Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si3N4 passivation

K. N. Tomosh, A. Yu. Pavlov, V. Yu. Pavlov, R. A. Khabibullin, S. S. Arutyunyan, P. P. Maltsev
  • Semiconductors, October 2016, Pleiades Publishing Ltd
  • DOI: 10.1134/s1063782616100225

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http://dx.doi.org/10.1134/s1063782616100225

The following have contributed to this page: Dr Rustam Khabibullin