Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates

G. B. Galiev, A. N. Klochkov, I. S. Vasil’evskii, E. A. Klimov, S. S. Pushkarev, A. N. Vinichenko, R. A. Khabibullin, P. P. Maltsev
  • Semiconductors, June 2017, Pleiades Publishing Ltd
  • DOI: 10.1134/s1063782617060100

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http://dx.doi.org/10.1134/s1063782617060100

The following have contributed to this page: Dr Rustam Khabibullin