Expansion of Basal Plane Dislocation in 4H-SiC Epitaxial Layer on A-Plane by Electron Beam Irradiation

Masaki Sudo, Yukari Ishikawa, Yong Zhao Yao, Yoshihiro Sugawara, Masashi Kato
  • Materials Science Forum, June 2018, Trans Tech Publications
  • DOI: 10.4028/www.scientific.net/msf.924.151

The authors haven't finished explaining this publication. If you are the author, sign in to claim or explain your work.

Read Publication

http://dx.doi.org/10.4028/www.scientific.net/msf.924.151

The following have contributed to this page: Masashi Kato and Dr. Yongzhao YAO