All Stories

  1. "Boosts solar cell efficiency by reducing energy loss, aiding sustainable energy progress."

    Article • Journal of Applied Physics, February 2024, American Institute of Physics

    NTUMBA LOBO, Masashi Kato

  2. Analysis of carrier recombination coefficients of 3C- and 6H-SiC: Insights into recombination mechanisms in stacking faults of 4H-SiC

    Article • AIP Advances, August 2023, American Institute of Physics

    Masashi Kato

  3. Carrier recombination in SrTiO3 single crystals: impacts of crystal faces and Nb doping

    Article • Journal of Physics D Applied Physics, June 2021, Institute of Physics Publishing

    Masashi Kato

  4. Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers

    Article • Journal of Applied Physics, March 2021, American Institute of Physics

    Masashi Kato

  5. Nondestructive measurements of depth distribution of carrier lifetimes in 4H–SiC thick epitaxial layers using time-resolved free carrier absorption with intersectional lights

    Article • Review of Scientific Instruments, December 2020, American Institute of Physics

    Masashi Kato

  6. Observation of carrier lifetime distribution in 4H-SiC thick epilayers using microscopic time-resolved free carrier absorption system

    Article • Journal of Applied Physics, September 2020, American Institute of Physics

    Masashi Kato

  7. Surface recombination velocities for 4H-SiC: Temperature dependence and difference in conductivity type at several crystal faces

    Article • Journal of Applied Physics, May 2020, American Institute of Physics

    Masashi Kato

  8. Highly efficient 3C-SiC photocathodes with texture structures formed by electrochemical etching

    Article • Applied Physics Express, February 2020, Institute of Physics Publishing

    Masashi Kato

  9. Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy

    Article • CrystEngComm, January 2020, Royal Society of Chemistry

    Masashi Kato

  10. Characterisation of defects in p-type 4H-, 6H- and 3C-SiC epilayers grown on SiC substrates

    Article • Materials Letters, November 2019, Elsevier

    Masashi Kato

  11. Heat shock protein 70 is a key molecule to rescue imbalance caused by low-frequency noise

    Article • Archives of Toxicology, October 2019, Springer Science + Business Media

    Masashi Kato

  12. Ultraviolet light induced electrical hysteresis effect in graphene-GaN heterojunction

    Article • Applied Physics Letters, April 2019, American Institute of Physics

    Masashi Kato

  13. Effects of Nb Doping on the Photocatalytic Performance of Rutile TiO2 Single Crystals

    Article • Journal of The Electrochemical Society, January 2019, The Electrochemical Society

    Masashi Kato

  14. Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC

    Article • Journal of Applied Physics, September 2018, American Institute of Physics

    Masashi Kato

  15. Expansion of a single Shockley stacking fault in a 4H-SiC (11 2 ¯0) epitaxial layer caused by electron beam irradiation

    Article • Journal of Applied Physics, June 2018, American Institute of Physics

    Dr. Yongzhao YAO, Masashi Kato

  16. Microscopic FCA System for Depth-Resolved Carrier Lifetime Measurement in SiC

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Masashi Kato

  17. Expansion of Basal Plane Dislocation in 4H-SiC Epitaxial Layer on A-Plane by Electron Beam Irradiation

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Masashi Kato, Dr. Yongzhao YAO, Yukari Ishikawa

  18. Increased expression level of Hsp70 in the inner ears of mice by exposure to low frequency noise

    Article • Hearing Research, June 2018, Elsevier

    Masashi Kato

  19. Passivation of Surface Recombination at the Si-Face of 4H-SiC by Acidic Solutions

    Article • ECS Journal of Solid State Science and Technology, January 2018, The Electrochemical Society

    Masashi Kato

  20. Effects of thermal aging on Cu nanoparticle/Bi-Sn solder hybrid bonding

    Article • Microelectronics Reliability, November 2017, Elsevier

    Masashi Kato

  21. Solar Water Splitting Utilizing a SiC Photocathode, a BiVO4Photoanode, and a Perovskite Solar Cell

    Article • ChemSusChem, October 2017, Wiley

    Masashi Kato

  22. Improved performance of 3C SiC photocathodes by using a pn junction

    Article • International Journal of Hydrogen Energy, September 2017, Elsevier

    Masashi Kato

  23. (Invited) P-Type 3C-SiC Photocathode for Solar to Hydrogen Energy Conversion

    Article • ECS Transactions, August 2017, The Electrochemical Society

    Masashi Kato

  24. Risk Assessment of Neonatal Exposure to Low Frequency Noise Based on Balance in Mice

    Article • Frontiers in Behavioral Neuroscience, February 2017, Frontiers

    Masashi Kato

  25. Improved performance of InGaN/GaN multilayer solar cells with an atomic-layer-deposited Al2O3 passivation film

    Article • Electronics Letters, July 2016, the Institution of Engineering and Technology (the IET)

    Masashi Kato

  26. Microwave reflectivity from 4H-SiC under a high-injection condition: impacts of electron–hole scattering

    Article • Japanese Journal of Applied Physics, March 2015, Japan Society of Applied Physics

    Masashi Kato

  27. Howling reduction by analog phase-locked loop and active noise control circuits

    Article • Applied Acoustics, January 2015, Elsevier

    Masashi Kato

  28. Surface recombination velocities for n-type 4H-SiC treated by various processes

    Article • Journal of Physics D Applied Physics, July 2014, Institute of Physics Publishing

    Masashi Kato

  29. Epitaxial p-type SiC as a self-driven photocathode for water splitting

    Article • International Journal of Hydrogen Energy, March 2014, Elsevier

    Masashi Kato

  30. Identification of Structures of the Deep Levels in 4H-SiC

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Masashi Kato

  31. Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Masashi Kato

  32. Excess carrier lifetime and strain distributions in a 3C-SiC wafer grown on an undulant Si substrate

    Article • physica status solidi (a), June 2013, Wiley

    Masashi Kato

  33. Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    Masashi Kato

  34. Solar-to-Hydrogen Conversion Efficiency of Water Photolysis with Epitaxially Grown p-Type SiC

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    Masashi Kato

  35. SiC photoelectrodes for a self-driven water-splitting cell

    Article • Applied Physics Letters, July 2012, American Institute of Physics

    Masashi Kato

  36. Correlation between Strain and Excess Carrier Lifetime in a 3C-SiC Wafer

    Article • Materials Science Forum, May 2012, Trans Tech Publications

    Masashi Kato

  37. Characterization of Photoelectrochemical Properties of SiC as a Water Splitting Material

    Article • Materials Science Forum, May 2012, Trans Tech Publications

    Masashi Kato

  38. Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes

    Article • Materials Science Forum, May 2012, Trans Tech Publications

    Masashi Kato

  39. Estimation of Surface Recombination Velocity from Thickness Dependence of Carrier Lifetime in n-Type 4H-SiC Epilayers

    Article • Japanese Journal of Applied Physics, February 2012, Institute of Physics Publishing

    Masashi Kato

  40. Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation

    Article • Japanese Journal of Applied Physics, February 2012, Institute of Physics Publishing

    Masashi Kato

  41. On Applicability of Time-Resolved Optical Techniques for Characterization of Differently Grown 3C-SiC Crystals and Heterostructures

    Article • Materials Science Forum, January 2012, Trans Tech Publications

    Masashi Kato

  42. Active noise control in a duct by an analog neural network circuit

    Article • Applied Acoustics, October 2011, Elsevier

    Masashi Kato

  43. A diffraction-based technique for determination of interband absorption coefficients in bulk 3C-, 4H- and 6H-SiC crystals

    Article • Journal of Physics D Applied Physics, August 2011, Institute of Physics Publishing

    Masashi Kato

  44. Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO

    Article • Japanese Journal of Applied Physics, March 2011, Institute of Physics Publishing

    Masashi Kato

  45. Improvement of Schottky Contact Characteristics by Anodic Oxidation of 4H-SiC

    Article • Materials Science Forum, March 2011, Trans Tech Publications

    Masashi Kato

  46. Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques

    Article • Materials Science Forum, March 2011, Trans Tech Publications

    Masashi Kato

  47. Investigation of Time Series Change and Difference between Universities in Motivation for University Entrance of Students Studying Electrical and Electronic Engineering

    Article • IEEJ Transactions on Fundamentals and Materials, January 2011, Institute of Electrical Engineers of Japan (IEE Japan)

    Masashi Kato, Professor Akimasa Hirata

  48. Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates

    Article • Journal of Electronic Materials, September 2010, Springer Science + Business Media

    Masashi Kato

  49. Deep levels affecting the resistivity in semi-insulating 6H–SiC

    Article • Journal of Applied Physics, September 2010, American Institute of Physics

    Masashi Kato

  50. Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method

    Article • Materials Science Forum, April 2010, Trans Tech Publications

    Masashi Kato

  51. Correlation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiC

    Article • Materials Science Forum, April 2010, Trans Tech Publications

    Masashi Kato

  52. Nonequilibrium Carrier Recombination in Highly Excited Bulk SiC Crystals

    Article • Materials Science Forum, April 2010, Trans Tech Publications

    Masashi Kato

  53. Internal Stress in Freestanding 3C-SiC Grown on Si and Relation to Carrier Lifetime

    Article • January 2010, American Institute of Physics

    Masashi Kato

  54. Introduction of Objective GPAs and its Application to Careful Guidance for Students

    Article • IEEJ Transactions on Fundamentals and Materials, January 2010, Institute of Electrical Engineers of Japan (IEE Japan)

    Masashi Kato, Professor Akimasa Hirata

  55. Excess carrier recombination lifetime of bulk n-type 3C-SiC

    Article • Applied Physics Letters, December 2009, American Institute of Physics

    Masashi Kato

  56. Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy

    Article • Materials Science Forum, March 2009, Trans Tech Publications

    Masashi Kato

  57. Annealing Study of the Electrochemically Deposited InSxOy Thin Film and Its Photovoltaic Application

    Article • IEICE Transactions on Electronics, January 2009, Institute of Electronics, Information and Communications Engineers (IEICE)

    Masashi Kato

  58. Characterization of plasma etching damage on p-type GaN using Schottky diodes

    Article • Journal of Applied Physics, May 2008, American Institute of Physics

    Masashi Kato

  59. Low-Power Switched Current Memory Cell with CMOS-Type Configuration

    Article • IEICE Transactions on Electronics, January 2008, Institute of Electronics, Information and Communications Engineers (IEICE)

    Masashi Kato

  60. Observation of Inhomogeneity of Schottky Barrier Height on 4H–SiC Using the Electrochemical Deposition

    Article • Japanese Journal of Applied Physics, October 2007, Institute of Physics Publishing

    Masashi Kato

  61. Excess Carrier Lifetime in a Bulk p-Type 4H–SiC Wafer Measured by the Microwave Photoconductivity Decay Method

    Article • Japanese Journal of Applied Physics, August 2007, Institute of Physics Publishing

    Masashi Kato

  62. Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method

    Article • Japanese Journal of Applied Physics, January 2007, Institute of Physics Publishing

    Masashi Kato

  63. Optical cross sections of deep levels in 4H-SiC

    Article • Journal of Applied Physics, September 2006, American Institute of Physics

    Masashi Kato

  64. Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution

    Article • Japanese Journal of Applied Physics, December 2005, Institute of Physics Publishing

    Masashi Kato

  65. Characterization of deep levels in 6H-SiC by optical-capacitance-transient spectroscopy

    Article • Journal of Applied Physics, September 2003, American Institute of Physics

    Masashi Kato

  66. Electrochemical Etching of n-Type 6H-SiC Using Aqueous KOH Solutions

    Article • Materials Science Forum, January 2003, Trans Tech Publications

    Masashi Kato

  67. Etch Pit Observation for 6H-SiC by Electrochemical Etching Using an Aqueous KOH Solution

    Article • Journal of The Electrochemical Society, January 2003, The Electrochemical Society

    Masashi Kato

  68. Deep center passivation in 3C-SiC by hydrogen plasma with a grid for damage suppression

    Article • Solid-State Electronics, December 2002, Elsevier

    Masashi Kato

  69. Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation

    Article • Materials Science Forum, January 2002, Trans Tech Publications

    Masashi Kato