institute of Physics Publishing

    Masashi Kato

  2. Focused light birefringence for three-dimensional observation of dislocations in silicon carbide wafers

    Article • Review of Scientific Instruments, August 2025, American Institute of Physics

    Masashi Kato

  3. Difference between the Si- and C-faces in channeling Al ion implantation along the direction in 4H-SiC

    Article • Japanese Journal of Applied Physics, August 2025, Institute of Physics Publishing

    Masashi Kato

  4. Bulk and surface recombination of carriers in SiC and related wide band gap semiconductor materials

    Article • Japanese Journal of Applied Physics, June 2025, Institute of Physics Publishing

    Masashi Kato

  5. Hydrogen and point defect introduction into 4H-SiC by plasma treatment

    Article • Japanese Journal of Applied Physics, May 2025, Institute of Physics Publishing

    Masashi Kato

  6. Observation of point defect and carrier lifetime distributions in hydrogen or helium ion implanted SiC PiN diodes for suppression of bipolar degradation

    Article • Japanese Journal of Applied Physics, January 2025, Institute of Physics Publishing

    Masashi Kato

  7. Controlled Domain in 3C-SiC Epitaxial Growth on Off-oriented 4H-SiC Substrates for Improvement of Photocathode Performance

    Article • ECS Journal of Solid State Science and Technology, December 2024, The Electrochemical Society

    Masashi Kato

  8. Charge carrier recombination in TiO2 and SrTiO3 single crystals: Impact of CoOx cocatalyst loading

    Article • Journal of Applied Physics, November 2024, American Institute of Physics

    Masashi Kato

  9. Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation

    Article • Applied Physics Express, August 2024, Institute of Physics Publishing

    Masashi Kato

  10. Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV

    Article • Materials Science in Semiconductor Processing, August 2024, Elsevier

    Masashi Kato

  11. Effects of proton implantation into 4H-SiC substrate: Stacking faults in epilayer on the substrate

    Article • Materials Science in Semiconductor Processing, June 2024, Elsevier

    Masashi Kato

  12. Analysis of defects dominating carrier recombination in CeO2 single crystal for photocatalytic applications

    Article • Journal of Physics D Applied Physics, May 2024, Institute of Physics Publishing

    Masashi Kato

  13. Photoelectrical characterization of heavily doped p-SiC Schottky contacts

    Article • Japanese Journal of Applied Physics, April 2024, Institute of Physics Publishing

    Masashi Kato

  14. "Boosts solar cell efficiency by reducing energy loss, aiding sustainable energy progress."

    Article • Journal of Applied Physics, February 2024, American Institute of Physics

    Miss NTUMBA LOBO, Masashi Kato

  15. Surface recombination velocities for 4H–SiC: Dependence of excited carrier concentration and surface passivation

    Article • Materials Science in Semiconductor Processing, February 2024, Elsevier

    Masashi Kato

  16. Effect of dislocations on carrier recombination and photoelectrochemical activity in polished and unpolished TiO2 and SrTiO3 crystals

    Article • Journal of Applied Physics, January 2024, American Institute of Physics

    Endong Zhang, Masashi Kato

  17. Effects of proton implantation for expansion of basal plane dislocations in SiC toward suppression of bipolar degradation: review and perspective

    Article • Japanese Journal of Applied Physics, January 2024, Institute of Physics Publishing

    Masashi Kato

  18. Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions

    Article • Japanese Journal of Applied Physics, January 2024, Institute of Physics Publishing

    Masashi Kato

  19. Unravelling material properties of halide perovskites by combined microwave photoconductivity and time-resolved photoluminescence spectroscopy

    Article • Journal of Materials Chemistry C, January 2024, Royal Society of Chemistry

    Masashi Kato

  20. Analysis of carrier recombination coefficients of 3C- and 6H-SiC: Insights into recombination mechanisms in stacking faults of 4H-SiC

    Article • AIP Advances, August 2023, American Institute of Physics

    Masashi Kato

  21. Development of an angle detection system for channeling implantation to the c-axis of SiC using birefringence phenomenon

    Article • Japanese Journal of Applied Physics, June 2023, Institute of Physics Publishing

    Masashi Kato

  22. Suppression of partial dislocation glide motion during contraction of stacking faults in SiC epitaxial layers by hydrogen ion implantation

    Article • Applied Physics Express, February 2023, Institute of Physics Publishing

    Masashi Kato

  23. 4H-SiC Auger recombination coefficient under the high injection condition

    Article • Japanese Journal of Applied Physics, January 2023, Institute of Physics Publishing

    Masashi Kato

  24. Analysis of carrier lifetime in a drift layer of 1.2-kV class 4H–SiC devices toward complete suppression of bipolar degradation

    Article • Materials Science in Semiconductor Processing, January 2023, Elsevier

    Masashi Kato

  25. Effects of ion implantation process on defect distribution in SiC SJ-MOSFET

    Article • Japanese Journal of Applied Physics, January 2023, Institute of Physics Publishing

    Masashi Kato

  26. Surface recombination velocities for the (100) and (001) crystal faces of bismuth vanadate single crystals

    Article • Journal of Physics D Applied Physics, December 2022, Institute of Physics Publishing

    Masashi Kato

  27. Trapping effects and surface/interface recombination of carrier recombination in single- or poly-crystalline metal halide perovskites

    Article • Japanese Journal of Applied Physics, November 2022, Institute of Physics Publishing

    Miss NTUMBA LOBO, Masashi Kato

  28. Mechanochemical Synthesis of Cesium Titanium Halide Perovskites Cs2TiBr6‐xIx (x = 0, 2, 4, 6)

    Article • Crystal Research and Technology, November 2022, Wiley

    Masashi Kato

  29. Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

    Article • Scientific Reports, November 2022, Springer Science + Business Media

    Masashi Kato

  30. Estimation of surface recombination velocities and bulk carrier lifetime for SrTiO3 using angle-lapped structures

    Article • Chemical Physics Letters, October 2022, Elsevier

    Masashi Kato

  31. Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

    Article • September 2022, Research Square

    Masashi Kato

  32. Metal Organic Frameworks as Synthetic Precursors for SILAR: A Tale of Two Oxides

    Article • ECS Journal of Solid State Science and Technology, September 2022, The Electrochemical Society

    Masashi Kato

  33. Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

    Article • Scientific Reports, August 2022, Springer Science + Business Media

    Masashi Kato

  34. Relationship of carbon concentration and slow decays of photoluminescence in homoepitaxial n-type GaN layers

    Article • Japanese Journal of Applied Physics, July 2022, Institute of Physics Publishing

    Masashi Kato

  35. Hole capture cross section of the Al acceptor level in 4H-SiC

    Article • Materials Today Communications, June 2022, Elsevier

    Masashi Kato

  36. Characterization of Defect Structure in Epilayer Grown on On-Axis SiC by Synchrotron X-ray Topography

    Article • Journal of Electronic Materials, January 2022, Springer Science + Business Media

    Dr Kotaro Ishiji, Masashi Kato

  37. Depth Distribution of Defects in SiC PiN Diodes Formed Using Ion Implantation or Epitaxial Growth

    Article • physica status solidi (b), October 2021, Wiley

    Masashi Kato

  38. Durable and efficient photoelectrochemical water splitting using TiO2 and 3C–SiC single crystals in a tandem structure

    Article • Solar Energy Materials and Solar Cells, September 2021, Elsevier

    Masashi Kato

  39. Deep levels related to the carbon antisite–vacancy pair in 4H-SiC

    Article • Journal of Applied Physics, August 2021, American Institute of Physics

    Masashi Kato

  40. Carrier recombination in SrTiO3 single crystals: impacts of crystal faces and Nb doping

    Article • Journal of Physics D Applied Physics, June 2021, Institute of Physics Publishing

    Masashi Kato

  41. Flexible Photocatalytic Electrode Using Graphene, Non‐noble Metal, and Organic Semiconductors for Hydrogen Evolution Reaction

    Article • Energy Technology, May 2021, Wiley

    Masashi Kato

  42. Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers

    Article • Journal of Applied Physics, March 2021, American Institute of Physics

    Masashi Kato

  43. Nondestructive measurements of depth distribution of carrier lifetimes in 4H–SiC thick epitaxial layers using time-resolved free carrier absorption with intersectional lights

    Article • Review of Scientific Instruments, December 2020, American Institute of Physics

    Masashi Kato

  44. Mapping of large structural defects in SiC Schottky contacts using internal photoemission microscopy

    Article • Materials Science in Semiconductor Processing, November 2020, Elsevier

    Masashi Kato

  45. Observation of carrier lifetime distribution in 4H-SiC thick epilayers using microscopic time-resolved free carrier absorption system

    Article • Journal of Applied Physics, September 2020, American Institute of Physics

    Masashi Kato

  46. Surface recombination velocities for 4H-SiC: Temperature dependence and difference in conductivity type at several crystal faces

    Article • Journal of Applied Physics, May 2020, American Institute of Physics

    Masashi Kato

  47. Highly efficient 3C-SiC photocathodes with texture structures formed by electrochemical etching

    Article • Applied Physics Express, February 2020, Institute of Physics Publishing

    Masashi Kato

  48. Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy

    Article • CrystEngComm, January 2020, Royal Society of Chemistry

    Masashi Kato

  49. Characterisation of defects in p-type 4H-, 6H- and 3C-SiC epilayers grown on SiC substrates

    Article • Materials Letters, November 2019, Elsevier

    Masashi Kato

  50. Heat shock protein 70 is a key molecule to rescue imbalance caused by low-frequency noise

    Article • Archives of Toxicology, October 2019, Springer Science + Business Media

    Masashi Kato

  51. Impact of intrinsic defects on excitation dependent carrier lifetime in thick 4H-SiC studied by complementing microwave photoconductivity, free-carrier absorption and time-resolved photoluminescence techniques

    Article • Journal of Luminescence, August 2019, Elsevier

    Masashi Kato

  52. Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method

    Article • Journal of Visualized Experiments, April 2019, MyJove Corporation

    Masashi Kato

  53. Recombination and diffusion processes in electronic grade 4H silicon carbide

    Article • Lithuanian Journal of Physics, April 2019, Lithuanian Academy of Sciences

    Masashi Kato

  54. Ultraviolet light induced electrical hysteresis effect in graphene-GaN heterojunction

    Article • Applied Physics Letters, April 2019, American Institute of Physics

    Masashi Kato

  55. Effects of Nb Doping on the Photocatalytic Performance of Rutile TiO2 Single Crystals

    Article • Journal of The Electrochemical Society, January 2019, The Electrochemical Society

    Masashi Kato

  56. Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC

    Article • Journal of Applied Physics, September 2018, American Institute of Physics

    Masashi Kato

  57. Expansion of a single Shockley stacking fault in a 4H-SiC (11 2 ¯0) epitaxial layer caused by electron beam irradiation

    Article • Journal of Applied Physics, June 2018, American Institute of Physics

    Dr. Yongzhao YAO, Masashi Kato

  58. Microscopic FCA System for Depth-Resolved Carrier Lifetime Measurement in SiC

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Masashi Kato

  59. Expansion of Basal Plane Dislocation in 4H-SiC Epitaxial Layer on A-Plane by Electron Beam Irradiation

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Masashi Kato, Dr. Yongzhao YAO, Yukari Ishikawa

  60. Increased expression level of Hsp70 in the inner ears of mice by exposure to low frequency noise

    Article • Hearing Research, June 2018, Elsevier

    Masashi Kato

  61. Observations of inhomogeneity of 3C-SiC layers grown on 6H-SiC substrates by using scanning internal photoemission microscopy

    Article • Japanese Journal of Applied Physics, February 2018, Institute of Physics Publishing

    Masashi Kato

  62. Passivation of Surface Recombination at the Si-Face of 4H-SiC by Acidic Solutions

    Article • ECS Journal of Solid State Science and Technology, January 2018, The Electrochemical Society

    Masashi Kato

  63. Effects of thermal aging on Cu nanoparticle/Bi-Sn solder hybrid bonding

    Article • Microelectronics Reliability, November 2017, Elsevier

    Masashi Kato

  64. Solar Water Splitting Utilizing a SiC Photocathode, a BiVO4Photoanode, and a Perovskite Solar Cell

    Article • ChemSusChem, October 2017, Wiley

    Masashi Kato, Professor Osamu Ishitani

  65. Improved performance of 3C SiC photocathodes by using a pn junction

    Article • International Journal of Hydrogen Energy, September 2017, Elsevier

    Masashi Kato

  66. (Invited) P-Type 3C-SiC Photocathode for Solar to Hydrogen Energy Conversion

    Article • ECS Meeting Abstracts, September 2017, The Electrochemical Society

    Masashi Kato

  67. Correlation Between Carrier Lifetime and Photolytic Performance of Nb-Doped TiO2 Single Crystals

    Article • ECS Meeting Abstracts, September 2017, The Electrochemical Society

    Masashi Kato

  68. (Invited) P-Type 3C-SiC Photocathode for Solar to Hydrogen Energy Conversion

    Article • ECS Transactions, August 2017, The Electrochemical Society

    Masashi Kato

  69. Risk Assessment of Neonatal Exposure to Low Frequency Noise Based on Balance in Mice

    Article • Frontiers in Behavioral Neuroscience, February 2017, Frontiers

    Masashi Kato

  70. Two-dimensional characterization of 3C-SiC layers using scanning internal photoemission microscopy: Mapping of electrical characteristics and crystal quality in domain boundary regions

    Article • Japanese Journal of Applied Physics, February 2017, Institute of Physics Publishing

    Masashi Kato

  71. The enhanced performance of 3C-SiC photocathodes for the generation of hydrogen through the use of cocatalysts

    Article • Applied Physics Letters, October 2016, American Institute of Physics

    Masashi Kato

  72. Evaluation of surface recombination of SiC for development of bipolar devices

    Article • September 2016, SPIE

    Masashi Kato

  73. Degradation of a sintered Cu nanoparticle layer studied by synchrotron radiation computed laminography

    Article • Microelectronics Reliability, August 2016, Elsevier

    Masashi Kato

  74. Improved performance of InGaN/GaN multilayer solar cells with an atomic-layer-deposited Al2O3 passivation film

    Article • Electronics Letters, July 2016, the Institution of Engineering and Technology (the IET)

    Masashi Kato

  75. Carrier lifetime measurements on various crystal faces of rutile TiO single crystals

    Article • Materials Letters, December 2015, Elsevier

    Masashi Kato

  76. Development of a microwave photoconductance measurement technique for the study of carrier dynamics in highly-excited 4H-SiC

    Article • Measurement Science and Technology, November 2015, Institute of Physics Publishing

    Masashi Kato

  77. Spectral response, carrier lifetime, and photocurrents of SiC photocathodes

    Article • Japanese Journal of Applied Physics, October 2015, Institute of Physics Publishing

    Masashi Kato

  78. Photocathode for hydrogen generation using 3C-SiC epilayer grown on vicinal off-angle 4H-SiC substrate

    Article • Applied Physics Express, August 2015, Institute of Physics Publishing

    Masashi Kato

  79. Microwave reflectivity from 4H-SiC under a high-injection condition: impacts of electron–hole scattering

    Article • Japanese Journal of Applied Physics, March 2015, Japan Society of Applied Physics

    Masashi Kato

  80. Howling reduction by analog phase-locked loop and active noise control circuits

    Article • Applied Acoustics, January 2015, Elsevier

    Masashi Kato

  81. Surface recombination velocities for n-type 4H-SiC treated by various processes

    Article • Journal of Physics D Applied Physics, July 2014, Institute of Physics Publishing

    Masashi Kato

  82. Epitaxial p-type SiC as a self-driven photocathode for water splitting

    Article • International Journal of Hydrogen Energy, March 2014, Elsevier

    Masashi Kato

  83. Estimation of Surface Recombination Velocities for n-Type 4H-SiC Surfaces Treated by Various Processes

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Masashi Kato

  84. Impact of Carrier Lifetime on Efficiency of Photolytic Hydrogen Generation by p-Type SiC

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Masashi Kato

  85. Observation of deep levels and their hole capture behavior in p-type 4H-SiC epilayers with and without electron irradiation

    Article • Japanese Journal of Applied Physics, February 2014, Institute of Physics Publishing

    Masashi Kato

  86. Identification of Structures of the Deep Levels in 4H-SiC

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Masashi Kato

  87. Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Masashi Kato

  88. Efficiency of a solar cell with intermediate energy levels: An example study on hydrogen implanted Si solar cells

    Article • Journal of Applied Physics, September 2013, American Institute of Physics

    Masashi Kato

  89. Excess carrier lifetime and strain distributions in a 3C-SiC wafer grown on an undulant Si substrate

    Article • phys stat sol (a), June 2013, Wiley

    Masashi Kato

  90. Leakage Current Suppression by Passivation of Defects by Anodic Oxidation of 4H-SiC Schottky Contacts

    Article • Japanese Journal of Applied Physics, February 2013, Institute of Physics Publishing

    Masashi Kato

  91. Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    Masashi Kato

  92. Solar-to-Hydrogen Conversion Efficiency of Water Photolysis with Epitaxially Grown p-Type SiC

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    Masashi Kato

  93. Performance Improvement of the Analog ANC Circuit for a Duct by Insertion of an All-Pass Filter

    Article • IEICE Transactions on Fundamentals of Electronics Communications and Computer Sciences, January 2013, Institute of Electronics, Information and Communications Engineers (IEICE)

    Masashi Kato

  94. SiC photoelectrodes for a self-driven water-splitting cell

    Article • Applied Physics Letters, July 2012, American Institute of Physics

    Masashi Kato

  95. Correlation between Strain and Excess Carrier Lifetime in a 3C-SiC Wafer

    Article • Materials Science Forum, May 2012, Trans Tech Publications

    Masashi Kato

  96. Characterization of Photoelectrochemical Properties of SiC as a Water Splitting Material

    Article • Materials Science Forum, May 2012, Trans Tech Publications

    Masashi Kato

  97. Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes

    Article • Materials Science Forum, May 2012, Trans Tech Publications

    Masashi Kato

  98. Estimation of Surface Recombination Velocity from Thickness Dependence of Carrier Lifetime in n-Type 4H-SiC Epilayers

    Article • Japanese Journal of Applied Physics, February 2012, Institute of Physics Publishing

    Masashi Kato

  99. Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation

    Article • Japanese Journal of Applied Physics, February 2012, Institute of Physics Publishing

    Masashi Kato

  100. On Applicability of Time-Resolved Optical Techniques for Characterization of Differently Grown 3C-SiC Crystals and Heterostructures

    Article • Materials Science Forum, January 2012, Trans Tech Publications

    Masashi Kato

  101. Discussion on Activities of Enlightenment for High School Students Based on Survey

    Article • IEEJ Transactions on Fundamentals and Materials, January 2012, Institute of Electrical Engineers of Japan (IEE Japan)

    Professor Akimasa Hirata, Masashi Kato

  102. Method for Interactive Communication in Lectures by Preliminarily Provision of Construction-type Slides and Random Assignment of Students

    Article • IEEJ Transactions on Fundamentals and Materials, January 2012, Institute of Electrical Engineers of Japan (IEE Japan)

    Masashi Kato

  103. Understanding of Status of Practice and Fulfillment in the Graduation Work by Introduction of the Recording Notebook

    Article • IEEJ Transactions on Fundamentals and Materials, January 2012, Institute of Electrical Engineers of Japan (IEE Japan)

    Masashi Kato

  104. Active noise control in a duct by an analog neural network circuit

    Article • Applied Acoustics, October 2011, Elsevier

    Masashi Kato

  105. A diffraction-based technique for determination of interband absorption coefficients in bulk 3C-, 4H- and 6H-SiC crystals

    Article • Journal of Physics D Applied Physics, August 2011, Institute of Physics Publishing

    Masashi Kato

  106. Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO

    Article • Japanese Journal of Applied Physics, March 2011, Institute of Physics Publishing

    Masashi Kato

  107. Improvement of Schottky Contact Characteristics by Anodic Oxidation of 4H-SiC

    Article • Materials Science Forum, March 2011, Trans Tech Publications

    Masashi Kato

  108. Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques

    Article • Materials Science Forum, March 2011, Trans Tech Publications

    Masashi Kato

  109. Investigation of Time Series Change and Difference between Universities in Motivation for University Entrance of Students Studying Electrical and Electronic Engineering

    Article • IEEJ Transactions on Fundamentals and Materials, January 2011, Institute of Electrical Engineers of Japan (IEE Japan)

    Masashi Kato, Professor Akimasa Hirata

  110. Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates

    Article • Journal of Electronic Materials, September 2010, Springer Science + Business Media

    Masashi Kato

  111. Deep levels affecting the resistivity in semi-insulating 6H–SiC

    Article • Journal of Applied Physics, September 2010, American Institute of Physics

    Masashi Kato

  112. Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method

    Article • Materials Science Forum, April 2010, Trans Tech Publications

    Masashi Kato

  113. Correlation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiC

    Article • Materials Science Forum, April 2010, Trans Tech Publications

    Masashi Kato

  114. Nonequilibrium Carrier Recombination in Highly Excited Bulk SiC Crystals

    Article • Materials Science Forum, April 2010, Trans Tech Publications

    Masashi Kato

  115. Internal Stress in Freestanding 3C-SiC Grown on Si and Relation to Carrier Lifetime

    Article • January 2010, American Institute of Physics

    Masashi Kato

  116. Introduction of Objective GPAs and its Application to Careful Guidance for Students

    Article • IEEJ Transactions on Fundamentals and Materials, January 2010, Institute of Electrical Engineers of Japan (IEE Japan)

    Masashi Kato, Professor Akimasa Hirata

  117. Excess carrier recombination lifetime of bulk n-type 3C-SiC

    Article • Applied Physics Letters, December 2009, American Institute of Physics

    Masashi Kato

  118. Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy

    Article • Materials Science Forum, March 2009, Trans Tech Publications

    Masashi Kato

  119. Annealing Study of the Electrochemically Deposited InSxOy Thin Film and Its Photovoltaic Application

    Article • IEICE Transactions on Electronics, January 2009, Institute of Electronics, Information and Communications Engineers (IEICE)

    Masashi Kato

  120. Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition

    Article • Materials Science Forum, September 2008, Trans Tech Publications

    Masashi Kato

  121. Characterization of plasma etching damage on p-type GaN using Schottky diodes

    Article • Journal of Applied Physics, May 2008, American Institute of Physics

    Masashi Kato

  122. Low-Power Switched Current Memory Cell with CMOS-Type Configuration

    Article • IEICE Transactions on Electronics, January 2008, Institute of Electronics, Information and Communications Engineers (IEICE)

    Masashi Kato

  123. State-of-Art Semiconductor-Memory Factory

    Article • The Journal of the Institute of Electrical Engineers of Japan, January 2008, Institute of Electrical Engineers of Japan (IEE Japan)

    Masashi Kato

  124. Observation of Inhomogeneity of Schottky Barrier Height on 4H–SiC Using the Electrochemical Deposition

    Article • Japanese Journal of Applied Physics, October 2007, Institute of Physics Publishing

    Masashi Kato

  125. Excess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay Method

    Article • September 2007, CrossRef Test Account

    Masashi Kato

  126. Excess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay Method

    Article • Materials Science Forum, September 2007, Trans Tech Publications

    Masashi Kato

  127. Excess Carrier Lifetime in a Bulk p-Type 4H–SiC Wafer Measured by the Microwave Photoconductivity Decay Method

    Article • Japanese Journal of Applied Physics, August 2007, Institute of Physics Publishing

    Masashi Kato

  128. Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method

    Article • Japanese Journal of Applied Physics, January 2007, Institute of Physics Publishing

    Masashi Kato

  129. Optical cross sections of deep levels in 4H-SiC

    Article • Journal of Applied Physics, September 2006, American Institute of Physics

    Masashi Kato

  130. Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution

    Article • Japanese Journal of Applied Physics, December 2005, Institute of Physics Publishing

    Masashi Kato

  131. Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition

    Article • May 2005, CrossRef Test Account

    Masashi Kato

  132. Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution

    Article • Materials Science Forum, June 2004, Trans Tech Publications

    Masashi Kato

  133. Characterization of deep levels in 6H-SiC by optical-capacitance-transient spectroscopy

    Article • Journal of Applied Physics, September 2003, American Institute of Physics

    Masashi Kato

  134. Electrochemical Etching of n-Type 6H-SiC Using Aqueous KOH Solutions

    Article • Materials Science Forum, January 2003, Trans Tech Publications

    Masashi Kato

  135. Etch Pit Observation for 6H-SiC by Electrochemical Etching Using an Aqueous KOH Solution

    Article • Journal of The Electrochemical Society, January 2003, The Electrochemical Society

    Masashi Kato

  136. Deep center passivation in 3C-SiC by hydrogen plasma with a grid for damage suppression

    Article • Solid-State Electronics, December 2002, Elsevier

    Masashi Kato

  137. Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation

    Article • Materials Science Forum, January 2002, Trans Tech Publications

    Masashi Kato

  138. Characterization of Deep Levels in 3C-SiC by Optical-Capacitance-Transient Spectroscopy

    Article • MRS Proceedings, January 2002, Springer Science + Business Media

    Masashi Kato

  139. Deep level study in epitaxial 4H-SiC grown on substrates inclined toward <1 100>

    Article • MRS Proceedings, January 2002, Springer Science + Business Media

    Masashi Kato