Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation

D. S. Ponomarev, R. A. Khabibullin, A. E. Yachmenev, P. P. Maltsev, M. M. Grekhov, I. E. Ilyakov, B. V. Shishkin, R. A. Akhmedzhanov
  • Semiconductors, April 2017, Pleiades Publishing Ltd
  • DOI: 10.1134/s1063782617040170

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http://dx.doi.org/10.1134/s1063782617040170

The following have contributed to this page: Dr Rustam Khabibullin