All Stories

  1. Limiting factors to the performance and operation frequency range of THz quantum cascade laser based on GaAs/AlGaAs heterostructures
  2. Arsenides-and related III-V materials-based multilayered structures for terahertz applications: Various designs and growth technology
  3. Strained superlattices InGaAs/InAlAs with ultrashort photocarrier lifetime
  4. Sub-terahertz FET detector with self-assembled Sn-nanothreads
  5. The operation of THz quantum cascade laser in the region of negative differential resistance
  6. Balance-equation method for simulating terahertz quantum-cascade lasers using a wave-function basis with reduced dipole moments of tunnel-coupled states
  7. Spectra of mode loss in THz quantum cascade laser with double metal waveguide based on Au, Cu and Ag
  8. Plasmonic Photoconductive Antennas for Terahertz Pulsed Spectroscopy and Imaging Systems
  9. Enhanced terahertz emission from strain-induced InGaAs/InAlAs superlattices
  10. Plasmonic terahertz emitters with high-aspect ratio metal gratings
  11. Silver-based double metal waveguide for terahertz quantum cascade laser
  12. Terahertz Photoconductive Emitter With Dielectric-Embedded High-Aspect-Ratio Plasmonic Grating for Operation with Low-Power Optical Pumps
  13. Design and fabrication of terahertz quantum cascade laser with double metal waveguide based on multilayer GaAs/AlGaAs heterostructures
  14. VII and VIII International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2016 & Mokerov Readings 2017
  15. Shaping the spectrum of terahertz photoconductive antenna by frequency-dependent impedance modulation
  16. Terahertz photoconductive emitter with dielectric-embedded high-aspect-ratio plasmonic grating for operation with low-power optical pumps
  17. Effect of Epitaxial Stresses on the Time Dynamics of Photoexcited Charge Carriers in InGaAs−Based Superlattices
  18. The Role of Excitation Photons Energy in the Photoinduced Carrier Dynamics in InGaAs/InAlAs Superlattice Heterostructures
  19. Mode loss spectra in THz quantum-cascade lasers with gold- and silver-based double metal waveguides
  20. Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz
  21. Terahertz emission from InGaAs with increased indium content
  22. Analysis of Terahertz Radiation Spectra in Multilayer GaAs/AlGaAs Heterostructures
  23. Sn-nanothreads in GaAs matrix and their sub- and terahertz applications
  24. Ultrafast Dynamics of Photoexcited Charge Carriers in In0.53Ga0.47As/In0.52Al0.48As Superlattices under Femtosecond Laser Excitation
  25. Two-frequency radiation forming for sub-terahertz carriers generation in optical range
  26. Broadband THz pulsed spectroscopy with impedance-matched antennas
  27. The investigation of temperature degradation in THz quantum cascade lasers based on resonant-phonon design
  28. Numerical simulations and experimental study of terahertz photoconductive antennas based on GaAs and its ternary compounds
  29. Lateral terahertz hot-electron bolometer based on an array of Sn nanothreads in GaAs
  30. Two-frequency radiation forming on chirped FBG for tuning terahertz carriers generation
  31. Plasmonic terahertz antennas with high-aspect ratio metal gratings
  32. Terahertz quantum cascade lasers with silver- and gold-based waveguides
  33. 3 THz quantum-cascade laser with metallic waveguide based on resonant-phonon depopulation scheme
  34. Characterization of the THz quantum cascade laser using fast superconducting hot electron bolometer
  35. Temporal stability and absolute composition issues in molecular beam epitaxy of AlGaAs/GaAs THz QCL
  36. Development of Pulsed Solid-State Generators of Millimeter and Submillimeter Wavelengths Based on Multilayer GaAs/AlGaAs Heterostructures
  37. Epitaxial stresses in an InGaAs photoconductive layer for terahertz antennas
  38. MBE growth, structural and optical properties of multilayer heterostructures for quantum-cascade lasers
  39. Total Efficiency of the Optical-to-Terahertz Conversion in Photoconductive Antennas Based on LT-GaAs and In0.38Ga0.62As
  40. Electrical and thermal properties of photoconductive antennas based on In x Ga1 – x As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz rad...
  41. Epitaxial stresses in InGaAs photoconductive layer for THz antennas
  42. The influence of gate length on the electron injection of velocity in an AlGaN/AlN/GaN НЕМТ channel
  43. Methods of spectrally pure two-frequency radiation forming for terahertz carriers generation in optical range
  44. Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates
  45. Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation
  46. Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme
  47. The First Terahertz Quantum-Cascade Laser Fabricated in Russia
  48. Thermo injecting electrical instability in the AlxGa1-xAs/GaAs heterostructures with tunnel-nontransparent potential barriers
  49. Sn nanothreads in GaAs: experiment and simulation
  50. Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures
  51. Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si3N4 passivation
  52. Terahertz Quantum-Cascade Laser Based on the Resonant-Phonon Depopulation Scheme
  53. Intensive Terahertz Radiation from InXGa1-XAs due to Photo-Dember Effect
  54. Promising materials for an electronic component base used to create terahertz frequency range (0.5–5.0 THz) generators and detectors
  55. Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates
  56. Photoluminescence of heterostructures containing an In x Ga1–x As quantum well with a high in content at different excitation powers
  57. Investigation of the optical properties of GaAs with δ-Si doping grown by molecular-beam epitaxy at low temperatures
  58. Metamorphic nanoheterostructures for millimeter-wave electronics
  59. Pseudomorphic HEMT with Sn nanowires on a vicinal GaAs substrate
  60. Investigation and Fabrication of the Semiconductor Devices Based on Metamorphic InAlAs/InGaAs/InAlAs Nanoheterostructures for THz Applications
  61. MHEMT with a power-gain cut-off frequency of f max = 0.63 THz on the basis of a In0.42Al0.58As/In0.42Ga0.58As/In0.42Al0.58As/GaAs nanoheterostructure
  62. Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths
  63. Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts
  64. Electron effective masses in an InGaAs quantum well with InAs and GaAs inserts
  65. The built-in electric field in P-HEMT heterostructures with near-surface quantum wells Al x Ga 1−x As/In y Ga 1−y As/GaAs
  66. Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density
  67. PHEMT with different channel depth