All Stories

  1. Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization

    Article • Applied Physics Letters, February 2020, American Institute of Physics

    Mattias Borg

  2. Transition to the quantum hall regime in InAs nanowire cross-junctions

    Article • Semiconductor Science and Technology, February 2019, Institute of Physics Publishing

    Mattias Borg

  3. Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy

    Article • Nanotechnology, December 2018, Institute of Physics Publishing

    Mattias Borg

  4. Observation of Twin-free GaAs Nanowire Growth Using Template-Assisted Selective Epitaxy

    Article • Crystal Growth & Design, October 2017, American Chemical Society (ACS)

    Mattias Borg

  5. Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects

    Article • Nano Letters, March 2017, American Chemical Society (ACS)

    Mattias Borg

  6. High-Mobility GaSb Nanostructures Cointegrated with InAs on Si

    Article • ACS Nano, February 2017, American Chemical Society (ACS)

    Mattias Borg

  7. Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si

    Article • Applied Physics Letters, June 2015, American Institute of Physics

    Mattias Borg

  8. Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si

    Article • Journal of Applied Physics, April 2015, American Institute of Physics

    Mattias Borg

  9. Vertical III–V Nanowire Device Integration on Si(100)

    Article • Nano Letters, March 2014, American Chemical Society (ACS)

    Mattias Borg

  10. Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy

    Article • Journal of Crystal Growth, November 2013, Elsevier

    Mattias Borg

  11. GaSb nanowire pFETs for III-V CMOS

    Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Mattias Borg

  12. Frequency modulation in mm-wave InGaAs MOSFET/RTD wavelet generators

    Article • May 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson, Mattias Borg

  13. Synthesis and properties of antimonide nanowires

    Article • Nanotechnology, April 2013, Institute of Physics Publishing

    Mattias Borg

  14. Diameter Limitation in Growth of III-Sb-Containing Nanowire Heterostructures

    Article • ACS Nano, March 2013, American Chemical Society (ACS)

    Mattias Borg

  15. Diameter-Dependent Photocurrent in InAsSb Nanowire Infrared Photodetectors

    Article • Nano Letters, March 2013, American Chemical Society (ACS)

    Mattias Borg

  16. Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrays

    Article • Journal of Crystal Growth, March 2013, Elsevier

    Mattias Borg

  17. High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

    Article • IEEE Electron Device Letters, February 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Mattias Borg

  18. Single InAs/GaSb Nanowire Low-Power CMOS Inverter

    Article • Nano Letters, October 2012, American Chemical Society (ACS)

    Mattias Borg

  19. Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires

    Article • Applied Physics Letters, September 2012, American Institute of Physics

    Mattias Borg

  20. Thin InAs membranes and GaSb buffer layers on GaAs(001) substrates

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, September 2012, American Vacuum Society

    Mattias Borg

  21. Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices

    Article • Applied Physics Letters, July 2012, American Institute of Physics

    Mattias Borg

  22. $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ RTD–MOSFET Millimeter-Wave Wavelet Generator

    Article • IEEE Electron Device Letters, July 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson, Mattias Borg

  23. 1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors

    Article • IEEE Transactions on Electron Devices, July 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Mattias Borg

  24. Controlling the Abruptness of Axial Heterojunctions in III–V Nanowires: Beyond the Reservoir Effect

    Article • Nano Letters, June 2012, American Chemical Society (ACS)

    Mattias Borg

  25. High current density InAsSb/GaSb tunnel field effect transistors

    Article • June 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Mattias Borg

  26. High-Performance InAs Nanowire MOSFETs

    Article • IEEE Electron Device Letters, June 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Mattias Borg

  27. Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V

    Article • June 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Mattias Borg

  28. High-Frequency Performance of Self-Aligned Gate-Last Surface Channel $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFET

    Article • IEEE Electron Device Letters, March 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson, Mattias Borg

  29. GaSb nanowire single-hole transistor

    Article • Applied Physics Letters, December 2011, American Institute of Physics

    Mattias Borg

  30. High frequency vertical InAs nanowire MOSFETs integrated on Si substrates

    Article • physica status solidi c, December 2011, Wiley

    Mattias Borg

  31. Uniform and position-controlled InAs nanowires on 2′′Si substrates for transistor applications

    Article • Nanotechnology, December 2011, Institute of Physics Publishing

    Mattias Borg

  32. Interface composition of InAs nanowires with Al2O3 and HfO2 thin films

    Article • Applied Physics Letters, November 2011, American Institute of Physics

    Mattias Borg

  33. Highly controlled InAs nanowires on Si(111) wafers by MOVPE

    Article • physica status solidi c, November 2011, Wiley

    Mattias Borg

  34. Diameter reduction of nanowire tunnel heterojunctions using in situ annealing

    Article • Applied Physics Letters, November 2011, American Institute of Physics

    Mattias Borg

  35. High Current Density Esaki Tunnel Diodes Based on GaSb-InAsSb Heterostructure Nanowires

    Article • Nano Letters, October 2011, American Chemical Society (ACS)

    Mattias Borg

  36. Formation of the Axial Heterojunction in GaSb/InAs(Sb) Nanowires with High Crystal Quality

    Article • Crystal Growth & Design, October 2011, American Chemical Society (ACS)

    Mattias Borg

  37. RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates

    Article • IEEE Transactions on Microwave Theory and Techniques, October 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Mattias Borg

  38. Temperature and annealing effects on InAs nanowire MOSFETs

    Article • Microelectronic Engineering, July 2011, Elsevier

    Mattias Borg

  39. Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers

    Article • June 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson, Mattias Borg

  40. 15 nm diameter InAs nanowire MOSFETs

    Article • June 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Mattias Borg

  41. Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy

    Article • Applied Physics Letters, March 2011, American Institute of Physics

    Dr Joel Eymery, Mattias Borg

  42. InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors

    Article • Nano Letters, October 2010, American Chemical Society (ACS)

    Mattias Borg

  43. Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging

    Article • New Journal of Physics, March 2010, Institute of Physics Publishing

    Dr Vincent Favre-Nicolin, Dr Joel Eymery, Mattias Borg

  44. Vertical InAs Nanowire Wrap Gate Transistors withft> 7 GHz andfmax> 20 GHz

    Article • Nano Letters, March 2010, American Chemical Society (ACS)

    Mattias Borg

  45. InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch

    Article • Nanotechnology, November 2009, Institute of Physics Publishing

    Mattias Borg

  46. High‐Quality InAs/InSb Nanowire Heterostructures Grown by Metal–Organic Vapor‐Phase Epitaxy

    Article • Small, July 2008, Wiley

    Mattias Borg

  47. InAs film grown on Si(111) by metal organic vapor phase epitaxy

    Article • Journal of Physics Conference Series, March 2008, Institute of Physics Publishing

    Mattias Borg