Investigation and Fabrication of the Semiconductor Devices Based on Metamorphic InAlAs/InGaAs/InAlAs Nanoheterostructures for THz Applications

D. V. Lavrukhin, A. E. Yachmenev, R. R. Galiev, A. S. Bugaev, Y. V. Fedorov, R. A. Khabibullin, D. S. Ponomarev, P. P. Maltsev
  • International Journal of High Speed Electronics and Systems, March 2015, World Scientific Pub Co Pte Lt
  • DOI: 10.1142/s0129156415200013

The authors haven't finished explaining this publication. If you are the author, sign in to claim or explain your work.

Read Publication

http://dx.doi.org/10.1142/s0129156415200013

The following have contributed to this page: Dr Rustam Khabibullin