Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation

D. S. Ponomarev, R. A. Khabibullin, A. E. Yachmenev, P. P. Maltsev, M. M. Grekhov, I. E. Ilyakov, B. V. Shishkin, R. A. Akhmedzhanov
  • Semiconductors, April 2017, Pleiades Publishing Ltd
  • DOI: 10.1134/s1063782617040170

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The following have contributed to this page: Dr Rustam Khabibullin