All Stories

  1. Anisotropic mechanical properties of β-Ga2O3 single-crystal measured via angle-dependent nanoindentation using a Berkovich indenter
  2. Three-dimensional distribution and propagation of dislocations in β-Ga2O3 revealed by Borrmann effect x-ray topography
  3. Large-area total-thickness imaging and Burgers vector analysis of dislocations in β-Ga2O3 using bright-field x-ray topography based on anomalous transmission
  4. Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron x-ray topography
  5. Anisotropic radius of curvature of crystal planes in wide-bandgap semiconductor wafers measured by X-ray diffraction
  6. Visualization of the curving of crystal planes in β-Ga2O3 by X-ray topography
  7. Deep ultraviolet emission from multiple quantum wells on flat N-polar AlN templates fabricated using periodical pulsed H2 etching
  8. Generation of dislocations from scratches on GaN formed during wafer fabrication and dislocation reactions during homoepitaxial growth
  9. Preparation of crystalline SiC coating from Si and C powder mixture using laser sublimation technique
  10. X-ray topography of crystallographic defects in wide-bandgap semiconductors using a high-resolution digital camera
  11. Slip planes in monoclinic β-Ga2O3 revealed from its {010} face via synchrotron X-ray diffraction and X-ray topography
  12. Dislocation classification of a large-area β-Ga2O3 single crystal via contrast analysis of affine-transformed X-ray topographs
  13. Identification of fine structures at the surface of epi-ready GaN wafer observed by confocal differential interference contrast microscopy
  14. Screw dislocations on $\left\{1\bar{2}12\right\}$ pyramidal planes induced by Vickers indentation in HVPE GaN
  15. Study of dislocations in AlN single-crystal using bright-field synchrotron x-ray topography under a multiple-beam diffraction condition
  16. Three-Dimensional Observation of Internal Defects in a β-Ga2O3 (001) Wafer Using the FIB–SEM Serial Sectioning Method
  17. AFM Observation of Etch-Pit Shapes on β-Ga2O3 (001) Surface Formed by Molten Alkali Etching
  18. Mg diffusion and activation along threading dislocations in GaN
  19. Identification of Burgers vectors of dislocations in monoclinic β-Ga2O3 via synchrotron x-ray topography
  20. Observation of dislocations in β-Ga2O3 single-crystal substrates by synchrotron X-ray topography, chemical etching, and transmission electron microscopy
  21. Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor
  22. Crystallinity Evaluation and Dislocation Observation for an Aluminum Nitride Single-Crystal Substrate on a Wafer Scale
  23. Growth of N‐Polar Aluminum Nitride on Vicinal Sapphire Substrates and Aluminum Nitride Bulk Substrates
  24. Revelation of Dislocations in β‐Ga 2 O 3 Substrates Grown by Edge‐Defined Film‐Fed Growth
  25. X-ray diffraction and Raman characterization of β-Ga2O3 single crystal grown by edge-defined film-fed growth method
  26. Invited: Analysis and Detection of Dislocations in GaN
  27. Revelation of Dislocations in β‐Ga 2 O 3 Substrates Grown by Edge‐Defined Film‐Fed Growth
  28. Observation of dislocations and their arrays in physical vapor transport-grown AlN single-crystal substrate by synchrotron X-ray topography
  29. Synchrotron X-Ray Topography Observation and Classification of Dislocations in $\beta$-Ga2O3 single crystal substrates grown by EFG
  30. Expansion of a single Shockley stacking fault in a 4H-SiC (11 2 ¯0) epitaxial layer caused by electron beam irradiation
  31. Expansion of Basal Plane Dislocation in 4H-SiC Epitaxial Layer on A-Plane by Electron Beam Irradiation
  32. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate
  33. Observation of Threading Dislocations in Ammonothermal Gallium Nitride Single Crystal Using Synchrotron X-ray Topography
  34. Characterization of threading dislocations in GaN (0001) substrates by photoluminescence imaging, cathodoluminescence mapping and etch pits
  35. Dislocation Revelation and Categorization for Thick Free-Standing GaN Substrates Grown by HVPE
  36. Elementary Screw and Mixed-Type Dislocations in 4H-SiC Characterized by X-Ray Topography Taken with Six Equivalent 11-28 g-Vectors and a Comparison to Etch Pit Evaluation
  37. Revelation of dislocations in HVPE GaN single crystal by KOH etching with Na2O2 additive and cathodoluminescence mapping
  38. Dislocations in SiC Revealed by NaOH Vapor Etching and a Comparison with X-Ray Topography Taken with Various g-Vectors
  39. Fast removal of surface damage layer from single crystal diamond by using chemical etching in molten KCl + KOH solution
  40. Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial Growth
  41. Cross-sectional observation of stacking faults in 4H-SiC by KOH etching on nonpolar $\{ 1\bar{1}00\} $ face, cathodoluminescence imaging, and transmission electron microscopy
  42. Comparison of slicing-induced damage in hexagonal SiC by wire sawing with loose abrasive, wire sawing with fixed abrasive, and electric discharge machining
  43. Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC Wafers by Using Chemical Etching with Molten KCl+KOH
  44. Dislocation Revelation for 4H-SiC by Using Vaporized NaOH: A Possible Way to Distinguish Edge, Screw and Mixed Threading Dislocations by Etch Pit Method
  45. Characterization of Damage Induced by Electric Discharge Machining and Wiresawing with Loose Abrasive at Subsurface of SiC Crystal
  46. Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy
  47. Correlation between etch pits formed by molten KOH+Na2O2 etching and dislocation types in heavily doped n+-4H–SiC studied by X-ray topography
  48. Large-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000 °C
  49. Transmission Electron Microscopy Analysis of a Threading Dislocation with $c+a$ Burgers Vector in 4H-SiC
  50. Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam Irradiation
  51. Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy
  52. Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing
  53. Dislocation Revelation from ($000\bar{1}$) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature
  54. Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer
  55. Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate
  56. Influence of substrate nitridation on GaN and InN growth by plasma-assisted molecular-beam epitaxy
  57. Detection of Shallow Dislocations on 4H-SiC Substrate by Etching Method
  58. Molten KOH Etching with Na2O2Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates
  59. A simultaneous observation of dislocations in 4H-SiC epilayer and n+-substrate by using electron beam induced current
  60. Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na2O2 Additive
  61. Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na2O2 Etching
  62. Nitrogen isotopic effect in Ga15N epifilms grown by plasma-assisted molecular-beam epitaxy
  63. Investigation on buffer layer for InN growth by molecular beam epitaxy
  64. Periodic supply of indium as surfactant for N-polar InN growth by plasma-assisted molecular-beam epitaxy
  65. Surface effects on the luminescence degradation of hydride vapor-phase epitaxy-grown GaN induced by electron-beam irradiation
  66. Growth of colorless transparent GaN single crystals on prismatic GaN seeds using a Ga melt and Na vapor
  67. Growth and characterization of isotopic natGa15N by molecular-beam epitaxy
  68. Photoluminescence and x-ray diffraction measurements of InN epifilms grown with varying In∕N ratio by plasma-assisted molecular-beam epitaxy
  69. InN Growth by Plasma-Assisted Molecular Beam Epitaxy with Indium Monolayer Insertion
  70. Impact of electron beam irradiation on the cathodoluminescence intensity for ZnO and GaN
  71. Luminescence of GaN single crystals prepared by heating a Ga melt in Na–N2 atmosphere
  72. The influence of indium monolayer insertion on the InN epifilm grown by plasma-assisted molecular beam epitaxy
  73. Cathodoluminescence characterization of GaN quantum dots grown on 6H–SiC substrate by metal-organic chemical vapor deposition
  74. Effect of the oblique excitation and detection on the cathodoluminescence spectra
  75. Blue-Green Light Emission from a-SiC x :H-Based Fabry–Perot Microcavities
  76. GaN nanodot fabrication by implant source growth