Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density

R. A. Khabibullin, I. S. Vasil’evskii, G. B. Galiev, E. A. Klimov, D. S. Ponomarev, R. A. Lunin, V. A. Kulbachinskii
  • Semiconductors, October 2011, Pleiades Publishing Ltd
  • DOI: 10.1134/s1063782611100125

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http://dx.doi.org/10.1134/s1063782611100125

The following have contributed to this page: Dr Rustam Khabibullin