MHEMT with a power-gain cut-off frequency of f max = 0.63 THz on the basis of a In0.42Al0.58As/In0.42Ga0.58As/In0.42Al0.58As/GaAs nanoheterostructure

D. V. Lavrukhin, A. E. Yachmenev, R. R. Galiev, R. A. Khabibullin, D. S. Ponomarev, Yu. V. Fedorov, P. P. Maltsev
  • Semiconductors, January 2014, Pleiades Publishing Ltd
  • DOI: 10.1134/s1063782614010187

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The following have contributed to this page: Dr Rustam Khabibullin