All Stories

  1. Anisotropic mechanical properties of β-Ga2O3 single-crystal measured via angle-dependent nanoindentation using a Berkovich indenter

    Article • Journal of Applied Physics, December 2023, American Institute of Physics

    Dr. Yongzhao YAO, Yukari Ishikawa

  2. Size of dislocation patterns induced by Vickers indentation in hydride vapor-phase epitaxy GaN

    Article • Journal of Applied Physics, June 2022, American Institute of Physics

    Yukari Ishikawa

  3. Expansion of Basal Plane Dislocation in 4H-SiC Epitaxial Layer on A-Plane by Electron Beam Irradiation

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Masashi Kato, Dr. Yongzhao YAO, Yukari Ishikawa

  4. Dislocation Revelation and Categorization for Thick Free-Standing GaN Substrates Grown by HVPE

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Dr. Yongzhao YAO, Yukari Ishikawa

  5. Elementary Screw and Mixed-Type Dislocations in 4H-SiC Characterized by X-Ray Topography Taken with Six Equivalent 11-28 g-Vectors and a Comparison to Etch Pit Evaluation

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Dr Keiichi Hirano, Yumiko Takahashi, Dr. Yongzhao YAO, Yukari Ishikawa

  6. Dislocations in SiC Revealed by NaOH Vapor Etching and a Comparison with X-Ray Topography Taken with Various g-Vectors

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Dr Keiichi Hirano, Yumiko Takahashi, Dr. Yongzhao YAO, Yukari Ishikawa

  7. Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial Growth

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Dr. Yongzhao YAO, Yukari Ishikawa