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This page is a summary of: Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method, Materials Science Forum, April 2010, Trans Tech Publications,
DOI: 10.4028/www.scientific.net/msf.645-648.207.
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