Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation

  • D. S. Ponomarev, R. A. Khabibullin, A. E. Yachmenev, P. P. Maltsev, M. M. Grekhov, I. E. Ilyakov, B. V. Shishkin, R. A. Akhmedzhanov
  • Semiconductors, April 2017, Pleiades Publishing Ltd
  • DOI: 10.1134/s1063782617040170

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http://dx.doi.org/10.1134/s1063782617040170

The following have contributed to this page: Dr Rustam Khabibullin

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